Advance Technical Data High Voltage IGBT IXGH 22N170 VCES IXGT 22N170 IC25 VCE(sat) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 44 A IC90 TC = 90°C 22 A ICM TC = 25°C, 1 ms 130 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load PC TC = 25°C ICM = 50 @ 0.8 VCES A 210 W TO-268 (IXGT) G E G -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 300 °C 260 °C z z z Md Mounting torque (TO-247) 1.13/10 Weight TO-247 AD TO-268 Nm/lb.in.7 6 4 g g C (TAB) TO-247 AD (IXGH) G = Gate, E = Emitter, TJ = 1700 V = 40 A = 3.3 V = 290 ns z z C (TAB) C E C = Collector, TAB = Collector International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. z z z z = 250 µA, VGE = 0 V = 250 µA, VCE = VGE BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2005 IXYS All rights reserved 1700 3.0 TJ = 25°C TJ = 125°C TJ = 25°C 2.0 5.0 V V 50 500 µA µA ±100 nA 3.0 V z Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages z z z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS99325(02/05) IXGH 22N170 IXGT 22N170 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IC(ON) VGE = 10V, VCE = 10V 20 S 100 A 1900 pF 96 pF Cres 26 pF Qg 85 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC25, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Ω td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG VCE = 0.8 VCES, RG = Roff = 5 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG nC 26 nC 42 ns 39 ns TBD ns TBD ns TBD mJ 50 ns 55 ns 2.0 mJ TBD ns TBD ns TBD mJ Inductive load, TJ = 125°°C IC = IC25, VGE = 15 V 13 RthJC RthCK TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.6 K/W (TO-247) 0.25 K/W Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2