MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Features Rev. V2 MAGX-001214-500L00 GaN on SiC D-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260°C Reflow Compatible +50 V Typical Operation MTTF = 600 years (TJ < 200°C) Applications L-Band pulsed radar Description MAGX-001214-500L0S The MAGX-001214-500L00 is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Ordering Information Part Number Description MAGX-001214-500L00 Flanged MAGX-001214-500L0S Flangeless MAGX-001214-SB3PPR 1.2 - 1.4 GHz Evaluation Board * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V2 Typical RF Performance under standard operating conditions, POUT = 500 W (Peak) Freq. (MHz) PIN (W) Gain (dB) ID (A) Eff. (%) RL (dB) Droop (dB) +1dB OD (W) 1200 5.15 19.86 17.7 56.2 -12.7 0.29 568 1250 5.35 19.69 16.7 59.5 -10.3 0.30 561 1300 5.69 19.43 17.2 57.9 -10.9 0.33 554 1350 5.86 19.31 17.9 55.7 -15.3 0.36 547 1400 5.85 19.22 18.1 54.8 -17.5 0.38 549 Electrical Specifications: Freq. = 1200 - 1400 MHz, IDQ = 400 mA, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: VDD = 50 V; 300 µs / 10% Input Power POUT= 500 W Peak (50 W avg.) PIN - 6 8.9 Wpk Power Gain POUT= 500 W Peak (50 W avg.) GP 17.5 19.2 - dB Drain Efficiency POUT= 500 W Peak (50 W avg.) ηD 50 56 - % Pulse Droop POUT= 500 W Peak (50 W avg.) Droop - 0.4 0.7 dB Load Mismatch Stability POUT= 500 W Peak (50 W avg.) VSWR-S - 3:1 - - Load Mismatch Tolerance POUT= 500 W Peak (50 W avg.) VSWR-T - 5:1 - - Extended Pulse Width Conditions: VDD = 42 V; 1.0 ms / 10%; (typical RF data) Input Power POUT= 375 W Peak (37.5 W avg.) PIN - 5.3 - Wpk Power Gain POUT= 375 W Peak (37.5 W avg.) GP - 18.5 - dB Drain Efficiency POUT= 375 W Peak (37.5 W avg.) ηD - 55 - % Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - 1.0 30 mA Gate Threshold Voltage VDS = 5 V, ID = 75 mA VGS (TH) -5 -3.1 -2 V Forward Transconductance VDS = 5 V, ID = 17.5 mA GM 12.5 19.2 - S Input Capacitance Not applicable - Input matched CISS N/A N/A N/A pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 55 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 5.5 - pF Electrical Characteristics: TA = 25°C Parameter DC Characteristics: Dynamic Characteristics: 2 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V2 Absolute Maximum Ratings1,2,3,4 1. 2. 3. 4. Parameter Limit Supply Voltage (VDD) +65 V Supply Voltage (VGS) -8 to -2 V Supply Current (IDMAX) 21.5 A Input Power (PIN) PIN (nominal) + 3 dB Absolute Max. Junction/Channel Temp 200ºC Pulsed Power Dissipation at 85 ºC 583 W Thermal Resistance, (TJ= 70 ºC) VDD = 50 V, IDQ = 400 mA, Pout = 500 W, 300 µs Pulse / 10% Duty 0.30 ºC/W Operating Temp -40 to +95ºC Storage Temp -65 to +150ºC Mounting Temperature See solder reflow profile ESD Min. - Charged Device Model (CDM) 1300 V ESD Min. - Human Body Model (HBM) 4000 V Operation of this device above any one of these parameters may cause permanent damage. Input Power Limit is +3 dB over nominal drive required to achieve P OUT = 500 W. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. For saturated performance it recommended that the sum of (3*V DD + abs(VGG)) <175 V. Correct Device Sequencing Test Fixture Impedances F (MHz) ZIF (Ω) ZOF (Ω) 1200 1.2 - j1.2 1.8 + j0.5 1250 1.2 - j0.9 1.9 + j0.4 1300 1.3 - j0.6 2.0 + j0.3 1350 1.4 - j0.3 1.9 + j0.2 1400 1.6 + j0.0 1.7 + j0.1 Zif INPUT NETWORK Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS OUTPUT NETWORK Zof 3 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Test Fixture Circuit Dimensions Test Fixture Assembly Contact factory for gerber file or additional circuit information. 4 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Rev. V2 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V2 RF Power Transfer Curve (Output Power Vs. Input Power) 700 600 P OU T (W) 500 1200 MHz 400 1300 MHz 1400 MHz 300 200 100 1 2 3 4 5 6 7 8 9 10 P IN (W) RF Power Transfer Curve (Drain Efficiency Vs. Output Power) 70 Drain E ff. (%) 60 1200 MHz 50 1300 MHz 1400 MHz 40 30 100 200 300 400 P OU T (W) 500 600 700 5 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V2 Typical RF Data with ‘extended pulse’ conditions5: 1.0 ms Pulse, 10% Duty, VDD = 42 V, IDQ = 400 mA 525 450 POUT (W) 375 1200 MHz 1300 MHz 1400 MHz 300 225 150 1 2 3 4 5 PIN (W) 6 7 8 9 5. Drain Voltage and RF output power is de-rated to keep junction temperature within acceptable levels. 6 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Outline Drawing MAGX-002114-500L00 M/A-COM GX1214-500L LOT NO. / SER NO. 7 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Rev. V2 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Outline Drawing MAGX-002114-500L0S M/A-COM GX1214-500LS LOT NO. / SER NO. 8 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Rev. V2