Infineon BCX54 Npn silicon af transistor Datasheet

BCX54...BCX56
NPN Silicon AF Transistors
For AF driver and output stages
1
High collector current
2
Low collector-emitter saturation voltage
3
Complementary types: BCX51...BCX53 (PNP)
2
VPS05162
Type
Marking
Pin Configuration
BCX54
BA
1=B
2=C
3=E
SOT89
BCX54-10
BC
1=B
2=C
3=E
SOT89
BCX54-16
BD
1=B
2=C
3=E
SOT89
BCX55
BE
1=B
2=C
3=E
SOT89
BCX55-10
BG
1=B
2=C
3=E
SOT89
BCX55-16
BM
1=B
2=C
3=E
SOT89
BCX56
BH
1=B
2=C
3=E
SOT89
BCX56-10
BK
1=B
2=C
3=E
SOT89
BCX56-16
BL
1=B
2=C
3=E
SOT89
1
Package
Jul-10-2001
BCX54...BCX56
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Collector-base voltage
BCX54
Unit
BCX55
BCX56
45
60
80
VCBO
45
60
100
Emitter-base voltage
VEBO
5
5
5
DC collector current
IC
Peak collector current
ICM
1.5
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 130 °C
Ptot
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
1
V
A
mA
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
20
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
Jul-10-2001
BCX54...BCX56
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCX54
45
-
-
BCX55
60
-
-
BCX56
80
-
-
BCX54
45
-
-
BCX55
60
-
-
BCX56
100
-
-
V(BR)EBO
5
-
-
ICBO
-
-
100
nA
ICBO
-
-
20
µA
hFE
25
-
-
BCX54...56
40
-
250
hFE-grp.10
63
100
160
hFE-grp.16
100
160
250
25
-
-
VCEsat
-
-
0.5
VBE(ON)
-
-
1
fT
-
100
-
Collector-base breakdown voltage
IC = 100 µA, IB = 0
V
V(BR)CEO
V(BR)CBO
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
-
IC = 5 mA, VCE = 2 V
DC current gain 1)
IC = 150 mA, VCE = 2 V
hFE
DC current gain 1)
hFE
IC = 500 mA, VCE = 2 V
Collector-emitter saturation voltage1)
V
IC = 500 mA, IB = 50 mA
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V
AC Characteristics
Transition frequency
MHz
IC = 50 mA, VCE = 10 V, f = 20 MHz
1) Pulse test: t ≤=300µs, D = 2%
3
Jul-10-2001
BCX54...BCX56
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC)
VCE = 10V
10 3
1.2
BCX 54...56
EHP00445
MHz
W
P tot
fT
5
0.8
10 2
0.6
5
0.4
0.2
0
0
15
30
45
60
90 105 120 °C
75
10 1
10 0
150
5 10 1
5
10 2
mA
ΙC
TS
Permissible pulse load
Collector cutoff current ICBO = f (T A)
Ptotmax / PtotDC = f (tp )
VCB = 30V
10 3
BCX 54...56
EHP00446
Ptot max
5
Ptot DC
D=
10 4
nA
tp
tp
T
10 3
Ι CB0
T
BCX 54...56
EHP00447
max
10 3
5
10
2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
10 2
5
typ
10 1
5
5
10
0
5
10 0
10 -6
10
-5
10
-4
10
-3
10
-2
s
10
10 -1
0
0
50
100
˚C
150
TA
tp
4
Jul-10-2001
BCX54...BCX56
Collector current IC = f (VBE)
Collector-emitter saturation voltage
VCE = 2V
IC = f (VCEsat), h FE = 10
10 4
BCX 54...56
EHP00448
10
mA
4 BCX 54...56
EHP00449
mA
ΙC
ΙC
3
10
10
5
5
100 ˚C
25 ˚C
-50 ˚C
10 2
10
5
5
1
10
10
5
5
10 0
0
0.2
0.6
0.4
3
0.8
10
1.0 V 1.2
100 ˚C
25 ˚C
-50 ˚C
2
1
0
0
0.2
0.4
VBE
DC current gain hFE = f (I C)
IC = f (VBEsat ), hFE = 10
VCE = 2V
BCX 54...56
V
0.8
VCE sat
Base-emitter saturation voltage
10 4
0.6
EHP00450
10 3
BCX 54...56
EHP00451
mA
5
ΙC
h FE
10
3
100 ˚C
5
10
10 2
100 ˚C
25 ˚C
-50 ˚C
5
25 ˚C
-50 ˚C
2
5
10 1
1
10
5
5
10 0
0
0.2
0.4
0.6
0.8
10 0
10 -1
1.0 V 1.2
5 10 0
5 10 1
5 10 2
mA 10 3
ΙC
VBE sat
5
Jul-10-2001
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