UTC BCP69 Pnp medium power transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BCP69
PNP EPITAXIAL SILICON TRANSISTOR
PNP MEDIUM POWER
TRANSISTOR
FEATURES
* High current (max. 1 A)
* Low voltage (max. 20 V).
* Complementary to UTC BCP68
1
SOT-223
APPLICATIONS
* General purpose switching and amplification
* Power applications such as audio output stages.
*Pb-free plating product number:BCP69L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BCP69-xx-AA3-F-R
BCP69L-xx-AA3-F-R
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
BCP69L-xx-AA3-F-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AA3: SOT-223
(4) xx: refer to Classification of hFE
(5) L: Lead Free Plating, Blank: Pb/Sn
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QW-R207-009,C
BCP69
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (Open Emitter)
VCBO
-32
V
Collector-Emitter Voltage (Open Base)
VCEO
-20
V
Emitter-Base Voltage (Open Collector)
VEBO
-5
V
Collector Current (DC)
IC
-1
A
Peak Collector Current
ICM
-2
A
Peak Base Current
IBM
-200
mA
Total Power Dissipation, Ta ≤ 25℃
PD
1.35
W
Junction Temperature
TJ
150
℃
Operating Ambient Temperature
TOPR
-45 ~ +150
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance From Junction To Ambient (Note 1)
SYMBOL
θJA
RATINGS
91
UNIT
K/W
ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified.)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Capacitance
Transition Frequency
DC current gain ratio of the
complementary pairs
SYMBOL
TEST CONDITIONS
VCE(SAT) IC = -1A, IB = -100mA
IC = -5mA, VCE = -10V
VBE
IC = -1A, VCE = -1V
IE = 0, VCB = -25V
ICBO
IE = 0, VCB = -25V, TJ = 150℃
IEBO
IC = 0, VEB = -5V
IC = -5mA, VCE = -10V
hFE
IC = -500mA, VCE = -1V
IC = -1A, VCE = -1V
CC
IE = ie = 0, VCB = -5V, f = 1MHz
fT
IC = -10mA, VCE = -5V, f = 100MHz
hFE1
|IC| = 0.5A, |VCE| = 1V
hFE2
MIN
TYP MAX UNIT
-500 mV
-620
mV
-1
V
-100 nA
-10
µA
-100 nA
50
85
60
375
48
pF
MHz
40
1.6
CLASSIFICATION OF hFE
RANK
RANGE
16
100~250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25
160~375
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QW-R207-009,C
BCP69
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain (Typical Values)
400
VCE = -1V
hFE
300
200
100
0 -1
10
-1
-102
-10
-103
-10 4
IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-009,C
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