Infineon BCX71J Pnp silicon af transistor Datasheet

BCW61..., BCX71...
PNP Silicon AF Transistors
• For AF input stages and driver applications
2
3
• High current gain
1
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types: BCW60, BCX70 (NPN)
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
Marking
BCW61A
BAs
1=B
2=E
3=C
SOT23
BCW61B
BBs
1=B
2=E
3=C
SOT23
BCW61C
BCs
1=B
2=E
3=C
SOT23
BCW61D
BDs
1=B
2=E
3=C
SOT23
BCX71G
BGs
1=B
2=E
3=C
SOT23
BCX71H
BHs
1=B
2=E
3=C
SOT23
BCX71J
BJs
1=B
2=E
3=C
SOT23
BCX71K
BKs
1=B
2=E
3=C
SOT23
1Pb-containing
Pin Configuration
Package
package may be available upon special request
1
2007-10-18
BCW61..., BCX71...
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BCW61...
32
BCX71...
45
Collector-base voltage
Unit
VCBO
BCW61...
32
BCX71...
45
5
Emitter-base voltage
VEBO
Collector current
IC
100
Peak collector current
ICM
200
Peak base current
IBM
200
Total power dissipation-
Ptot
330
mW
Junction temperature
Tj
150
-
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point 1)
Symbol
RthJS
mA
TS ≤ 71 °C
1For
-65 ... 150
Value
≤ 240
°C
Unit
K/W
calculation of RthJA please refer to Application Note Thermal Resistance
2
2007-10-18
BCW61..., BCX71...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 10 mA, IB = 0 , BCW61...
32
-
-
IC = 10 mA, IB = 0 , BCX71...
45
-
-
IC = 10 µA, IE = 0 , BCW61...
32
-
-
IC = 10 µA, IE = 0 , BCX71...
45
-
-
5
-
-
Collector-base breakdown voltage
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 32 V, IE = 0
-
-
0.02
VCB = 45 V, IE = 0
-
-
0.02
VCB = 32 V, IE = 0 , TA = 150 °C, BCW61...
-
-
20
VCB = 45 V, IE = 0 , TA = 150 °C, BCX71...
-
-
20
-
-
20
Emitter-base cutoff current
I EBO
nA
VEB = 4 V, IC = 0
DC current gain1)
-
h FE
IC = 10 µA, VCE = 5 V, hFE-grp. A/G
20
140
-
IC = 10 µA, VCE = 5 V, hFE-grp. B/H
30
200
-
IC = 10 µA, VCE = 5 V, hFE-grp. C/J
40
300
-
IC = 10 µA, VCE = 5 V, hFE-grp. D/K
100
460
-
IC = 2 mA, VCE = 5 V, hFE-grp. A/G
120
170
220
IC = 2 mA, VCE = 5 V, hFE-grp. B/H
180
250
310
IC = 2 mA, VCE = 5 V, hFE-grp. C/J
250
350
460
IC = 2 mA, VCE = 5 V, hFE-grp. D/K
380
500
630
IC = 50 mA, VCE = 1 V, hFE-grp. A/G
60
-
-
IC = 50 mA, VCE = 1 V, hFE-grp. B/H
80
-
-
IC = 50 mA, VCE = 1 V, hFE-grp. C/J
100
-
-
IC = 50 mA, VCE = 1 V, hFE-grp. D/K
110
-
-
3
2007-10-18
BCW61..., BCX71...
DC Electrical Characteristics
Symbol
Parameter
Values
min.
typ.
Unit
max.
Characteristics
Collector-emitter saturation voltage1)
V
VCEsat
IC = 10 mA, IB = 0.25 mA
-
0.12
0.25
IC = 50 mA, IB = 1.25 mA
-
0.2
0.55
IC = 10 mA, IB = 0.25 mA
-
0.7
0.85
IC = 50 mA, IB = 1.25 mA
-
0.83
1.05
IC = 10 µA, VCE = 5 V
-
0.52
-
IC = 2 mA, VCE = 5 V
0.55
0.65
0.75
IC = 50 mA, VCE = 1 V
-
0.78
-
Base emitter saturation voltage 1)
VBEsat
Base-emitter voltage1)
1Pulse
VBE(ON)
test: t < 300µs; D < 2%
4
2007-10-18
BCW61..., BCX71...
AC Characteristics
Transition frequency
fT
-
250
-
MHz
Ccb
-
1.5
-
pF
Ceb
-
8
-
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
kΩ
h 11e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. A/B
-
2.7
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/H
-
3.6
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/J
-
4.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/K
-
7.5
-
Open-circuit reverse voltage transf. ratio
10-4
h 12e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. A/B
-
1.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/H
-
2
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/J
-
2
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/K
-
3
-
Short-circuit forward current transf. ratio
-
h 21e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. A/B
-
200
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/H
-
260
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/J
-
330
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/K
-
520
-
Open-circuit output admittance
µS
h 22e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. A/B
-
18
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/H
-
24
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/J
-
30
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/K
-
50
-
-
2
-
Noise figure
F
dB
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ, hFE-grp. A/K
5
2007-10-18
BCW61..., BCX71...
