Diodes CTA2P1N Complex transistor array Datasheet

SPICE MODEL: CTA2P1N
CTA2P1N
COMPLEX TRANSISTOR ARRAY
NEW PRODUCT
Features
·
·
·
·
Combines MMBT4403 type transistor with 2N7002 type MOSFET
Small Surface Mount Package
NPN/P-Channel Complement Available: CTA2N1P
SOT-363
Lead Free/RoHS Compliant (Note 1)
A
Mechanical Data
·
·
·
·
·
·
·
·
·
A80
B C
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
G
H
Moisture Sensitivity: Level 1 per J-STD-020C
K
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
M
J
D
L
F
Terminal Connections: See Diagram
Marking: A80, See Page 3
CQ1
Ordering Information: See Page 3
GQ2
SQ2
Q1
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
Weight: 0.006 grams (approx.)
Q2
EQ1
BQ1
DQ2
Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
Symbol
Value
Pd
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element
Characteristic
Unit
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-600
mA
Collector Current - Continuous
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS £ 1.0MW
VDGR
60
V
VGSS
±20
±40
V
ID
115
73
800
mA
Gate-Source Voltage
Drain Current (Note 2)
Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed
Notes: 1. No purposefully added lead.
DS30296 Rev. 7 - 2
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Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element
NEW PRODUCT
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-40
¾
V
IC = -100mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -100mA, IC = 0
ICEX
¾
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
IBL
¾
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
hFE
30
60
100
100
20
¾
¾
¾
300
¾
¾
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.40
-0.75
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.75
¾
-0.95
-1.30
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Output Capacitance
Ccb
¾
8.5
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
¾
30
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.5
15
kW
Voltage Feedback Ratio
hre
0.1
8.0
x 10-4
Small Signal Current Gain
hfe
60
500
¾
Output Admittance
hoe
1.0
100
mS
fT
200
¾
MHz
Delay Time
td
¾
15
ns
Rise Time
tr
¾
20
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
30
ns
OFF CHARACTERISTICS (Note 3)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
IC = -100µA, VCE =
IC = -1.0mA, VCE =
IC = -10mA, VCE =
IC = -150mA, VCE =
IC = -500mA, VCE =
-1.0V
-1.0V
-1.0V
-2.0V
-2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
VCE = -10V, IC = -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
VCC = -30V, IC = -150mA,
VBE(off) = -2.0V, IB1 = -15mA
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
BVDSS
60
Test Condition
70
¾
V
VGS = 0V, ID = 10mA
µA
VDS = 60V, VGS = 0V
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 125°C
IDSS
¾
¾
1.0
500
IGSS
¾
¾
±10
nA
VGS = ±20V, VDS = 0V
VGS(th)
1.0
¾
2.0
V
VDS = VGS, ID =-250mA
¾
3.2
4.4
7.5
13.5
W
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
ID(ON)
0.5
1.0
¾
A
VGS = 10V, VDS = 7.5V
gFS
80
¾
¾
mS
Input Capacitance
Ciss
¾
22
50
pF
Output Capacitance
Coss
¾
11
25
pF
Reverse Transfer Capacitance
Crss
¾
2.0
5.0
pF
Turn-On Delay Time
tD(ON)
¾
7.0
20
ns
Turn-Off Delay Time
tD(OFF)
¾
11
20
ns
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
@ Tj = 25°C
@ Tj = 125°C RDS (ON)
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
VDS = 25V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
VDD = 30V, ID = 0.2A,
RL = 150W, VGEN = 10V,
RGEN = 25W
Note: 2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found
on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short test pulse used to minimize self-heating effect.
DS30296 Rev. 7 - 2
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CTA2P1N
Notes:
(Note 4)
Device
Packaging
Shipping
CTA2P1N-7-F
SOT-363
3000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
A80
YM
NEW PRODUCT
Ordering Information
A80 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30296 Rev. 7 - 2
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CTA2P1N
MMBT4403 Section
NEW PRODUCT
30
20
CAPACITANCE (pF)
Cibo
10
5.0
Cobo
1.0
-0.1
-1.0
-30
-10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
REVERSE VOLTAGE (V)
Fig. 1 Typical Capacitance
1.6
1.4
1.2
IC = 10mA
IC = 100mA I = 300mA
C
IC = 30mA
IC = 1mA
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
1
0.1
10
100
IB, BASE CURRENT (mA)
Fig. 2 Typical Collector Saturation Region
1.0
IC
IB = 10
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
TA = 50°C
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
0.5
0
1
10
1000
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Collector Emitter Saturation Voltage
vs. Collector Current
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VCE = 5V
0.9
0.8
TA = -50°C
0.7
TA = 25°C
0.6
0.5
TA = 150°C
0.4
0.3
0.2
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Base-Emitter Voltage
vs. Collector Current
CTA2P1N
1000
hFE, DC CURRENT GAIN
fT, GAIN BANDWIDTH PRODUCT (MHz)
1000
VCE = 5V
TA = 150°C
TA = 25°C
100
TA = -50°C
10
1
VCE = 5V
100
10
1
1
10
1000
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 DC Current Gain vs. Collector Current
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Gain Bandwidth Product vs. Collector Current
200
PD, POWER DISSIPATION (mW)
NEW PRODUCT
MMBT4403 Section
150
100
50
0
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Max Power Dissipation vs
Ambient Temperature (Total Device)
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CTA2P1N
2N7002 Section
7
VGS = 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
ID, DRAIN-SOURCE CURRENT (A)
0.8
0.6
Tj = 25°C
6
5
VGS = 5.0V
5.5V
4
5.0V
3
VGS = 10V
0.4
2
0.2
1
0
0
0
1
3
2
0
5
4
0.2
0.4
0.6
0.8
1.0
ID, DRAIN CURRENT (A)
Fig. 9 On-Resistance vs Drain Current (2N7002)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 On-Region Characteristics (2N7002)
6
3.0
5
2.5
4
ID = 500mA
ID = 50mA
3
2.0
2
1.5
1
VGS = 10V,
ID = 200mA
1.0
-55
-30
-5
20
45
70
95
120
145
Tj, JUNCTION TEMPERATURE (°C)
Fig. 10 On-Resistance vs Junction Temperature (2N7002)
0
0
2
4
6
8
10
12
14
16
18
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002)
10
VGS, GATE SOURCE VOLTAGE (V)
NEW PRODUCT
1.0
VDS = 10V
9
8
7
6
TA = +125°C
TA = +75°C
5
4
3
TA = -55°C
TA = +25°C
2
1
0
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
Fig. 12 Typical Transfer Characteristics (2N7002)
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CTA2P1N
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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ã Diodes Incorporated
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