ON BC846BLT3G General purpose transistor Datasheet

BC846ALT1G Series,
SBC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: >4000 V
•
•
•
ESD Rating − Machine Model: >400 V
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
VCEO
Collector−Base Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
VCBO
Emitter−Base Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
VEBO
Collector Current − Continuous
IC
Value
Vdc
2
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
SOT−23
CASE 318
STYLE 6
Vdc
80
50
30
MARKING DIAGRAM
Vdc
6.0
6.0
5.0
100
XX M G
G
mAdc
1
XX
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
1
65
45
30
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Characteristic
3
Unit
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 11
1
Publication Order Number:
BC846ALT1/D
BC846ALT1G Series, SBC846ALT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage BC846A, B, SBC846A, B
BC847A, B, C, BC850B, C, SBC847C
(IC = 10 mA)
BC848A, B, C, BC849B, C, SBC848B
V(BR)CEO
65
45
30
−
−
−
−
−
−
V
Collector −Emitter Breakdown Voltage BC846A, B
(IC = 10 mA, VEB = 0)
BC847A, B, C BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
V(BR)CES
80
50
30
−
−
−
−
−
−
V
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846A, B, SBC846A, B
BC847A, B, C, BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
V(BR)CBO
80
50
30
−
−
−
−
−
−
V
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846A, B, SBC846A, B
BC847A, B, C, BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
V(BR)EBO
6.0
6.0
5.0
−
−
−
−
−
−
V
ICBO
−
−
−
−
15
5.0
nA
mA
hFE
−
−
−
90
150
270
−
−
−
−
110
200
180
290
220
450
420
520
800
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A, SBC846A
(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B, SBC846B, SBC848B
BC847C, BC848C, SBC847C
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A, SBC846A, SBC846A
BC846B, BC847B, BC848B,
BC849B, BC850B, SBC846B, SBC848B
BC847C, BC848C, BC849C, BC850C, SBC847C
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
fT
100
−
−
MHz
Cobo
−
−
4.5
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
NF
BC846A,B, BC847A,B,C, BC848A,B,C,
SBC846A, B, SBC847C, SBC848B
BC849B,C, BC850B,C
http://onsemi.com
2
pF
dB
−
−
−
−
10
4.0
BC846ALT1G Series, SBC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
300
0.18
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
200
25°C
−55°C
100
0
0.001
0.01
0.08
0.06
−55°C
0.04
0.02
0.0001
0.001
0.01
0.1
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.10
IC, COLLECTOR CURRENT (A)
−55°C
IC/IB = 20
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.12
IC, COLLECTOR CURRENT (A)
1.0
0.9
150°C
0.14
0
1
0.1
IC/IB = 20
0.16
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
http://onsemi.com
3
0.1
BC846ALT1G Series, SBC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 6. Base−Emitter Temperature Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 5. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 7. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 8. Current−Gain − Bandwidth Product
http://onsemi.com
4
50
BC846ALT1G Series, SBC846ALT1G Series
BC846B, SBC846B
0.30
VCE = 1 V
150°C
500
400
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
25°C
300
−55°C
200
100
0
0.001
0.01
−55°C
0.05
0.0001
0.001
0.01
0.1
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.10
IC, COLLECTOR CURRENT (A)
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
25°C
0.15
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
0.20
0
1
0.1
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
http://onsemi.com
5
0.1
BC846ALT1G Series, SBC846ALT1G Series
2.0
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
BC846B, SBC846B
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
1.4
1.8
qVB for VBE
2.6
3.0
20
0.2
Figure 13. Collector Saturation Region
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
2.0
Cob
0.1
0.2
1.0 2.0
10 20
0.5
5.0
VR, REVERSE VOLTAGE (VOLTS)
50
0.5
10 20
50
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
100
200
Figure 14. Base−Emitter Temperature Coefficient
40
4.0
-55°C to 125°C
2.2
VCE = 5 V
TA = 25°C
500
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
100
Figure 15. Capacitance
Figure 16. Current−Gain − Bandwidth Product
http://onsemi.com
6
BC846ALT1G Series, SBC846ALT1G Series
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
0.30
VCE = 1 V
150°C
500
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
400
25°C
300
−55°C
200
100
0
0.001
0.01
−55°C
0.05
0.0001
0.001
0.01
0.1
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.10
IC, COLLECTOR CURRENT (A)
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
25°C
0.15
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
0.20
0
1
0.1
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
http://onsemi.com
7
0.1
BC846ALT1G Series, SBC846ALT1G Series
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 22. Base−Emitter Temperature
Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 21. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 23. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 24. Current−Gain − Bandwidth Product
http://onsemi.com
8
50
BC846ALT1G Series, SBC846ALT1G Series
BC847C, BC848C, BC849C, BC850C, SBC847C
900
hFE, DC CURRENT GAIN
0.30
150°C
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1000
800
700
25°C
600
500
400 −55°C
300
200
100
0
0.001
0.01
−55°C
0.05
0.0001
0.001
0.01
0.1
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.10
IC, COLLECTOR CURRENT (A)
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
25°C
0.15
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
0.20
0
1
0.1
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
http://onsemi.com
9
0.1
BC846ALT1G Series, SBC846ALT1G Series
BC847C, BC848C, BC849C, BC850C, SBC847C
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 30. Base−Emitter Temperature
Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 29. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 31. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 32. Current−Gain − Bandwidth Product
http://onsemi.com
10
50
BC846ALT1G Series, SBC846ALT1G Series
1
1S
0.1
IC, COLLECTOR CURRENT (A)
100 mS 10 mS
1 mS
Thermal Limit
0.01
0.001
1
10
100
100 mS 10 mS
1 mS
0.1
1S
Thermal Limit
0.01
0.001
0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 33. Safe Operating Area for
BC846A, BC846B
Figure 34. Safe Operating Area for
BC847A, BC847B, BC847C, BC850B, BC850C
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1
100 mS 10 mS
1S
0.1
Thermal Limit
0.01
0.001
1 mS
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 35. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C
http://onsemi.com
11
100
BC846ALT1G Series, SBC846ALT1G Series
ORDERING INFORMATION
Device
BC846ALT1G
SBC846ALT1G
BC846ALT3G
BC846BLT1G
SBC846BLT1G
BC846BLT3G
SBC846BLT3G
Marking
Package
Shipping†
1A
SOT−23
(Pb−Free)
3,000 / Tape & Reel
1A
SOT−23
(Pb−Free)
10,000 / Tape & Reel
1B
SOT−23
(Pb−Free)
3,000 / Tape & Reel
1B
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
1F
SOT−23
(Pb−Free)
3,000 / Tape & Reel
1F
SOT−23
(Pb−Free)
10,000 / Tape & Reel
1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
1G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
1J
SOT−23
(Pb−Free)
3,000 / Tape & Reel
1K
SOT−23
(Pb−Free)
3,000 / Tape & Reel
1K
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
BC847ALT1G
BC847ALT3G
BC847BLT1G
SBC847BLT1G
BC847BLT3G
BC847CLT1G
SBC847CLT1G
BC847CLT3G
BC848ALT1G
BC848BLT1G
SBC848BLT1G
BC848BLT3G
1E
BC848CLT1G
BC848CLT3G
1L
BC849BLT1G
BC849BLT3G
2B
BC849CLT1G
BC849CLT3G
BC850BLT1G
BC850CLT1G
2C
2F
SOT−23
(Pb−Free)
2G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com
12
BC846ALT1G Series, SBC846ALT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
13
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BC846ALT1/D
Similar pages