IXYS IXFP4N100PM Polar hiperfet power mosfet Datasheet

Advance Technical Information
IXFP4N100PM
PolarTM HiperFETTM
Power MOSFET
VDSS
ID25
RDS(on)
= 1000V
= 2.5A
Ω
≤ 3.3Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
OVERMOLDED
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1 MΩ
Maximum Ratings
VGSS
VGSM
Continuous
Transient
ID25
IDM
1000
1000
V
V
± 20
± 30
V
V
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
2.5
8.0
A
A
IA
EAS
TC = 25°C
TC = 25°C
4.0
200
A
mJ
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C
10
V/ns
PD
TC = 25°C
57
W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
2.5
g
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from Case for 10 s
Plastic Body for 10 s
Md
Mounting Torque
Weight
G
G = Gate
S = Source
z
z
z
z
z
BVDSS
VGS = 0V, ID = 250μA
1000
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
V
z
VGS = ±20V, VDS = 0V
±100 nA
z
IDSS
VDS = VDSS, VGS = 0V
10 μA
750 μA
RDS(on)
VGS = 10V, ID = 2A, Note 1
© 2010 IXYS CORPORATION, All Rights Reserved
3.3
Ω
High Power Density
Easy to Mount
Space Savings
Applications
V
TJ = 125°C
6.0
Plastic Overmolded Tab for Electrical
Isolation
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
Advantages
z
Characteristic Values
Min.
Typ.
Max.
D = Drain
Features
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
DS
z
z
z
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS100295(11/10)
IXFP4N100PM
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
1.8
VDS = 20V, ID = 2A, Note 1
Ciss
Coss
3.0
S
1456
pF
90
pF
16
pF
1.6
Ω
24
ns
36
ns
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A
RG = 5Ω (External)
Qg(on)
Qgs
ISOLATED TO-220 (IXFP...M)
37
ns
50
ns
26
nC
9
nC
12
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A
Qgd
2.2 °C/W
RthJC
1
2
3
Terminals: 1 - Gate
2 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
Characteristic Values
Min.
Typ.
Max.
4
A
Repetitive, Pulse Width Limited by TJM
16
A
IF = IS , VGS = 0V, Note 1
1.3
V
300
IF = 2A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
ns
0.34
μC
5.30
A
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFP4N100PM
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
4
8
VGS = 10V
8V
7V
3.5
6
ID - Amperes
3
ID - Amperes
VGS = 10V
8V
7
2.5
6V
2
1.5
7V
5
4
6V
3
2
1
5V
0.5
1
5V
0
0
0
1
2
3
4
5
6
7
8
9
10
11
0
12
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.
Junction Temperature
35
3.0
4
VGS = 10V
7V
3.6
VGS = 10V
2.6
R DS(on) - Normalized
3.2
ID - Amperes
2.8
6V
2.4
2
1.6
1.2
0.8
5V
I D = 4A
2.2
I D = 2A
1.8
1.4
1.0
0.6
0.4
0
0.2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-50
28
-25
0
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 2A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
3
VGS = 10V
2.4
TJ = 125ºC
2.5
2.0
2
ID - Amperes
R DS(on) - Normalized
2.2
1.8
1.6
1.4
1.5
1
1.2
TJ = 25ºC
0.5
1.0
0.8
0
0
1
2
3
4
5
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
6
7
8
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFP4N100PM
Fig. 8. Transconductance
5
4.5
4.5
4
4
3.5
3.5
TJ = 125ºC
25ºC
- 40ºC
3
g f s - Siemens
ID - Amperes
Fig. 7. Input Admittance
5
2.5
2
25ºC
3
125ºC
2.5
2
1.5
1.5
1
1
0.5
0.5
0
TJ = - 40ºC
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
7.0
0.5
1
1.5
2
VGS - Volts
2.5
3
3.5
4
4.5
5
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
12
16
VDS = 500V
14
I D = 2A
10
I G = 10mA
12
VGS - Volts
IS - Amperes
8
6
4
10
8
6
TJ = 125ºC
4
TJ = 25ºC
2
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1.1
5
10
VSD - Volts
15
20
25
30
35
40
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
10,000
10
Ciss
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
Coss
100
1
0.1
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_4N100P(45-744)11-22-10-A
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