HY HYESD2045FN2 Sigle channel low capacitance esd protection diode array Datasheet

SINGLE PHASE
HALF WAVECURVE
1 =–50
FORWARD
RS1A-RS1G
RS1J-SR1M
CURRENT
25°C
f4=
1 MHz
TEMPERATURE
(℃)
1FIG.
25TJAMBIENT
75
10
100 20DERATING
125
15060Hz
100
175
FIG.
–2MAXIMUM
10 2SINGLE
5NON10
0.0
0.2
0.4 0.6
0.8
HYESD2045FN2
Single Channel Low Capacitance ESD Protection Diode Array
HYESD2045FN2 is a single-channel ultra low capacitance rail clamp ESD protection diode array which
includes surge rated to protect high speed data lines. Each channel consists of a pair of ESD diodes that
steer positive or negative ESD current to either the positive or negative rail. Typical application, the
negative rail pin is connected with system ground. The Positive ESD current is steered to the ground
through the internal zener diode to protect the power supply of the circuit protected.
FEATURES
APPLICATION
• Single Channel ESD protection
• Cellular Handsets & Accessories
• Provides ESD protection to IEC61000-4-2 level 4
• Digital Cameras
- + 15KV Air Discharge
• Flat Panel Monitors / TVs
- + 10KV Contact Discharge
• Cellular Handsets & Accessories
• Ultra low capacitance 0.9pF ( Max )
• Notebooks
• Low clamping voltage & 5V operation voltage
MECHANICAL INFORMATION
• Case : DFN-2-1.0x0.6x0.5 Package
• Pb-Free, Halogen Free, RoHS/WEEE Complian
HYESD2045FN2
DFN-2
PIN CONFIGURATION
1
2
REV. 0.9, 16-May-2012
HYESD2045FN2
Maximum Rating and Thermal Characteristics ( TC=25℃ )
Parameter
Symbol
Value
Unit
Peak Pulse Power(8/20μs)
PPP
120
W
Peak Pulse Current(8/20μs)
IPP
5
A
ESD per IEC 61000-4-2(Air)
VESD
+15KV
V
ESD per IEC 61000-4-2(Contact)
VESD
+10KV
V
Operating Temperature Range
Top
-55 to +125
℃
Storage Temperature Range
Tstg
-55 to +150
℃
Electrical Characteristics ( TC=25℃, unless otherwise noted )
Parameter
Test Condition
Min
Typ
Max
Unit
VRWM I/O pin to GND
-
-
5
V
IBR =1mA;
I/O pin to GND
6
-
IR
VRWM =5V, T=25°C;
I/O pin to GND
-
-
1
uA
VC
IPP=1A, tP=8/20us;
Positive pulse;
I/O pin to GND
-
8.5
12
V
Negative Clamping Voltage
VC
IPP=1A, tP=8/20us;
Negative pulse;
I/O pin to GND
-
1.8
-
V
Junction Capacitance
Between I/O And GND
CJ
VR=0V, f=1MHz;
I/O pin to GND
-
0.5
0.9
pF
Reverse Working Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Positive Clamping Voltage
Symbol
VBR
V
REV. 0.9, 16-May-2012
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