ON MMBF0201NLT1 Power mosfet 300 mamps, 20 volts n−channel sot−23 Datasheet

MMBF0201NLT1
Preferred Device
Power MOSFET
300 mAmps, 20 Volts
N−Channel SOT−23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d
battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
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300 mAMPS − 20 VOLTS
RDS(on) = 1 W
N−Channel
3
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available
1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Pulsed Drain Current (tp ≤ 10 ms)
IDM
300
240
750
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
2
MARKING DIAGRAM
AND PIN ASSIGNMENT
mAdc
ID
ID
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
3
Drain
1
N1 M G
G
2
SOT−23
CASE 318
STYLE 21
1
Gate
2
Source
N1
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
MMBF0201NLT1
SOT−23
MMBF0201NLT1G
Shipping †
3000 Tape & Reel
SOT−23 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1
Publication Order Number:
MMBF0201NLT1/D
MMBF0201NLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
−
−
Vdc
−
−
−
−
1.0
10
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
mAdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
−
−
±100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
−
−
0.75
1.0
1.0
1.4
gFS
−
450
−
mMhos
pF
ON CHARACTERISTICS (Note 1)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
−
45
−
Output Capacitance
(VDS = 5.0 V)
Coss
−
25
−
Transfer Capacitance
(VDG = 5.0 V)
Crss
−
5.0
−
td(on)
−
2.5
−
tr
−
2.5
−
td(off)
−
15
−
tf
−
0.8
−
QT
−
1400
−
pC
A
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 W)
Fall Time
Gate Charge (See Figure 5)
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
−
−
0.3
Pulsed Current
ISM
−
−
0.75
Forward Voltage (Note 2)
VSD
−
0.85
−
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
V
MMBF0201NLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
1.0
0.8
0.6
0.4
125°C
0.2
0
−55 °C
25°C
0
1
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS = 5 V
0.8
VGS = 4 V
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
0.2
VGS = 3 V
0
6
0
ON−RESISTANCE (OHMS)
1.5
1.2
0.9
VGS = 4.5 V
0.6
VGS = 10 V
0.3
0
0
0.6
0.4
ID, DRAIN CURRENT (AMPS)
0.2
0.8
1
2.4
2.0
1.5
1.0
0.5
0
0
5
10
15
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
16
1.10
14
1.05
1.00
VDS = 16 V
ID = 300 mA
10
8
6
4
ID = 250 mA
0.95
0.90
0.85
0.80
0.75
0.70
2
0
0
20
Figure 4. On−Resistance versus
Gate−to−Source Voltage
VGS(th) , NORMALIZED
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus Drain Current
12
1.4
Figure 2. On−Region Characteristics
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
Figure 1. Transfer Characteristics
0.3
0.6
0.9
1.2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.65
160
450
2000
0.60
−25
3400
0
25
50
75
100
125
Qg, TOTAL GATE CHARGE (pC)
TEMPERATURE (°C)
Figure 5. Gate Charge
Figure 6. Threshold Voltage Variance
Over Temperature
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3
150
MMBF0201NLT1
TYPICAL ELECTRICAL CHARACTERISTICS
100
1.6
VGS = 10 V @ 300 mA
C, CAPACITANCE (pF)
80
1.4
1.2
VGS = 4.5 V @ 100 mA
1.0
60
Ciss
40
Coss
20
0.8
Crss
0.6
−50
−25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
125
0
150
0
5
10
15
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. On−Resistance versus
Junction Temperature
Figure 8. Capacitance
10
SOURCE CURRENT (AMPS)
RDS(on) , NORMALIZED (OHMS)
1.8
1.0
0.1
125°C
0.01
0.001
0
25°C
−55 °C
0.3
0.6
0.9
1.2
SOURCE−TO−DRAIN FORWARD VOLTAGE (VOLTS)
Figure 9. Source−to−Drain Forward Voltage
versus Continuous Current (IS)
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4
1.4
20
MMBF0201NLT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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MMBF0201NLT1/D
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