PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP127W █ APPLICATIONS PNP Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-263 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation（Tc=25℃）……………………………65W PC——Collector Dissipation（Ta=25℃）……………………………2W 1―Base，B 2―Collector，C 3―Emitter，E VCBO ——Collector-Base Voltage………………………………-100V VCEO——Collector-Emitter Voltage……………………………-100V VE B O ——Emitter -Base Voltage………………………………-5V IC——Collector Current（DC）………………………………………-5A IC——Collector Current（Pulse）……………………………………-8A Ib——Base Current……………………………………………-120mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCBO BVCEO HFE Characteristics Min Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Typ Max Unit －１００ Ｖ IC=-1mA, IE=0 －１００ Ｖ IC=-5mA, IB=0 １０００ *DC Current Gain Test Conditions VCE=-3V, IC=-0.5A VCE(sat1) *Collector- Emitter Saturation Voltage －２．０ Ｖ IC=-3A, IB=-12mA VCE(sat2) *Collector- Emitter Saturation Voltage －４．０ Ｖ IC=-3A, IB=-20mA VBE(ON) *Base-Emitter On Voltage －２．５ Ｖ VCE=-3V, IC=-3A Collector Cut-off Current －０．５ ｍＡ VCB=-50V, IB=0 ICEO ICBO Collector Cut-off Current －０．２ ｍＡ VCB=-100V, IE=0 IEBO Emitter Cut-off Current Output Capacitance ｍＡ ｐＦ VEB=-5V, IC=0 Cob －２．０ ３００ *Pulse Test：PW≤300μｓ，Ｄｕｔｙ ｃｙｃｌｅ≤2% VCB=-10V, IE=0，f=0.1ＭＨｚ PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP127W