DMG9933USD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features Description This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data V(BR)DSS RDS(on) max -20V 75mΩ @ VGS = -4.5V 110mΩ @ VGS = -2.5V ID max TA = +25°C -4.6A -2.9A Applications Backlighting Power Management Functions DC-DC Converters Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) SO-8 D1 S1 D1 G1 D1 S2 D2 G2 D2 Top View G1 G2 S1 Top View Internal Schematic D2 P-Channel MOSFET S2 P-Channel MOSFET Ordering Information (Note 4) Part Number DMG9933USD-13 Notes: Case SO-8 Packaging 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 G9933UD G9933UD YY WW YY WW 1 4 Chengdu A/T Site DMG9933USD Document number: DS32085 Rev. 3 - 2 1 = Manufacturer’s Marking G9933UD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 4 Shanghai A/T Site 1 of 6 www.diodes.com July 2014 © Diodes Incorporated DMG9933USD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current (Note 5) VGS = -4.5V TA = +25°C TA = +85°C Steady State Value -20 ±12 IDM -4.6 -3 -20 Symbol PD RθJA TJ, TSTG Value 1.15 109 -55 to +150 ID Pulsed Drain Current (Note 6) Unit V V A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C Operating and Storage Temperature Range Notes: Unit W °C/W °C 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 — — — — — — -1 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -16V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) -0.45 — -1.1 V RDS (ON) — — 55 76 75 110 mΩ |Yfs| VSD — — 10 -0.8 — -1.2 S V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.8A VGS = -2.5V, ID = -1A VDS = -9V, ID = -3.4A VGS = 0V, IS = -2A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — 608.4 81.5 72.4 44.91 6.5 0.9 1.5 12.45 10.29 46.52 22.19 — — — — — — — — — — — pF pF pF Ω nC nC nC ns ns ns ns VDS = -6V, VGS = 0V f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -10V, VGS = -4.5V, ID = -3.2A VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 1Ω, ID = -1A 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG9933USD Document number: DS32085 Rev. 3 - 2 2 of 6 www.diodes.com July 2014 © Diodes Incorporated DMG9933USD 10 VGS = -8.0V VGS = -2.5V 6 4 VGS = -1.5V 2 VDS = -5V 8 VGS = -2.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 6 4 TA = 150°C 2 T A = 125°C TA = 85°C VGS = -1.2V 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.20 0.15 -VGS = 1.8V -VGS = 2.5V 0.05 -VGS = 4.5V 0 0.1 1 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.7 1.5 1.3 1.1 -VGS = 5.0V -ID = 10A 0.9 -VGS = 2.5V -ID = 5.0A 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG9933USD Document number: DS32085 Rev. 3 - 2 T A = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 -VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 0.25 0.10 0 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 10 VGS = -4.5V VGS = -3.0V 3 of 6 www.diodes.com 0.16 VGS = 4.5V 0.12 TA = 150°C 0.08 TA = 125°C T A = 85°C TA = 25°C 0.04 0 T A = -55°C 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.16 0.12 -VGS = 2.5V -ID = 5.5A 0.08 -VGS = 5.0V -ID = 10A 0.04 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature July 2014 © Diodes Incorporated DMG9933USD 8 1.2 0.8 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 10 -ID = 1mA -ID = 250µA 0.4 -IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,000 f = 1MHz Ciss 100 Coss Crss 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 6 TA = 25°C 4 2 0 0.2 0 -50 C, CAPACITANCE (pF) 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 T A = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 0 4 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.6 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 156°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 T J - T A = P * R JA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG9933USD Document number: DS32085 Rev. 3 - 2 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 July 2014 © Diodes Incorporated DMG9933USD Package Outline Dimensions 0.254 NEW PRODUCT Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG9933USD Document number: DS32085 Rev. 3 - 2 5 of 6 www.diodes.com July 2014 © Diodes Incorporated DMG9933USD IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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