ON MMUN2211LT3G Bias resistor transistor npn silicon surface mount transistor Datasheet

MMUN2211LT1G Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT-23 package which is designed for low power surface mount
applications.
http://onsemi.com
PIN 3
COLLECTOR
(OUTPUT)
R1
PIN 1
BASE
(INPUT)
R2
PIN 2
EMITTER
(GROUND)
Features
• Simplifies Circuit Design
• Reduces Board Space and Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
MARKING DIAGRAM
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
246 (Note 1)
400 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
°C/W
Thermal Resistance, Junction-to-Ambient
RqJA
508 (Note 1)
311 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead
RqJL
174 (Note 1)
208 (Note 2)
°C/W
Junction and Storage Temperature
Range
TJ, Tstg
−55 to +150
°C
SOT−23
CASE 318
STYLE 6
A8x M G
G
1
A8x = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 17 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad
2. FR−4 @ 1.0 x 1.0 inch pad
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 11
Publication Order Number:
MMUN2211LT1/D
MMUN2211LT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
4.0
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3), (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
350
350
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2211LT1G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2233LT1G
MMUN2234LT1G
MMUN2238LT1G
MMUN2241LT1G
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 1 mA)
(IC = 10 mA, IB = 5 mA)
MMUN2211LT1G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2233LT1G
MMUN2234LT1G
MMUN2238LT1G
MMUN2241LT1G
MMUN2211LT1G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2233LT1G
MMUN2234LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2232LT1G
MMUN2238LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2241LT1G
VCE(sat)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
http://onsemi.com
2
Vdc
MMUN2211LT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.88
130
R1/R2
0.8
0.8
0.8
0.17
−
−
0.8
0.8
0.8
0.055
0.38
−
−
1.0
1.0
1.0
0.21
−
−
1.0
1.0
1.0
0.1
0.47
−
−
1.2
1.2
1.2
0.25
−
−
1.2
1.2
1.2
0.185
0.56
−
−
Unit
ON CHARACTERISTICS (Note 4)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
Resistor Ratio
MMUN2211LT1G
MMUN2212LT1G
MMUN2214LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2233LT1G
MMUN2234LT1G
MMUN2238LT1G
MMUN2213LT1G
MMUN2241LT1G
MMUN2211LT1G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2233LT1G
MMUN2230LT1G
MMUN2234LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2238LT1G
MMUN2241LT1G
MMUN2211LT1G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2233LT1G
MMUN2234LT1G
MMUN2238LT1G
MMUN2241LT1G
MMUN2211LT1G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2233LT1G
MMUN2234LT1G
MMUN2238LT1G
MMUN2241LT1G
VOL
VOH
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
http://onsemi.com
3
Vdc
Vdc
kW
MMUN2211LT1G Series
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
250
200
1
IC/IB = 10
TA = −25°C
25°C
75°C
0.1
150
100
0.01
RqJA= 625°C/W
50
0
−50
0
50
100
0.001
150
0
40
60
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
Figure 2. VCE(sat) vs. IC
VCE = 10 V
TA = 75°C
25°C
−25°C
100
10
1
10
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 A
TA = 25°C
3
2
1
0
100
0
10
10
20
30
50
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capcitance
10
25°C
75°C
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
TA = −25°C
1
0.1
0.01
0.001
80
4
1000
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
20
TA, AMBIENT TEMPERATURE (5°C)
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
PD, POWER DISSIPATION (MILLIWATTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2211LT1G
TA = −25°C
25°C
75°C
1
VO = 5 V
0
1
2
3
4
5
6
7
8
9
0.1
0
10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current vs. Input Voltage
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
http://onsemi.com
4
50
MMUN2211LT1G Series
−
1000
1
TA = −25°C
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2212LT1G
25°C
75°C
0.1
0.01
0.001
0
20
60
40
IC, COLLECTOR CURRENT (mA)
80
VCE = 10 V
TA = 75°C
10
10
IC, COLLECTOR CURRENT (mA)
1
Figure 7. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 A
TA = 25°C
1
0
10
20
30
50
40
75°C
25°C
TA = −25°C
10
1
0.1
0.01
0.001
VO = 5 V
0
2
4
6
8
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
100
2
0
TA = −25°C
10
75°C
25°C
1
0.1
0
100
Figure 8. DC Current Gain
4
3
−25°C
25°C
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
http://onsemi.com
5
50
10
MMUN2211LT1G Series
10
IC/IB = 10
TA = −25°C
75°C
25°C
1
0.1
0.01
0
20
40
60
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2213LT1G
TA = 75°C
25°C
−25°C
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) vs. IC
Figure 13. DC Current Gain
100
0.8
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 A
TA = 25°C
0.6
0.4
0.2
10
