Fairchild BC307 Pnp epitaxial silicon transistor Datasheet

BC307/308/309
BC307/308/309
Switching and Amplifier Applications
• Low Noise: BC309
TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCES
VCEO
Parameter
Collector-Emitter Voltage
: BC307
: BC308/309
Collector-Emitter Voltage
: BC307
: BC308/309
Value
Units
-50
-30
V
V
-45
-25
V
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-100
mA
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309
Test Condition
IC= -2mA, IB=0
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309
IC= -10µA, VBE=0
BVEBO
Emitter-Base Breakdown Voltage
IE= -10µA, IC=0
ICES
Collector Cut-off Current
: BC307
: BC308/309
VCE= -45V, VBE=0
VCE= -25V, VBE=0
BVCES
Min.
Typ.
Max.
Units
-45
-25
V
V
-50
-30
V
V
-5
V
-2
-2
-15
-15
hFE
DC Current Gain
VCE= -5V, IC= -2mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
-0.5
V
V
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
-0.7
-0.85
V
V
VBE (sat)
Collector-Base Saturation Voltage
120
nA
nA
VBE (on)
Base-Emitter On Voltage
VCE= -5V, IC= -2mA
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA, f=50MHz
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
Cib
Input Capacitance
VEB= -0.5V, IC=0, f=1MHz
NF
Noise Figure
: BC307/308
: BC309
: BC309
-0.55
VCE= -5V, IC= -0.2mA,
RG=2KΩ, f=1KHz
VCE= -5V, IC= -0.2mA
RG=2KΩ, f=30~15KHz
800
-0.3
-0.62
-0.7
V
130
MHz
6
pF
12
2
pF
10
4
4
dB
dB
dB
hFE Classification
Classification
A
B
C
hFE
120 ~ 220
180 ~ 460
380 ~ 800
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC307/308/309
Electrical Characteristics Ta=25°C unless otherwise noted
BC307/308/309
Typical Characteristics
-50
1000
IB = -400µA
VCE = -5V
IB = -350µA
-40
IB = -300µA
-35
IB = -250µA
-30
IB = -200µA
-25
-20
IB = -150µA
-15
IB = -100µA
-10
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-45
100
10
IB = -50µA
-5
-2
-4
-6
-8
-10
-12
-14
-16
-18
1
-0.1
-20
-100
Figure 2. DC current Gain
-10
-100
VCE = -5V
IC = -10 IB
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
V BE(sat)
-0.1
VCE(sat)
-0.01
-0.1
-1
-10
-10
-1
-0.1
-0.0
-100
-0.2
IC[mA], COLLECTOR CURRENT
10
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
-0.6
-0.8
-1.0
-1.2
Figure 4. Base-Emitter Capacitance
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
f=1MHz
IE = 0
-0.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Cob[pF], CAPACITANCE
-10
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1
-1
1000
VCE = -5V
100
10
-1
-10
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. A2, August 2002
BC307/308/309
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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