Infineon BBY53-02W Silicon tuning diode Datasheet

BBY53...
Silicon Tuning Diode
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• High ratio at low reverse voltage
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53-03L
BBY53
BBY53-05W
3
1
3
2
1
Type
BBY53
BBY53-02L*
BBY53-02V
BBY53-02W
BBY53-03L*
BBY53-03W
BBY53-05W
D 2
D 1
2
1
Package
SOT23
TSLP-2-1
SC79
SCD80
TSLP-3-1
SOD323
SOT323
2
Configuration
common cathode
single, leadless
single
single
single, leadless
single
common cathode
LS(nH)
2
0.4
0.6
0.6
0.4
1.8
1.4
Marking
S7s
LL
L
LL
LL
white/5
S7s
* Preliminary
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
6
Forward current
IF
20
mA
Operating temperature range
Top
-55 ... 125
°C
Storage temperature
Tstg
-55 ... 150
1
Value
Unit
V
Oct-13-2003
BBY53...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Reverse current
IR
nA
VR = 4 V
-
-
10
VR = 4 V, T A = 85 °C
-
-
200
AC Characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
4.8
5.3
5.8
VR = 3 V, f = 1 MHz
1.85
2.4
3.1
1.8
2.2
2.6
-
0.47
-
Capacitance ratio
CT1/CT3
VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance
rS
Ω
VR = 1 V, f = 1 GHz
2
Oct-13-2003
BBY53...
Diode capacitance CT = ƒ (VR)
Capacitance change ∆C = ƒ(TA)
f = 1MHz
f = 1 MHz
5.25
8.4
8
7.6
7.2
6.8
6.4
6
5.6
5.2
4.8
4.4
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
%
3V
3.75
1V
3
∆C T
CT
pF9
2.25
1.5
0.75
0
-0.75
-1.5
-2.25
-3
0.4 0.8 1.2 1.6
2
2.4 2.8 3.2 V
-3.75
-40
4
VR
-20
0
20
40
60
°C
100
TA
Temperature coefficient of the diode
capacitance TCC = ƒ (VR )
f = 1 MHz
10 -2
TCC
1/°C
10 -3
10 -4
0
0.5
1
1.5
2
2.5
3
V
4
VR
3
Oct-13-2003
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