APTGT580U60D4G Single switch Trench + Field Stop IGBT Power Module VCES = 600V IC = 600A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 3 Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated 5 2 • • • • Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 1200A@550V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2008 IC Max ratings 600 760 580 800 ±20 1600 RBSOA Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT580U60D4G – Rev 0 Symbol VCES APTGT580U60D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 600V Tj = 25°C VGE = 15V IC = 600A Tj = 125°C VGE = VCE , IC = 10mA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 1 1.9 mA 6.5 2400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=-8/+15V, IC=600A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 600A RG = 1.5Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 600A RG = 1.5Ω VGE = ±15V Tj = 150°C VBus = 300V IC = 600A Tj = 150°C RG = 1.5Ω VGE ≤15V ; VBus = 360V tp = 6µs ; Tj = 150°C Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Min Typ 37 2.3 1.1 nF 4.4 µC 250 70 550 ns 70 270 80 650 ns 80 7.5 mJ 30 3000 A Reverse diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=600V IF = 600A VGE = 0V IF = 600A VR = 300V di/dt =8600A/µs Err Reverse Recovery Energy www.microsemi.com Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 600 1.6 1.5 150 250 27 60 6.4 Tj = 150°C 14 Max 750 1000 Unit V µA A 2.1 V ns July, 2008 IRRM Test Conditions µC mJ 2-5 APTGT580U60D4G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT580U60D4G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 2500 -40 -40 -40 3 1 Typ Max 0.09 0.13 Unit °C/W V 175 125 125 5 2 350 °C N.m g www.microsemi.com 3-5 APTGT580U60D4G – Rev 0 July, 2008 D4 Package outline (dimensions in mm) APTGT580U60D4G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 1200 1200 TJ=25°C TJ = 150°C 600 VGE=15V 600 400 400 200 200 VGE=9V TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 40 30 E (mJ) 800 600 TJ=125°C 400 7 Err 8 9 10 11 0 12 150 750 900 1200 1000 IF (A) E (mJ) Eon 30 800 600 400 20 Err Eon 10 600 Reverse Bias Safe Operating Area Eoff 40 450 1400 VCE = 300V VGE =15V IC = 600A TJ = 150°C 50 300 IC (A) Switching Energy Losses vs Gate Resistance 60 3.5 Eoff 20 VGE (V) 70 3 0 0 6 2.5 Eon TJ=25°C 5 1.5 2 VCE (V) 10 TJ=150°C 200 1 VCE = 300V VGE = 15V RG = 1.5Ω TJ = 150°C TJ=25°C 1000 0.5 Energy losses vs Collector Current Transfert Characteristics 1200 IC (A) VGE=13V 800 TJ=150°C IC (A) IC (A) 800 80 VGE=19V 1000 1000 VGE=15V TJ=150°C RG=1.5Ω 200 0 0 0 2.5 5 7.5 Gate Resistance (ohms) 10 0 100 200 300 400 500 600 700 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 IGBT 0.9 0.7 0.04 0.02 0.5 July, 2008 0.06 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT580U60D4G – Rev 0 Thermal Impedance (°C/W) 0.1 APTGT580U60D4G Forward Characteristic of diode 1200 ZCS 40 ZVS 30 VCE=300V D=50% RG=1.5Ω TJ=150°C 1000 800 Tc=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 50 20 10 600 400 Hard switching TJ=150°C 200 TJ=25°C 0 100 0 200 300 400 500 IC (A) 600 700 0 800 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.14 0.12 0.1 0.08 0.06 Diode 0.9 0.7 0.5 0.3 0.04 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT580U60D4G – Rev 0 July, 2008 Rectangular Pulse Duration in Seconds