ZSELEC FR104G 1.0a glass passivated fast recovery diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
FR101G – FR107G
1.0A GLASS PASSIVATED FAST RECOVERY DIODE
Features
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Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
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C
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
D
DO-41
Max
Dim
Min
24.5
—
A
4.06
5.21
B
0.60
0.80
C
2.00
3.00
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TA = 75°C
FR101G FR102G FR103G FR104G FR105G FR106G FR107G
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
@IF = 1.0A
VFM
1.3
V
@TA = 25°C
@TA = 100°C
IRM
5.0
100
µA
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
trr
Typical Junction Capacitance (Note 3)
Cj
15
pF
Operating Temperature Range
Tj
-65 to +150
°C
TSTG
-65 to +150
°C
Storage Temperature Range
150
250
500
nS
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
FR101G – FR107G
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Z ibo Seno Electronic Engineering Co., Ltd.
FR101G – FR107G
1.0
10
IF, INSTANTANEOUS FWD CURRENT (A)
I(AV), AVERAGE FWD RECTIFIED CURRENT (A)
0.8
0.6
0.4
0.2
Single phase half-wave
60 Hz resistive or inductive load
0
1.0
0.1
Tj = 25°C
Pulse width = 300 µs
0.01
25
50
75
100
125
150
175
200
1.0
1.2
1.4
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
30
100
Tj = 25°C
f = 1MHz
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
20
10
10
1
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
100
1
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
FR101G – FR107G
2 of 2
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