PHILIPS BAS4 Low-leakage diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BAS45AL
Low-leakage diode
Product specification
Supersedes data of 1999 May 04
1999 May 28
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
FEATURES
DESCRIPTION
• Continuous reverse voltage:
max. 125 V
Epitaxial medium-speed switching diode with a low leakage current in a small
SOD80C glass SMD package.
• Repetitive peak forward current:
max. 625 mA
• Low reverse current: max. 1 nA
• Switching time: typ. 1.5 µs.
k
handbook, 4 columns
a
MAM061
APPLICATION
• Low leakage current applications.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
−
125
V
−
125
V
−
250
mA
−
625
mA
tp = 1 µs
−
4
A
tp = 1 ms
−
1
A
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
note 1; see Fig.2
−
0.5
A
−
400
mW
storage temperature
−65
+175
°C
junction temperature
−
175
°C
tp = 1 s
Ptot
total power dissipation
Tstg
Tj
Tamb = 25 °C; note 1
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 28
MIN.
2
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
CONDITIONS
TYP.
MAX.
UNIT
see Fig.3
reverse current
IF = 1 mA
−
780
mV
IF = 10 mA
−
860
mV
IF = 100 mA
−
1000
mV
VR = 125 V; Emax = 100 lx
−
1
nA
VR = 30 V; Tj = 125 °C; Emax = 100 lx
−
300
nA
VR = 125 V; Tj = 125 °C; Emax = 100 lx
−
500
nA
VR = 125 V; Tj = 150 °C; Emax = 100 lx
−
2
µA
see Fig.5
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
4
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
1.5
−
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 28
3
VALUE
UNIT
300
K/W
375
K/W
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
GRAPHICAL DATA
MBG522
300
MBG523
300
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
200
100
100
(2)
(3)
0
0
0
100
Tamb (oC)
0
200
1.0
VF (V)
1.5
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on a FR4 printed-circuit board.
Fig.2
0.5
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage; typical values.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 28
4
104
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
MBD456
4
10halfpage
handbook,
IR
(nA)
3
MBG524
3
handbook, halfpage
Cd
(pF)
10
2
max
10 2
typ
10
1
1
10 1
0
0
50
100
T j ( oC)
150
0
5
VR = 125 V.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
handbook, full pagewidth
tr
10
15
VR (V)
20
Diode capacitance as a function of reverse
voltage; typical values.
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R = 50 Ω
i
MGA881
(1)
90%
VR
input signal
Fig.7 Reverse recovery time test circuit and waveforms.
1999 May 28
t rr
5
output signal
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package; 2 connectors
k
SOD80C
a
(1)
D
L
L
H
DIMENSIONS (mm are the original dimensions)
0
UNIT
D
H
L
mm
1.60
1.45
3.7
3.3
0.3
1
2 mm
scale
Note
1. The marking band indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
SOD80C
100H01
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-20
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 28
6
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
NOTES
1999 May 28
7
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115002/04/pp8
Date of release: 1999 May 28
Document order number:
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