IXYS IXFN21N100Q Hiperfet tm power mosfets q-class Datasheet

HiPerFETTM
Power MOSFETs
Q-Class
IXFN 21N100Q
Single MOSFET Die
VDSS = 1000 V
=
21 A
ID25
RDS(on) = 0.50 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
21
A
IDM
TC = 25°C, pulse width limited by TJM
84
A
IAR
TC = 25°C
21
A
EAR
TC = 25°C
60
mJ
2.5
J
5
V/ns
EAS
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
520
W
-55 to +150
°C
TJM
150
°C
Tstg
-55 to +150
°C
2500
3000
V~
V~
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
30
g
TJ
VISOL
50/60 Hz, RMS
IISOL≤ 1 mA
t = 1 min
t=1s
Md
Mounting torque
Terminal connection torque
Weight
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
-faster switching
• Unclamped Inductive Switching (UIS)
rated
• Low RDS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride
isolation for low thermal resistance
• Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0
flammability classification
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 1.5 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
1000
2.5
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2001 IXYS All rights reserved
V
4.5
V
±100
nA
100
2
µA
mA
0.50
Ω
Applications
• DC-DC converters
•
•
•
•
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
• Easy to mount
•
•
Space savings
High power density
98762A (12/01)
IXFN 21N100Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
16
22
S
5900
pF
550
pF
Crss
90
pF
td(on)
21
ns
Ciss
Coss
tr
18
td(off)
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG
= 1 Ω (External)
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
18
ns
60
ns
12
ns
Inches
Min.
Max.
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
38
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
75
nC
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
K/W
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
K/W
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
0.05
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Test Conditions
IS
VGS = 0 V
21
A
ISM
Repetitive; pulse width limited by TJM
84
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
250
ns
µC
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V
Millimeter
Min.
Max.
A
B
Symbol
trr
QRM
IRM
Dim.
nC
0.24
Source-Drain Diode
M4 screws (4x) supplied
170
RthJC
RthCK
miniBLOC, SOT-227 B
1.4
8
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFN 21N100Q
35
35
TJ = 25OC
20
ID - Amperes
ID - Amperes
VGS = 9V
8V
7V
6V
25
TJ = 125OC
30
30
5V
15
10
VGS = 9V
8V
7V
6V
25
20
15
10
5V
5
5
4V
4V
0
0
0
5
10
15
20
0
5
10
VDS - Volts
20
25
30
VDS - Volts
Fig.2 Output Characteristics @ Tj = 125°C
Fig.1 Output Characteristics @ Tj = 25°C
2.6
2.8
VGS = 10V
VGS = 10V
2.4
RDS(ON) - Normalized
RDS(ON) - Normalized
15
TJ = 125OC
2.0
1.6
1.2
2.2
ID = 21A
1.8
ID =10.5A
1.4
TJ = 25OC
1.0
25
0.8
0
10
20
30
50
75
100
125
150
TJ - Degrees C
ID - Amperes
Fig.3 RDS(on) vs. Drain Current
Fig.4 Temperature Dependence of Drain
to Source Resistance
24
25
20
20
TJ = 150 C
ID - Amperes
ID - Amperes
o
15
10
16
12
TJ = 125OC
8
TJ = 25oC
5
4
0
-50
-25
0
25
50
75
100 125 150
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
TC - Degrees C
VGS - Volts
Fig.5 Drain Current vs. Case Temperature
Fig.6 Drain Current vs Gate Source Voltage
© 2001 IXYS All rights reserved
IXFN 21N100Q
30000
10
VDS = 500 V
ID = 21 A
IG = 10 mA
Ciss
10000
Capacitance - pF
VGS - Volts
8
6
4
f = 100kHz
Coss
1000
Crss
2
100
0
0
40
80
120
160
0
200
5
10
15
20
25
30
35
40
VDS - Volts
Gate Charge - nC
Fig.7 Gate Charge Characteristic Curve
Fig.8 Capacitance Curves
80
ID - Amperes
60
40
TJ = 125OC
TJ = 25OC
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD - Volts
Fig.9 Drain Current vs Drain to Source Voltage
R(th)JC - K/W
1.000
0.100
0.010
0.001
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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