Diodes DRDC3105E6-7 Integrated relay, inductive load driver Datasheet

A Product Line of
Diodes Incorporated
DRDC3105
INTEGRATED RELAY, INDUCTIVE LOAD DRIVER
Description and Applications
Features and Benefits
The DRDC3105 is an integrated solid-state DC relay driver that can
switch inductive loads. It provides a robust driver interface by acting as
a buffer stage between sensitive logic circuits and that of 3 to 6V DC
inductive relay coils. With a low input drive current requirement, the
DRDC3105 only has slight loading on the input circuitry and it will
provide good transient isolation between output and input channels.
The output switch is guaranteed by design to go open-circuit and fall
into the off-state condition when input drive is lost or disconnected.
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In the industry standard SOT23 and SOT26, the DRDC3105 comes as
a single or dual die which can replace three to six individual discrete
components within a single integrated package, including a Zener
across the output. The Zener will clamp at 6.6V to sink inductive
currents to ground which will reduce EMI noise in the system. By
integrating the Zener, the DRDC3105 eliminates the need for an
external free-wheeling diode and allows the driving of inductive loads
such as relays, solenoids, incandescent lamps, and small DC motors in:
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Automotive: 5.0 V Driven Relays, Lamp Drivers, Motor Controls
Telecom equipment: Modems, DSL, Cable (EMTA), Line Cards,
IP-PBX, Analog Terminal Adaptors, End User Telecom Equipment
Desktop Computers, Printers, Photocopiers
LCD & Plasma TVs, Set Top Boxes
Consumer Appliances, White Goods, Automated Door Control
Industrial equipment inc. Process Control, ATE equipment
Solar inverters
SOT23
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Inductive load driver capable of driving 3 to 6V DC coils
Optimized to switch inductive loads from supply of 3 to 5V with
the capability to drive coils up to 2.5W from a 5V rail
Fully integrated into a single SOT23 or dual SOT26 package to
minimize footprint area and reduce number of components
Includes Zener across output to reduce EMI noise
Internal low saturation BJT to reduce power dissipation in driving
high currents into the coil
Output guaranteed to be in off-state condition during no input
Near – Zero quiescent supply current in off-state condition with
minimal leakage
Rugged design and inherently robust by using solid-state BJT
technology integrated into a single die
ESD Protected up to 1kV on Human Body Model (HBM)
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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Case: SOT23 & SOT26
Case material: “Green” plastic molding compound (Note 2)
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: SOT23 = 0.008 grams (Approximate)
SOT26 = 0.018 grams (Approximate)
SOT26
SOT23
SOT26
GND
ESD PROTECTED
HBM TO 1kV
IN
OUT2
GND2
Top View
Pin-Out
Top View
Pin-Out
Top View
IN1
IN2
OUT
Top View
OUT1
GND1
Ordering Information (Note 3)
Product
DRDC3105F-7
DRDC3105E6-7
Notes:
Package
SOT23
SOT26
Marking
1R6
3105
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
3,000
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
1R6
DRDC3105
Document number: DS35213 Rev. 3 - 2
3105
1R6 = SOT23, Product type Marking Code
3105 = SOT26, Product type Marking Code
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DRDC3105
Internal Device Schematic
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Supply Voltage
Input Voltage (Forward)
Input Voltage (Reverse)
Output Sink Continuous Current
(Note 4)
Repetitive Pulse Zener Energy Limit (Duty Cycle 0.01%)
Symbol
VCC
Vin(fwd)
Vin(rev)
Io
Ezpk
Limit
6.0
6.0
-0.5
500
50
Unit
V
V
V
mA
mJ
Thermal Characteristics for DRDC3105F (SOT23) @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Notes:
Symbol
(Note 4)
PD
(Note 4)
(Note 5)
RθJA
RθJC
TJ, TSTG
Value
330
2.64
379
306
-55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
4. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air condition; the device is
measured when operating in a steady-state condition.
