MCC MPSA42 Npn silicon high voltage transistor 625mw Datasheet

MCC
MPSA42
omponents
21201 Itasca Street Chatsworth
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$ % !"#
THRU
MPSA43
Features
NPN Silicon High
l Through Hole Package
l 150oC Junction Temperature
Voltage Transistor
625mW
Pin Configuration
Bottom View
C
B
E
TO-92
Mechanical Data
A
E
l Case: TO-92, Molded Plastic
l Marking:
B
MPSA42 --------- A42
MPSA43 --------- A43
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Symbol
Collector-Emitter Voltage MPSA42
VCEO
MPSA43
Collector-Base Voltage MPSA42
VCBO
MPSA43
Emitter-Base Voltage
MPSA42
VEBO
MPSA43
Collector Current(DC)
IC
Power Dissipation@T A=25oC
Pd
Power Dissipation@T C=25oC
Pd
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Case
Operating & Storage Temperature
RqJA
RqJC
Value
300
200
300
200
Unit
5.0
V
300
625
5.0
1.5
12
mA
mW
mW/oC
W
mW/oC
200
o
83.3
Tj, TSTG -55~150
C
V
V
D
G
DIMENSIONS
C/W
o
C/W
o
C
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
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MAX
.185
.185
--.020
.145
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
--0.63
3.68
2.67
NOTE
MCC
MPSA42 thru MPSA43
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
300
200
—
—
300
200
—
—
5.0
—
—
—
0.25
0.1
—
—
0.25
0.1
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CEO
Vdc
MPSA42
MPSA43
V(BR)CBO
Vdc
MPSA42
MPSA43
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MPSA42
MPSA43
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MPSA42
MPSA43
Vdc
µAdc
ICBO
µAdc
IEBO
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
hFE
Collector – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
25
80
25
—
—
—
0.5
0.4
VBE(sat)
—
0.9
Vdc
fT
50
—
MHz
—
—
3.0
4.0
250
—
VCE(sat)
MPSA42
MPSA43
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5 Vdc, f = 30MHz)
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Ccb
MPSA42
MPSA43
pF
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MCC
MPSA42 thru MPSA43
120
100
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
80
25°C
60
40
–55°C
20
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
f T, CURRENT–GAIN — BANDWIDTH (MHz)
80
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
70
60
50
40
30
TJ = 25°C
VCE = 20 V
f = 20 MHz
20
10
1.0
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 3. Current–Gain – Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ –55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ –55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ –55°C, VCE = 10 V
0.6
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. ”ON” Voltages
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