HER301G THRU HER308G HD ZC84 DO-27 Plastic-Encapsulate Diodes High Efficient Rectifier Features ●Io 3.0A DO-2 7 ●VRRM 50V-1000V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● HER30XG X:From 1 to 8 HER30 Item Symbol Unit Conditions 1G 2G 3G 4G 5G 6G 7G 8G Repetitive Peak Reverse Voltage VRRM V 50 100 200 300 400 600 800 1000 Maximum RMS Voltage VRMS V 35 70 140 210 280 420 560 Average Forward Current IF(AV) A 60Hz Half-sine wave, Resistance load, Ta=75℃ 3.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 150 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Junction Temperature Storage Temperature 700 Electrical Characteristics (Ta=25℃ Unless otherwise specified) Item Peak Forward Voltage Peak Reverse Current Reverse Recovery time Symbol Unit VFM V IRRM1 IRRM2 trr μA ns Test Condition IFM=3.0A VRM=VRRM HER30 1G 2G 3G 1.0 4G 5G 1.3 Ta=25℃ 5 Ta=125℃ 50 IF=0.5A IR=1A IRR=0.25A 50 High Diode Semiconductor 6G 7G 8G 1.7 75 1 FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1: FORWARD CURRENT DERATING CURVE IFSM(A) 0 . 3 ︶ IO(A Typical Characteristics 200 170 5 2 . 2 8.3ms Single Half Sine Wave JEDEC Method 140 5 . 1 110 90 S 5 7 . 0 0 60 30 0 0 1 0 ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length 50 150 Ta(℃) 0 IR(uA) IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 20 HER301G-HER303G 1 2 10 20 100 Number of Cycles FIG.4:TYPICAL REVERSE CHARACTERISTICS 1000 10 HER304G-HER305G 4.0 100 HER306G-HER308G 2.0 Tj=125℃ 1.0 10 0.4 Tj=100℃ 0.2 1.0 0.1 Tj=25℃ TJ=25℃ Pulse width=300us 1% Duty Cycle 0.1 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0 1.8 20 40 60 80 VF(V) 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 .052(1.30) .044(1.10) .197(5.00) 0.96(24.5) MIN .220(5.60) 0.96(24.5) MIN .335(8.50) .375(9.50) DO-27 Unit: in inches (millimeters) JSHD JSHD High Diode Semiconductor 3 Ammo Box Packaging Specifications For Axial Lead Rectifiers High Diode Semiconductor 4