DC current gain hFE = ƒ(IC)
VCE = 5 V
10 3
h FE
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 40
BCW 61/BCX 71
5
EHP00351
ΙC
100 ˚C
BCW 61/BCX 71
10 2
EHP00349
mA
25 ˚C
-50 ˚C
10 2
10 1
5
5
10 1
10 0
5
5
10 0
10 -2
100 ˚C
25 ˚C
-50 ˚C
10 -1
10 0
10 1
10 -1
mA 10 2
0
0.1
0.2
0.3
0.4
ΙC
Collector current I C = ƒ(V BE)
IC = ƒ(V BEsat), hFE = 40
VCE = 5 V
ΙC
BCW 61/BCX 71
0.5
V CEsat
Base-emitter saturation voltage
10 2
V
EHP00348
mA
10 2
BCW 61/BCX 71
EHP00350
Ι C mA
100 ˚C
25 ˚C
-50 ˚C
10 1
10 1
5
5
10 0
5
10 0
100 ˚C
10 -1
5
25 ˚C
-50 ˚C
5
10 -1
0
0.2
0.4
0.6
0.8
V
10 -2
1.2
V BE sat
0
0.5
V
1.0
V BE
6
2007-10-18
BCW61..., BCX71...
Collector cutoff current ICBO = ƒ(TA)
VCB = V CEmax
BCW 61/BCX 71
10 4
nA
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10 3
EHP00352
fT
Ι CBO
BCW 61/BCX 71
EHP00347
MHz
5
10 3
max
10 2
10 2
10 1
5
typ
10 0
10 -1
0
50
100
10 1
10 0
150
C
5 10 1
5 10 2
mA
ΙC
TA
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
Total power dissipation Ptot = ƒ(TS)
12
360
mW
pF
10
300
9
270
8
240
Ptot
CCB(CEB )
10 3
7
6
210
180
5
150
CEB
4
120
3
90
2
60
1
0
0
30
CCB
4
8
12
16
V
0
0
22
VCB(VEB)
7
15
30
45
60
75
90 105 120
°C 150
TS
2007-10-18
BCW61..., BCX71...
h parameter he = ƒ(IC) normalized
VCE = 5V
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
10 3
BCW 61/BCX 71
EHP00345
Ptot max
5
Ptot DC
D=
tp
T
10 2
BCW 61/BCX 71
EHP00353
tp
he
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10
1
10
1
V CE = 5 V
h 11e
5
h 12e
10
0
5
5
h 21e
h 22e
10
0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10
10 0
-1
10 -1
5
10 0
mA
ΙC
tp
h parameter he = ƒ(VCE ) normalized
IC = 2mA
2.0
BCW 61/BCX 71
he
Noise figure F = ƒ(VCE)
IC = 0.2mA, R S = 2kΩ , f = 1kHz
EHP00354
Ι C = 2 mA
20
F
BCW 61/BCX 71
EHP00355
dB
h 11
1.5
15
1.0
10
h 12
h 22
0.5
0
10 1
5
0
10
20
V
0
10 -1
30
VCE
10 0
10 1
V
10 2
VCE
8
2007-10-18
BCW61..., BCX71...
Noise figure F = ƒ(f)
Noise figure F = ƒ(I C)
VCE = 5V, f = 120Hz
VCE = 5V, ZS = ZSopt
20
F
BCW 61/BCX 71
EHP00356
20
dB
F
BCW 61/BCX 71
EHP00357
dB
15
15
10
10
RS = 1 MΩ
100 k Ω
10 k Ω
500 Ω
5
5
1 kΩ
0
10 -2
10 -1
10 0
10 1
Noise figure F = ƒ(IC )
VCE = 5V, f = 1kHz
20
F
0
10 -3
kHz 10 2
f
10 0
mA 10 1
ΙC
EHP00358
dB
20
F
BCW 61/BCX 71
EHP00359
dB
RS = 1 MΩ
15
RS = 1 MΩ 100 k Ω 10 kΩ
100 k Ω
10
10
10 k Ω
500 Ω
1k Ω
5
5
1 kΩ
500 Ω
0
10 -3
10 -1
Noise figure F = ƒ(I C)
VCE = 5V, f = 10kHz
BCW 61/BCX 71
15
10 -2
10 -2
10 -1
10 0
0
10 -3
mA 10 1
ΙC
10 -2
10 -1
10 0
mA 10 1
ΙC
9
2007-10-18
Package SOT23
BCW61..., BCX71...
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
10
2007-10-18
BCW61..., BCX71...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
11
2007-10-18
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