VS-30ETH06PbF Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES Base cathode 2 • Reduced Qrr and soft recovery • 175 °C TJ maximum • For PFC CRM/CCM operation • Low forward voltage drop • Low leakage current 1 Cathode TO-220AC 3 Anode • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. PRODUCT SUMMARY Package TO-220AC IF(AV) 30 A VR 600 V The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. VF at IF 2.60 V trr (typ.) See Recovery table TJ max. 175 °C Diode variation Single die These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 103 °C 30 Non-repetitive peak surge current IFSM TJ = 25 °C 200 Operating junction and storage temperatures TJ, TStg A - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 2.0 2.6 IF = 30 A, TJ = 150 °C - 1.34 1.75 VR = VR rated - 0.3 50 TJ = 150 °C, VR = VR rated - 60 500 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 33 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Document Number: 94019 Revision: 28-Apr-11 μA For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30ETH06PbF Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current SYMBOL trr IRRM TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 28 35 TJ = 25 °C - 31 - TJ = 125 °C - 77 - TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = 200 A/μs VR = 200 V - 3.5 - - 7.7 - UNITS ns A TJ = 25 °C - 65 - TJ = 125 °C - 345 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC - 0.7 1.1 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.2 - - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device www.vishay.com 2 Case style TO-220AC °C/W 30ETH06 For technical questions within your region, please contact one of the following: Document Number: 94019 [email protected], [email protected], [email protected] Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30ETH06PbF Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 1000 100 TJ = 175 °C TJ = 150 °C TJ = 25 °C 10 1 TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0001 0 0.5 1 1.5 2.5 2 3 0 3.5 100 200 400 300 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 100 200 300 400 500 600 ZthJC - Thermal Impedance (°C/W) VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94019 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30ETH06PbF Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® 90 160 70 60 DC 140 120 Square wave (D = 0.50) Rated VR applied 50 40 30 20 100 10 See note (1) 0 5 10 15 20 25 30 35 40 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 80 45 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 1200 90 RMS limit 80 1000 70 VR = 200 V TJ = 125 °C TJ = 25 °C 800 60 50 Qrr (nC) Average Power Loss (W) IF = 30 A IF = 15 A 80 trr (ns) Allowable Case Temperature (°C) 180 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 40 30 20 10 600 IF = 30 A IF = 15 A 400 200 DC 0 0 5 10 15 20 25 30 35 40 45 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 94019 [email protected], [email protected], [email protected] Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30ETH06PbF Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94019 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30ETH06PbF Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® ORDERING INFORMATION TABLE Device code VS- 30 E T H 06 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - E = Single diode 4 - Package: T = TO-220 5 - H = Hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95221 Part marking information www.vishay.com/doc?95224 SPICE model www.vishay.com/doc?95422 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94019 [email protected], [email protected], [email protected] Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1