Weitron MMBZ5V6A Small signal zener diodes 300m watts 3-26 volt Datasheet

MMBZ5V6A Series
Dual Common Anode Zener TVS
Features:
*Allows Either Two Separate Unidirectional Configuations or a Single
Bidirectional Configuations.
*Low Leakage Current.
*24-40 Watts Peak Power Protection.
*Excellent Clamping Capability.
*ESD Rating of Class N(exceeding 16KV)per the Human Body Model.
*Transient Voltage Suppressors Encapsulated in a SOT-23 Package.
SMALL SIGNAL
ZENER DIODES
300m WATTS
3-26 VOLTS
3
1
2
Mechanical Data:
*Case: Molded Epoxy
*Marking: Marking Code
*Maximum Case Temperature for Soldering Purpose: 260 C for 10 sec.
*Weight: 0.008grams(approx.)
SOT-23
SOT-23 Outline Dimensions
Unit:mm
A
B
TOP VIEW
E
G
C
D
H
K
J
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L
M
Dim Min Max
A
0.35 0.51
B
1.19 1.40
C
2.10 3.00
D
0.85 1.05
E
0.46 1.00
G
1.70 2.10
H
2.70 3.10
J
0.01 0.13
K
0.89 1.10
L
0.30 0.61
M 0.076 0.25
MMBZ5V6A Series
Maximum Ratings (TA =25 C Unless otherwise Noted)
Characteristics
Symbol
_ 25 C (1)
Peak Power Dissipation @ 1.0 ms @ TL <
MMBZ5V6A thru MMBZ10VA
MMBZ12VA thru MMBZ33VA
P PK
Total Power Dissipation on FR-5 Board (2) @ TA =25 C
Derate above 25 C
Thermal Resistance Junction-to-Ambient
PD
Value
W
24
40
mW
mW/ C
C/W
mW
mW/ C
C/W
Derate above 25 C
Thermal Resistance Junction-to-Ambient
R θJA
225
1.8
556
300
2.4
417
Junction and Storage Temperature Range
TJ ,TSTG
-55 to +150
C
260
C
Total Power Dissipation on Alumina Substrate (3)@ TA
R θJA
PD
=25 C
Lead Solder Temperature-Maximum(10 Second Duration)
TL
_
_
_
_
NOTE: 1. Non-Repetitive Current Pulse, per FIG 5 and Derated above TA =25 C per FIG 6.
2. FR-5=1.0 _ 0.75 _ 0.62 in.
3. Alumina=0.4 _ 0.3 _ 0.024m, 99.5% alumina
Electrical Characteristics
(TA =25 C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
I PP
VC
VRWM
IR
θ VBR
IT
VBR
I
IF
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
VC VBR VR WM
V
IR V F
IT
Working Peak Reverse Votlage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ I T
Test Current
IP P
Maximum Temperature Coef ficient of VBR
IF
Forward Current
VF
Forward Voltage @ I F
ZZT
Maximum Zener Impedance @ I ZT
I ZK
Reverse Current
ZZK
Maximum Zener Impedance @ I ZK
Uni-Directional TVS
Device Marking
Item
Marking
MMBZ5V6A
Series
XX=Specific Device Code
(See Table on Page 3)
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Eqivalent Circuit diagram
3
1
2
MMBZ5V6A Series
ELECTRICALCHARACTERISTICS (TA = 25 C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V F = 0.9 V Max @ IF = 10 mA)
24 WATTS
@ IT
ZZT
@ I ZT
VRWM
Device
Device
Marking
IR @
VRWM
Volts
uA
Min
Nom
Max
mA
MMBZ5V6A
5A6
3.0
5.0
5.32
5.6
5.88
MMBZ6V2A
6A2
3.0
0.5
5.89
6.2
MMBZ6V8A
6A8
4.5
0.5
6.46
6.8
MMBZ9V1A
9A1
6.0
0.3
8.65
MMB Z10V A
10A
6.5
0.3
9.50
(6)
ZZK @ I ZK
VC
IPP
Ω
Ω
mA
V
A
θVBR
mV/ C
20
11
1600
0.25
8.0
3.0
1.26
6.51
1.0
-
-
-
8.7
2.76
2.80
7.14
1.0
-
-
-
9.6
2.5
3.4
9.1
9.56
