ASI MSC1300M Npn silicon rf power transistor Datasheet

MSC1300M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .400 2NL FLG
The ASI MSC1300M is a high power
Class C, common Base transistor,
Designed for IFF/DME/TACAN
Applications.
A
.0 2 5 x 4 5 °
ØD
C
E
F
FEATURES:
G
H
• Internal Input/Output Matching Networks
• PG = 6.3 dB at 300 W/1090 MHz
• Omnigold™ Metalization System
L
IC
20 A
VCC
55 V
P
625 W @ TC = 25 °C
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θJC
0.20 °C/W
CHARACTERISTICS
M A X IM U M
M IN IM U M
inches / m m
inches / m m
A
.0 2 0 / 0 .5 1
.0 3 0 / 0 .7 6
B
.1 0 0 / 2 .5 4
C
.3 7 6 / 9 .5 5
D
.1 1 0 / 2 .7 9
.1 3 0 / 3 .3 0
E
.3 9 5 / 1 0 .0 3
.4 0 7 / 1 0 .3 4
.3 9 6 / 1 0 .0 6
F
.1 9 3 / 4 .9 0
G
.4 5 0 / 1 1 .4 3
.1 2 5 / 3 .1 8
I
.6 4 0 / 1 6 .2 6
J
.8 9 0 / 2 2 .6 1
.6 6 0 / 1 6 .7 6
.9 1 0 / 2 3 .1 1
K
.3 9 5 / 1 0 .0 3
.4 1 5 / 1 0 .5 4
L
.0 0 4 / 0 .1 0
.0 0 7 / 0 .1 8
M
.0 5 2 / 1 .3 2
.0 7 2 / 1 .8 3
N
.1 1 8 / 3 .0 0
.1 3 1 / 3 .3 3
.2 3 0 / 5 .8 4
P
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
N
D IM
H
TJ
I
J
K
M
MAXIMUM RATINGS
PDISS
4 x .0 6 2 x 4 5 °
2X B
BVCEO
IC = 10 mA
BVCER
IC = 25 mA
BVEBO
IE = 1.0 mA
ICES
VCE = 50 V
hFE
VCE = 5.0 V
IC = 1.0 A
GP
ηC
VCC = 50 V
POUT = 300 W
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
v
65
V
3.5
V
15
f = 1090 MHz
UNITS
65
6.3
35
6.7
42
25
mA
120
--dB
%
Pulse Width = 10 µsec, Duty Cycle 10 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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