5. Thermal resistance from junction to case.
Thermal Characteristics for DRDC3105E6 (SOT26) @ TA = 25°C unless otherwise specified
Characteristic
Symbol
(Note 6 & 9)
Power Dissipation
Linear Derating Factor
(Note 6 & 10)
PD
(Note 7 & 9)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Notes:
(Note 6 & 9)
(Note 6 & 10)
(Note 7 & 9)
RθJA
RθJL
TJ, TSTG
Value
0.9
7.2
1.1
8.8
1.7
13.6
139
113
73
100
-55 to +150
Unit
W
mW/°C
°C/W
°C/W
°C
6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
7. For a device surface mounted on FR4 PCB measured at < 5sec
8. Repetitive rating – pulse width limited by maximum junction temperature. Refer to transient thermal impedance graph
9. For a device with one active die
10. For a device with two die running at equal power
11. Thermal resistance from junction to solder-point (at the end of the “OUT” lead).
DRDC3105
Document number: DS35213 Rev. 3 - 2
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DRDC3105
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Output Zener Breakdown Voltage
Output Leakage Current @ 0 Input Voltage
“ON” state input voltage (Note 12)
“OFF” State Input Voltage (Note 13)
ON CHARACTERISTICS
Input Bias Current (HFE Limited)
Output Saturation Voltage
Output Sink Current – Continuous
SWITCHING CHARACTERISTICS (Refer to Figure 1)
Propagation Delay Times:
High to Low Propagation Delay; (5.0V 74HC04)
Low to High Propagation Delay; (5.0V 74HC04)
High to Low Propagation Delay; 13 (3.0V 74HC04)
Low to High Propagation Delay; 13 (3.0V 74HC04)
High to Low Propagation Delay; 14 (5.0V 74LS04)
Low to High Propagation Delay; 14 (5.0V 74LS04)
Transition Times:
Fall Time; (5.0V 74HC04)
Rise Time; (5.0V 74HC04)
Fall Time; 13 (3.0V 74HC04)
Rise Time; 13 (3.0V 74HC04)
Fall Time; 14 (5.0V 74LS04)
Rise Time; 14 (5.0V 74LS04)
Notes:
Symbol
Min
Typ
Max
Unit
BV(out)
BV(−out)
6.2
-
6.6
0.67
7.0
-
V
IOO
-
Vin(on)
Vin(off)
400
0.99
540
0.1
30
1.5
-
V
mV
VO = 5.5 V, TA = 25°C
VO = 5.5 V, TA = 85°C
IO =100 mA, VO = 150mV
IO =100 µA, VO = 4.9V
Iin
VO(sat)
IO(on)
250
0.7
125
430
1.6
160
-
mA
mV
mA
IO = 250 mA, VO = 0.25 V
IO = 250 mA, Iin = 1.5 mA
VCE = 0.25 V, Iin = 1.5 mA
-
20.4
1.43
-
ns
µs
-
-
32.2
760
-
ns
ns
-
-
25.3
2.57
-
ns
µs
-
-
12.5
411
-
ns
ns
-
-
21.1
220
-
ns
ns
-
-
15.1
849
-
ns
ns
-
tPHL
tPLH
tPHL
tPLH
tPHL
tPLH
tf
tr
tf
tr
tf
tr
µA
Test Condition
@ IT = 10 mA Pulse
12. The device is guaranteed to be in “ON” state with Vin(on) above 1.5V
13. The device is guaranteed to be in “OFF” state with Vin(off) below 400mV
DRDC3105
Document number: DS35213 Rev. 3 - 2
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DRDC3105
Typical Electrical Characteristics
HFE, TRANSISTOR DC CURRENT GAIN
500
5
MC74HC04
@ 4.5 Vdc
T J = 85°C
400
INPUT VOLTAGE (V)
25°C
300
-40°C
200
100
--------VO = 1.0V
_____VO = 3.5V
0.25V
0
1
4
MC68HC05C8
@ 5.0 Vdc
3
MC74HC04
@ 3.0 Vdc
2
MC14049B @ 4.5 Vdc
MC68HC05C8 @ 3.3 Vdc
1
MC54LS04
+ BAL99LT1
0
0
10
100
IO, OUTPUT SINK CURRENT (mA)
DRDC3105
VIN vs. Iin
T J = 25°C
VO = 0.25V
1
2
3
INPUT CURRENT (mA)
4
Figure 3. Input V-I Requirement Compared
to Possible Source Logic Outputs
Figure 2. Transistor DC Current Gain
Iout, OUTPUT CURRENT (mA)
T J = 85°C
25°C
-40°C
0.02
0.04
0.06
0.08
INPUT CURRENT (mA)
Vout, OUTPUT VOLTAGE (Vdc)