1.0
-
-
-
14
1.7
7.5
10
10.5
1.0
-
-
-
14.2
1.7
7.5
VBR (4) (V)
(V F = 0.9 V Max @ IF = 10 mA)
VC @ I P P
Max Zener
Impedance (5)
Breakdown Voltage
40 WATTS
VC @ I PP(6)
Breakdown Voltage
VRWM
IR @
VRWM
Volts
nA
Min
Nom
@ IT
VC
IPP
θVBR
Max
mA
V
A
mV/ C
VBR (4) (V)
Device
Device
Marking
MMBZ12VA
12A
8.5
200
11.40
12
12.60
1.0
17
2.35
7.5
MMBZ15VA
15A
12
50
14.25
15
15.75
1.0
21
1.9
12.3
MMBZ18VA
18A
14.5
50
17.10
18
18.90
1.0
25
1.6
15.3
MMBZ20VA
20A
17
50
19.00
20
21.00
1.0
28
1.4
17.2
MMBZ27VA
27A
22
50
25.65
27
28.35
1.0
40
1.0
24.3
MMBZ33VA
33A
26
50
31.35
33
34.65
1.0
46
0.87
30.4
4. V B R measured at pulse test current I T at an ambient temperature of 25 C .
5. Z ZT and Z ZK are measured by dividing the AC voltage drop across the device by the AC current applied. T he specified limits are for I Z(AC )
= 0.1 I Z(DC ) , with the AC frequency = 1.0 kHz.
6. S urge current waveform per F ig 5 and derate per F ig 6
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WE IT R ON
MMBZ5V6A Series
1000
15
100
12
10
I R (nA)
VBR @ IT
BREAKDOWN VOLTAGE(V)
18
9
1
6
0.1
3
0
-40
0
+100
+50
0.01
-40
+150
+85
+25
TEMPERATURE( C)
+125
TEMPERATURE( C)
FIG.1 Typical Breakdown Voltage
Versus Temperature
FIG.2 Typical Leakage Current
Versus Temperature
(Upper curve for each voltage is bidirectional mode,)
lower curve is undirectional mode)
320
PD , POWER DISSIPATION(mW)
300
C, CPACITANCE( P F)
280
240
200
5.6 V
160
120
15 V
80
40
0
0
ALUMINA SUBSTRATE
200
150
100
3
2
1
250
FR-5 BOARD
50
0
0
25
50
BIAS(V)
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I PP .
VALUE(%)
PEAK VALUE - I PP
HALF VALUE =
I PP
2
50
tP
0
0
1
2
125
150
3
4
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
t, TIME(ms)
Ta , AMBIENT TEMPERATURE( C)
FIG.5 Pulse Waveform
FIG.6 Pulse Derating Curve
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175
FIG.4 Steady State Power Derating Curve
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ Ta =25 C
(Upper curve for each voltage is bidirectional mode,)
lower curve is undirectional mode)
100
100
TEMPERATURE( C)
FIG.3 Typical Capacitance Versus Bias Voltage
_10us
tr <
75
175
200
WE IT R ON
MMBZ5V6A Series
PPK , PEAK SURGE POWER(W)
RECTANGULAR
WAVEFORM, TA = 25 C
BIDIRECTIONAL
10
1
UNIDIRECTIONAL
0.1
1
10
100
1000
PW, PULSE WIDTH(ms)
FIG.7 Maximum Non-repetitive Surge
Power, PPK Versus PW
Power is defined as VRSM x IZ(pk)where VRSM is
the clamping voltage at IZ (pk).
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PPK , PEAK SURGE POWER(W)
100
100
R E C TANGULAR
WAVEFORM, TA = 25 C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1
0.1
1
10
100
1000
PW, PULSE WIDTH(ms)
FIG.8 Maximum Non-repetitive Surge
Power, PPK (NOM)Versus PW
Power is defined as VZ (NOM) x I Z(pk)where VZ (NOM) is
the nominal Zener voltage measured at the low test current
used for voltage classification
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