ON MMUN21XXLT3G Bias resistor transistor Datasheet

MMUN2111LT1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
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PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
•
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel.
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
MARKING
DIAGRAM
3
1
SOT−23
CASE 318
STYLE 6
2
A6x M G
G
1
A6x
x
M
G
= Device Code
= A − L (Refer to page 2)
= Date Code*
= Pb−Free Package
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
(Note: Microdot may be in either location)
IC
100
mAdc
*Date Code orientation may vary depending
upon manufacturing location.
Symbol
Max
Unit
PD
246 (Note 1)
400 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
°C/W
ORDERING INFORMATION
Device
Package
Shipping †
MMUN21xxLT1
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
10000/Tape & Reel
Thermal Resistance,
Junction-to-Ambient
RqJA
508 (Note 1)
311 (Note 2)
°C/W
MMUN21xxLT1G
Thermal Resistance,
Junction-to-Lead
RqJL
174 (Note 1)
208 (Note 2)
°C/W
MMUN21xxLT3
TJ, Tstg
−55 to +150
°C
Junction and Storage,
Temperature Range
MMUN21xxLT3G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
SOT−23 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 5
1
Publication Order Number:
MMUN2111LT1/D
MMUN2111LT1 Series
DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1 (K)
R2 (K)
Shipping
MMUN2111LT1, G
MMUN2111LT3, G
Device*
SOT−23
A6A
10
10
3000/Tape & Reel
10,000/Tape & Reel
MMUN2112LT1, G
SOT−23
A6B
22
22
3000/Tape & Reel
MMUN2113LT1, G
MMUN2113LT3, G
SOT−23
A6C
47
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2114LT1, G
SOT−23
A6D
10
47
3000/Tape & Reel
MMUN2115LT1, G (Note 3)
SOT−23
A6E
10
∞
3000/Tape & Reel
MMUN2116LT1, G (Note 3)
SOT−23
A6F
4.7
∞
3000/Tape & Reel
MMUN2130LT1, G (Note 3)
SOT−23
A6G
1.0
1.0
3000/Tape & Reel
MMUN2131LT1, G (Note 3)
SOT−23
A6H
2.2
2.2
3000/Tape & Reel
MMUN2132LT1, G (Note 3)
SOT−23
A6J
4.7
4.7
3000/Tape & Reel
MMUN2133LT1, G (Note 3)
SOT−23
A6K
4.7
47
3000/Tape & Reel
MMUN2134LT1, G (Note 3)
SOT−23
A6L
22
47
3000/Tape & Reel
*The “G’’ suffix indicates Pb−Free package available.
3. New devices. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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2
MMUN2111LT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
kW
R1/R2
0.8
0.17
−
0.8
0.055
1.0
0.21
−
1.0
0.1
1.2
0.25
−
1.2
0.185
ON CHARACTERISTICS (Note 5)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
Collector-Emitter Saturation Voltage
(IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
MMUN2130LT1/MMUN2131LT1
(IC = 10 mA, IB = 1 mA)
MMUN2115LT1/MMUN2116LT1/
MMUN2132LT1/MMUN2133LT1/MMUN2134LT1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
VOL
MMUN2111LT1
MMUN2112LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
MMUN2113LT1
Vdc
Vdc
MMUN2115LT1
MMUN2116LT1
MMUN2131LT1
MMUN2132LT1
MMUN2130LT1
Input Resistor
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
Resistor Ratio
MMUN2111LT1/MMUN2112LT1/MMUN2113LT1
MMUN2114LT1
MMUN2115LT1/MMUN2116LT1
MMUN2130LT1/MMUN2131LT1/MMUN2132LT1
MMUN2133LT1
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
MMUN2111LT1 Series
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
RqJA = 625°C/W
50
0
−50
0
50
100
150
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
1
IC/IB=10
TA=−25°C
75°C
0.1
0.01
4
25°C
−25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
3
2
1
0
100
f = 1 MHz
lE = 0 V
TA = 25°C
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
75°C
100
25°C
VO = 0.2 V
TA=−25°C
10
1
0.1
0.01
50
Figure 4. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
IC , COLLECTOR CURRENT (mA)
80
Figure 2. VCE(sat) versus IC
TA=75°C
0.001
60
Figure 1. Derating Curve
VCE = 10 V
100
40
IC, COLLECTOR CURRENT (mA)
C ob , CAPACITANCE (pF)
h FE , DC CURRENT GAIN (NORMALIZED)
20
0
TA, AMBIENT TEMPERATURE (°C)
1000
10
25°C
TA=−25°C
10
25°C
75°C
1
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
0.1
10
Figure 5. Output Current versus Input Voltage
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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4
50
MMUN2111LT1 Series
1000
10
h FE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
IC/IB=10
TA=−25°C
25°C
1
75°C
0.1
0.01
0
20
40
60
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
100
10
80
1
10
Figure 8. DC Current Gain
100
IC , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
75°C
25°C
TA=−25°C
10
1
0.1
VO = 5 V
0.01
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
1
2
3
4
VO = 0.2 V
TA=−25°C
25°C
10
75°C
1
0
10
6
7
8
9
10
Figure 10. Output Current versus Input Voltage
100
0.1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
3
25°C
−25°C
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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5
MMUN2111LT1 Series
1
1000
IC/IB=10
TA=−25°C
25°C
75°C
0.1
0.01
h FE , CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2113LT1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
0.6
0.4
0.2
0
0
TA=75°C
−25°C
1
0.1
0.01
VO = 5 V
0
1
2
3
4
VO = 2 V
TA=−25°C
25°C
75°C
10
1
10
6
7
8
9
10
Figure 15. Output Current versus Input Voltage
100
0
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
0.1
25°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
I C , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
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6
MMUN2111LT1 Series
1
180
IC/IB=10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2114LT1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10 V
160
25°C
140
−25°C
120
100
80
60
40
20
0
80
1
2
4
6
Figure 17. VCE(sat) versus IC
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
3.5
3
IC, COLLECTOR CURRENT (mA)
C ob , CAPACITANCE (pF)
90 100
100
4
2.5
25°C
−25°C
10
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
VO = 5 V
1
50
Figure 19. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 20. Output Current versus Input Voltage
+12 V
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
80
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
TA=−25°C
25°C
75°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current Source
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7
MMUN2111LT1 Series
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−08
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
VIEW C
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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MMUN2111LT1/D
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