1.0mA
0.8mA
300
0.6mA
200
0.4mA
100
0
0.0
0.2mA
0.1mA
0.5
1.0 1.5 2.0 2.5 3.0 3.5
VO, OUTPUT VOLTAGE (Vdc)
4.0
10
____
1.0
T J = 25°C
----T J = -40°C
0.8
0.6
0.4
500mA
0.2
-0.2
1.2mA
Figure 5. Transistor Output V-I Characteristic
1.2
0.0
1.4mA
400
0.10
Figure 4. Threshold Effects
Iin = 1.6mA
500
Iout = 10mA
350mA
175mA
125mA
50mA
0.1
1
Iin, INPUT CURRENT (mA)
10
VZ, ZENER CLAMP VOLTAGE (V)
OUTPUT CURRENT (mA)
600
45
40
35
30
25
20
15
10
5
0
0.00
9
8
T J = 85°C
7
25°C
-40°C
61
Figure 6. Output Saturation Voltage versus
Iout/Iin
DRDC3105
Document number: DS35213 Rev. 3 - 2
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10
100
IZ, ZENER CURRENT (mA)
Figure 7. Zener Clamp Voltage
versus Zener Current
December 2011
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A Product Line of
Diodes Incorporated
DRDC3105
100,000
VCC = 5.5 Vdc
1M
10,000
Vin = 0.5Vdc
100k
Vin = 0.35Vdc
10k
1k
100
Vin = 0Vdc
10
1
-40
OUTPUT LEAKAGE CURRENT (nA)
OUTPUT LEAKAGE CURRENT (nA)
10M
-20
0
20
40
60
TJ, JUNCTION TEMPERATURE (°C)
80
Vin = 0.5Vdc
1,000
100
Vin = 0.35Vdc
10
1
Vin = 0Vdc
0.1
0.01
0
1
T J = 25°C
2
3
4
5
6
VCC, SUPPLY CURRENT (Vdc)
7
Figure 9. Output Leakage Current
versus Supply Voltage
Figure 8. Output Leakage Current
versus Temperature
1
Iout(max) = 500mA
ºPW = 4ms
DC = 10%
*21 MS
RCE(SAT)
*26 MS
ºPW = 10ms
DC = 20%
OUTPUT CURRENT (A)
ºPW = 100ms
DC = 50%
*57 MS
ºCONTINUOUS DUTY
0.1
*154 MS
*250 MS
T A = 25°C
º = TRANSISTOR PC THERMAL LIMIT
* = MAX L/R FROM ZENER PULSED ENERGY LIMIT
(REFER TO FIGURE 11)
VCC(max) = +6.0 Vdc
0.01
0.1
1
Vout (VOLTS)
TYPICAL
IZ vs VZ
10
Figure 10. Safe Operating Area
DRDC3105
Document number: DS35213 Rev. 3 - 2
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DRDC3105
100k
T A = 25°C
Emax = 50mJ
L/R = 2 * Emax ÷ (Vzpk * Izpk)
MAX L/R TIME CONSTANT (ms)
10k
1k
100
10
1E-3
0.01
Izpk (A)
0.1
1
Rth, Transient Thermal Response
Figure 11. Zener Repetitive Pulse Energy Limit on L/R Time Constant
D = 0.5
100
0.2
0.1
0.05
10
SINGLE PULSE
1
1E-4
1E-3
0.01
0.1
1
10
PULSE WIDTH (s)
100
1000
10000
Figure 12. Transient Thermal Response
DRDC3105
Document number: DS35213 Rev. 3 - 2
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DRDC3105
Package Outline Dimensions for SOT23
A
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
K1
D
F
J
L
G
Suggested Pad Layout for SOT23
Y
Z
C
X
DRDC3105
Document number: DS35213 Rev. 3 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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DRDC3105
Package Outline Dimensions SOT26
A
B C
H
K
M
J
D
L
SOT26
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
⎯
⎯ 0.95
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
0°
8°
α
⎯
All Dimensions in mm
Suggested Pad Layout for SOT26
C2
Z
C2
Dimensions Value (in mm)
Z
3.20
G
1.60
X
0.55
Y
0.80
C1
2.40
C2
0.95
C1
G
Y
X
DRDC3105
Document number: DS35213 Rev. 3 - 2
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DRDC3105
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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Copyright © 2011, Diodes Incorporated
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DRDC3105
Document number: DS35213 Rev. 3 - 2
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