IRF IRHI7360SE Transistor n-channel(bvdss=400v, rds(on)=0.20ohm, id=24.3a) Datasheet

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Provisional Data Sheet No. PD-9.1446A
REPETITIVE AVALANCHE AND dv/dt RATED
IRHI7360SE
HEXFET® TRANSISTOR
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Ω, (SEE) RAD HARD HEXFET
400 Volt, 0.20Ω
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
IRHI7360SE
BV DSS
400V
■
■
■
■
■
■
■
■
■
■
■
■
■
Radiation Hardened up to 1 x 10 5 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Pre-Radiation
Parameter
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
ID
24.3A
Features:
Absolute Maximum Ratings
ID @ V GS = 12V, TC = 25°C
I D @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
RDS(on)
0.20Ω
To Order
IRHI7360SE
24.3
15.3
97.2
300
2.4
±20
500
24.3
30
4.0
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10 sec.)
10.9 (typical)
Units
A
W
W/K ➄
V
mJ
A
mJ
V/ns
oC
g
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IRHI7360SE Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min.
Typ. Max. Units
400
—
—
0.45
—
—
—
—
2.5
4.75
—
—
—
—
—
—
—
—
0.20
0.21
4.5
—
50
250
V
V/°C
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
180
75
100
35
100
100
100
—
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7500
1200
500
—
—
—
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
nC
VGS = 12V, ID =15.3A
➃
VGS = 12V, I D = 24.3A
VDS = VGS, ID = 1.0 mA
VDS > 15V, IDS = 15.3A ➃
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, I D = 24.3 A
VDS = Max. Rating x 0.5
ns
VDD = 200V, ID = 24.3A,
RG = 2.35Ω
Ω
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nH
pF
Measured from the
Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to
internal inductances.
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
VSD
t rr
Q RR
t on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
24.3
97.2
A
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
Tj = 25°C, IS = 24.3A, V GS = 0V ➃
Tj = 25°C, IF = 24.3A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
—
—
—
—
—
—
1.4
750
16
V
ns
µC
Thermal Resistance
Parameter
Min. Typ. Max. Units
RthJC
Junction-to-Case
—
RthJA
Junction-to-Ambient
—
RthCS
Case-to-Sink
—
30
0.21
To Order
Test Conditions
0.42
—
K/W➄
Typical socket mount
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IRHI7360SE Device
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
VDSS bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 105 Rads (Si)
are identical and are presented in Table 1, column
1, IRHI7360SE. The values in Table 1 will be met for
either of the two low dose rate test circuits that are
used.
Table 1. Low Dose Rate ➅ ➆
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
100K Rads (Si)
min.
VSD
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
IRHI7360SE
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105
Rads (Si), no change in limits are specified in DC
parameters.
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage ➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance One
Diode Forward Voltage ➃
Units
Test Conditions ➉
max.
400
2.0
—
—
—
—
—
4.5
100
-100
50
0.20
nA
—
1.35
V
V
µA
Ω
VGS = 0V, I D = 1.0 mA
VGS = VDS , ID = 1.0 mA
VGS = 20V
VGS = -20V
VDS = 0.8 x Max Rating, VGS = 0V
VGS = 12V, ID = 15.3A
TC = 25°C, IS = 24.3A,VGS = 0V
Table 2. High Dose Rate ➇
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
VDSS
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
—
— 320 —
—
320
V
Applied drain-to-source voltage
during gamma-dot
— 6.4 —
— 6.4
—
A
Peak radiation induced photo-current
—
— 16
—
—
2.3 A/µsec Rate of rise of photo-current
20
—
— 137 —
—
µH
Circuit inductance required to limit di/dt
Drain-to-Source Voltage
IPP
di/dt
L1
Table 3. Single Event Effects ➈
Parameter
Typ.
Units
Ion
LET (Si)
(MeV/mg/cm2)
Fluence
(ions/cm2)
Range
(µm)
VDS Bias
(V)
VGS Bias
(V)
BV DSS
400
V
Ni
28
1 x 105
~35
320
-5
To Order
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IRHI7360SE Device
➀ Repetitive Rating; Pulse width limited by
➁
➂
➃
➄
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL2) * [BV DSS/(BV DSS-VDD)]
Peak IL = 24.3A, VGS = 12V, 25 ≤ RG ≤ 200Ω
ISD ≤ 24.3A, di/dt ≤ 170 A/µs,
VDD ≤ BV DSS, TJ ≤ 150°C
Suggested RG = 2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
Radiation Characteristics
➅ Total Dose Irradiation with VGS Bias.
➆
➇
➈
➉
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and V GS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — TO-259AA
Legend
1 - Drain
2 - Source
3 - Gate
Notes:
1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. All dimensions are show in millimeters (inches).
Conforms to JEDEC Outline TO-259AA
Dimensions in Millimeters and (Inches)
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxides packages shall not be placed in acids that will produce
fumes containing beryllium.
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IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
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http://www.irf.com/
Data and specifications subject to change without notice.
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