IRF IRGP430U Insulated gate bipolar transistor(vces=500v, @vge=15v, ic=15a) Datasheet

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PD - 9.780A
IRGP430U
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast IGBT
C
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
VCES = 500V
VCE(sat) ≤ 3.0V
G
@VGE = 15V, I C = 15A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
VGE
EARV
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
500
25
15
50
50
±20
10
100
42
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-599
To Order
Min.
Typ.
Max.
—
—
—
—
—
0.24
—
6 (0.21)
1.2
—
40
—
Units
°C/W
g (oz)
Revision 0
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IRGP430U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
500
—
—
V
VGE = 0V, I C = 250µA
20
—
—
V
VGE = 0V, IC = 1.0A
— 0.46 —
V/°C VGE = 0V, I C = 1.0mA
—
2.3
3.0
IC = 15A
V GE = 15V
—
2.8
—
V
IC = 25A
See Fig. 2, 5
—
2.6
—
IC = 15A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-11
— mV/°C VCE = VGE, IC = 250µA
2.3 8.1
—
S
VCE = 100V, I C = 15A
—
—
250
µA
VGE = 0V, V CE = 500V
—
— 1000
VGE = 0V, V CE = 500V, T J = 150°C
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
31
6.2
12
29
11
91
66
0.24
0.17
0.41
13
27
130
130
0.76
13
660
110
12
Max. Units
Conditions
47
IC = 15A
9.3
nC
VCC = 400V
See Fig. 8
19
VGE = 15V
—
TJ = 25°C
—
ns
IC = 15A, V CC = 400V
160
VGE = 15V, R G = 23Ω
120
Energy losses include "tail"
—
—
mJ
See Fig. 9, 10, 11, 14
0.61
—
TJ = 150°C,
—
ns
IC = 15A, V CC = 400V
—
VGE = 15V, R G = 23Ω
—
Energy losses include "tail"
—
mJ
See Fig. 10, 14
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 23Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-600
To Order
Pulse width 5.0µs,
single shot.
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IRGP430U
40
LO A D C U R RE NT (A )
For bo th:
Tria ngular w ave:
D uty cyc le: 50%
TJ = 12 5°C
T s ink = 90°C
G ate drive as spec ifie d
Pow er D issipation = 24W
30
C lam p voltage:
80% of rated
Sq uare w ave:
20
60% of rated
voltage
10
Id e a l d iod e s
0
0.1
1
10
100
f, F re quency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
1000
IC , C ollector-to-E m itter Current (A )
I C , C ollector-to-E mitter C urrent (A )
100
TJ = 25 °C
TJ = 1 50 °C
10
V G E = 15 V
20 µs P UL S E W ID TH
1
1
100
T J = 1 50 °C
10
TJ = 25 °C
1
V C C = 1 00 V
5 µ s P UL S E W IDTH
0.1
5
10
10
15
V G E , G ate -to-E m itter V olta ge (V )
V C E , C o llector-to-Em itter V oltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-601
To Order
20
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IRGP430U
4.5
V G E = 15 V
V C E , C ollector-to-E mitter V oltage (V )
Maxim um D C Collector C urrent (A )
25
20
15
10
5
V G E = 15 V
80 µ s P U L S E W ID TH
4.0
I C = 3 0A
3.5
3.0
2.5
I C = 1 5A
2.0
I C = 7.5 A
1.5
1.0
0
25
50
75
100
125
-60
150
-40
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem perature (°C )
T C , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T he rm al R e sp ons e (Z thJ C )
10
1
D = 0 .5 0
0 .2 0
PD M
0 .1 0
0.1
0.01
0.00001
t
0 .0 5
0 .0 2
0 .0 1
1
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
N o te s :
1 . D u ty fa c to r D = t
1
/t
2
2
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.00 1
0.01
0.1
1
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-602
To Order
10
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IRGP430U
140 0
100 0
Cies
800
Coes
V G E , G ate-to-E m itter V oltag e (V )
120 0
C, C apacitance (pF)
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
16
12
600
400
V C E = 40 0V
I C = 15 A
Cres
200
0
8
4
0
1
10
0
100
10
V C E , C o llector-to-Em itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VCC
VGE
TC
IC
0 .4 6
30
40
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
= 40 0V
= 1 5V
= 25°C
= 15 A
T otal S w itch ing Losses (m J)
Total S w itching L osse s (mJ)
0 .4 8
20
Q G , To ta l G a te C h arg e (nC )
0 .4 4
0 .4 2
0 .4 0
R G = 50 Ω
V GE = 1 5 V
V CC = 40 0V
I C = 30A
1
I C = 1 5A
I C = 7.5A
0 .3 8
0.1
0
10
20
30
40
50
60
-60
R G , G ate R es istance (Ω )
-40
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem peratu re (°C )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-603
To Order
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IRGP430U
100
R G = 23 Ω
T C = 150°C
V C C = 4 00 V
V G E = 15 V
1.6
IC , Collector-to-Emitter Current (A)
Total S w itc hing Losses (m J)
2.0
1.2
0.8
0.4
VGE = 20V
TJ = 125°C
SAFE OPERATING AREA
10
A
1
0.0
0
10
20
30
1
40
10
100
VCE, Collector-to-Emitter Voltage (V)
I C , C ollecto r-to-E m itter C urrent (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix A: Section D - page D-3
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC
C-604
To Order
Section - page D-13
1000
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