NTE NTE2354 Silicon npn transistor high voltage horizontal output for high definition crt Datasheet

NTE2354
Silicon NPN Transistor
High Voltage Horizontal Output for High Definition CRT
Applications:
D High–definition color display horizontal deflection output
Features:
D Fast speed: tf = 100ns Typ
D High breakdown voltage: VCBO = 1500V
D High reliability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Collector Current, icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Saturation Voltage
Collector–to–Emitter
Saturation Voltage
Base–to–Emitter
DC Current Gain
Storage Time
Fall Time
Symbol
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
hFE
tstg
tf
Test Conditions
VCE = 1500V, RBE = 0
IC = 100mA, IB = 0
VEB = 4V, IC = 0
IC = 8A, IB = 2.0A
Min Typ Max Unit
–
800
–
–
–
–
–
–
1.0
–
1.0
5.0
mA
V
mA
V
IC = 8A, IB = 2.0A
–
–
1.5
V
VCE = 5V, IC = 1.0A
IC = 6A, IB1 = 1.2A, IB2 = –2.4A
IC = 6A, IB1 = 1.2A, IB2 = –2.4A
8
–
–
–
–
0.1
–
3.0
0.2
–
µs
µs
.190 (4.82)
.615 (15.62)
C
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)
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