UTC MMBTA56 Amplifier transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBTA56
PNP SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
„
FEATURES
3
* Collector-Emitter Voltage: VCEO=-80V
* Collector Dissipation: PD=350mW
1
2
SOT-23
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMBTA56L-AE3-R
MMBTA56G-AE3-R
„
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 5
QW-R206-090,B
MMBTA56
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-4
V
Collector Current - Continuous
IC
-500
mA
350
mW
Total Device Dissipation(Note 1)
PD
2.8
mW/℃
Derate Above 25℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note 1. Device mounted on FR-4=1.6×1.6×0.06 in
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
„
SYMBOL
θJA
MAX
357
UNIT
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
SYMBOL
TEST CONDITIONS
BVCEO
IC=-1.0mA, IB=0
-80
BVEBO
ICES
ICBO
IE=-100μA, Ic=0
VCE=-60V, IB=0
VCB=-80V, IE=0
-4
hFE
IC=-10mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-100mA, IB=-10mA
IC=-100mA, VCE=-1V
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter on Voltage
VBE(ON)
SMALL-SIGNAL CHARACTERISTICS
IC=-10mA, VCE=-2V,
Current Gain Bandwidth Product
fT
(Note2)
f=100MHz
Note 1: Pulse test: PW≤300μs, Duty Cycle≤2%
2: fT is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
V
-0.1
-0.1
V
μA
μA
-0.25
-1.2
V
V
100
100
100
MHz
2 of 5
QW-R206-090,B
MMBTA56
„
PNP SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUITS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R206-090,B
MMBTA56
Capacitance, C (pF)
Current-Gain Bandwidth
Product, fT (MHz)
TYPICAL CHARACTERISTICS
100
70
50
ts
Active-Region Safe Operating Area
-1.0K
-700
-500
Collector Current, IC (mA)
Time, t (ns)
300
200
Switching Time
-300
-200
tf
VCC=-40V
30 IC/IB=10
tr
20 IB1=IB2
TJ=25℃ td@VBE(off)=-0.5V
10
-5.0-7.0 -10 -20 -30 -50-70-100-200-300-500
Collector Current, IC (mA)
1.0ms
TC=25℃
s
0µ
10
1.0K
700
500
1.0s
-100 TA=25℃
-70
-50
MMBTA55
-30
-20
MMBTA56
Current Limit
Thermal Limit
Second Breakdown Limit
-10
-1.0 -2.0-3.0-5.0 -7.0-10 -20-30 -50 -70-100
Collector-Emitter Voltage, VCE (V)
Voltage, V
DC Current Gain, hFE
„
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R206-090,B
MMBTA56
Temperature Coefficient, RθVB (mV/℃)
TYPICAL CHARACTERISTICS(Cont.)
Collector-Emitter Voltage, VCE (V)
„
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R206-090,B
Similar pages