Microsemi JAN2N918 Npn low power silicon transistor Datasheet

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/301
DEVICES
LEVELS
2N918
2N918UB
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
50
mAdc
PT
200
mW
Top & Tstg
-65 to +200
°C
Collector Current
Total Power Dissipation @ TA = +25°C
(1)
Operating & Storage Junction Temperature Range
TO-72
2N918
Note: 1) Derate linearly 1.14mW/°C above TA > 25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
V(BR)CEO
15
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 3mAdc
Collector-Base Cutoff Current
VCB = 30Vdc
VCB = 25Vdc
VCB = 25Vdc; TA = +150°C
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 2.5Vdc
Forward-Current Transfer Ratio
ICBO
IEBO
IC = 0.5mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 1.0Vdc
Vdc
1.0
10
1.0
µAdc
ηAdc
µAdc
10
10
µAdc
ηAdc
10
hFE
20
IC = 10mAdc, VCE = 10Vdc
20
IC = 3.0mAdc, VCE = 1.0Vdc; TA = -55°C
10
200
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
VCE(sat)
0.4
Vdc
Base-Emitter Voltage
IC = 10mAdc, IB = 1.0mAdc
VBE(sat)
1.0
Vdc
T4-LDS-0010 Rev. 3 (101342)
3 PIN
2N918UB
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small-Signal Short-Circuit - Forward Current Transfer Ratio
IC = 4mAdc, VCE = 10Vdc, f = 100MHz
Symbol
Min.
Max.
|hfe|
6.0
18
Unit
Output Capacitance
VCB = 0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo1
3.0
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo2
1.7
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
2.0
pF
NF
6.0
dB
Noise Figure (1)
VCE = 6V, IC = 1.0mA, f = 60MHz
gs = 2.5mmho
pF
Small-Signal Power Gain (1)
VCB = 12V, IC = 6.0mA, f = 200MHz
Gpe
Collector-Base Time Constant (1)
VCB = 10V, IE = -4.0mA, f = 79.8MHz
Rb’CC
Oscillator Power Output (1)
VCB = 1.5V, IC = 8.0mA, f ≥ 500MHz
Po
30
mW
Collector Efficiency
VCB = 15V, IC = 8.0mA, f > 500MHz
n
25
%
15
dB
25
ps
NOTES:
(1) For more detail see MIL-PRF-19500/301
T4-LDS-0010 Rev. 3 (101342)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Symbol
CD
Inches
Min
Max
.178
.195
CH
.170
.210
4.32
5.33
HD
.209
.230
5.31
5.84
LC
Millimeters
Min
Max
4.52
4.95
.100 TP
2.54 TP
Note
5
5
7,8
LD
.016
.021
.406
.533
7,8
LL
.500
.750
12.70
19.05
7,8
LU
.016
.019
.406
.483
L1
.050
1 .27
L2
.250
6.35
P
.100
2.54
Q
.040
1.02
TL
.028
.048
.71
1.22
TW
.036
.046
.91
1.17
r
α
.007
5
.18
45° TP
NOTES:
1. Dimension are in inches.
2.
Millimeters are given for general information only.
3.
Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).
4.
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
5.
6.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.025 -0.00 mm) below seating plane shall be within .007 inch
(0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
7.
uncontrolled in L1 and beyond LL minimum.
8.
All four leads.
Dimension r (radius) applies to both inside corners of tab.
9.
10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).
FIGURE 1. Physical dimensions for 2N918 (TO-72).
T4-LDS-0010 Rev. 3 (101342)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Millimeters
Min
Max
1.17
1.42
Symbol
Dimensions
BH
Inches
Min
Max
.046
.056
Note
Symbol
LS1
Inches
Min
Max
.036
.040
Millimeters
Min
Max
0.91
1.02
BL
.115
.128
2.92
3.25
LS2
.071
.079
1.80
2.01
BW
.085
.108
2.16
2.74
LW
.016
.024
0.41
0.61
CL
.128
3.25
r
.008
.203
CW
.108
2.74
r1
.012
.305
r2
.022
.559
LL1
.022
.038
0.56
0.97
LL2
.017
.035
0.4.
0.89
Note
NOTES:
1.
2.
3.
4.
5.
6.
Dimensions are in inches.
Millimeters are given for general information only.
Hatched areas on package denote metallized areas.
Lid material: Kovar.
Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions for 2N918UB, surface mount.
T4-LDS-0010 Rev. 3 (101342)
Page 4 of 4
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