ISC BUP22A Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUP22A
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 350V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switchingregulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage VBE=0
650
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
6
A
PC
Collector Power Dissipation
@ TC=25℃
125
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
1.0
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUP22A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A ;IB= 0; L=25 mH
350
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A; IB= 0.67A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 6A; IB= 0.67A
1.5
V
ICES
Collector Cutoff Current
VCE= VCESmax;VBE= 0
VCE= VCESmax;VBE= 0; TJ= 125℃
1
2
mA
IEBO
Emitter Cutoff Current
VEB= 9V; IC=0
10
mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
B
TYP.
MAX
UNIT
V
B
B
25
Switching Times; Resistive Load
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
isc Website:www.iscsemi.cn
IC= 6A; IB1= -IB2= 0.67A
2
0.5
μs
3.0
μs
0.3
μs
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