20
30
25°C
10
TA = −25°C
1
0.1
0.01
0.001
50
40
75°C
VO = 5 V
0
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current vs. Input Voltage
100
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
VCE = 10 V
IC, COLLECTOR CURRENT (mA)
1
0
0
1000
TA = −25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
http://onsemi.com
6
50
10
MMUN2211LT1G Series
1
IC/IB = 10
TA = −25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(V)
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2214LT1G
300
TA = 75°C
VCE = 10
250
25°C
200
−25°C
150
100
50
0
1
2
4
6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) vs. IC
Figure 18. DC Current Gain
100
4
2.5
2
1.5
1
0.5
0
0
2
4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
10
VO = 5 V
1
0
2
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
Figure 20. Output Current vs. Input Voltage
Figure 19. Output Capacitance
10
TA = −25°C
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 A
TA = 25°C
3.5
25°C
75°C
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage vs. Output Current
http://onsemi.com
7
50
10
MMUN2211LT1G Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
75°C
10
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 24. Output Capacitance
25°C
1
TA = −25°C
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
9
10
Figure 25. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 23. DC Current Gain
4.5
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2215LT1G
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
http://onsemi.com
8
50
MMUN2211LT1G Series
1
1000
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
25°C
100
10
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
100
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 29. Output Capacitance
75°C
10
25°C
TA = −25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 30. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
100
Figure 28. DC Current Gain
4.5
4
VCE = 10 V
75°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2216LT1G
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
http://onsemi.com
9
50
MMUN2211LT1G Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2230LT1G
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
25°C
TA = −25°C
VCE = 10 V
1
50
75°C
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 34. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 35. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
4
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
http://onsemi.com
10
50
MMUN2211LT1G Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2231LT1G
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
TA = −25°C
VCE = 10 V
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 37. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 39. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 40. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 38. DC Current Gain
4.5
0
25°C
75°C
10
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 41. Input Voltage versus Output Current
http://onsemi.com
11
50
MMUN2211LT1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2232LT1G
1000
IC/IB =10
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (V)
1
TA = 75°C
0.1
25°C
−25°C
0.01
0.001
4
8
12
16
20
24
VCE = 10 V
TA = 75°C
100
10
1
28
0
25
IC, COLLECTOR CURRENT (mA)
75
100
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 A
TA = 25°C
5
4
3
2
1
10
20
30
40
50
60
VO = 5 V
75°C
25°C
10
1
TA = −25°C
0.1
0.01
0
2
4
6
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 44. Output Capacitance
Figure 45. Output Current vs. Input Voltage
10
Vin, INPUT VOLTAGE (V)
0
125
Figure 43. DC Current Gain
6
Cob, CAPACITANCE (pF)
50
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) vs. IC
0
25°C
−25°C
VO = 0.2 V
TA = −25°C
75°C
1
0.1
0
25°C
10
20
IC, COLLECTOR CURRENT (mA)
Figure 46. Output Voltage vs. Input Current
http://onsemi.com
12
30
8
MMUN2211LT1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2233LT1G
1000
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (V)
1
25°C
TA = −25°C
TA = −25°C
10
VCE = 10 V
0.001
2
7
12
17
27
22
1
32
100
10
IC, COLLECTOR CURRENT (mA)
Figure 47. VCE(sat) vs. IC
Figure 48. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 A
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
10
20
30
40
50
60
75°C
TA = −25°C
10
1
0.1
0.01
25°C
0
VO = 5 V
2
4
6
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 49. Output Capacitance
Figure 50. Output Current vs. Input Voltage
10
Vin, INPUT VOLTAGE (V)
0
1
IC, COLLECTOR CURRENT (mA)
4
Cob, CAPACITANCE (pF)
25°C
100
75°C
0.01
75°C
VO = 0.2 V
TA = −25°C
25°C
75°C
1
0.1
0
6
24
12
18
IC, COLLECTOR CURRENT (mA)
Figure 51. Input Voltage vs. Output Current
http://onsemi.com
13
30
8
MMUN2211LT1G Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
75°C
−25°C
0.01
0.001
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2234LT1G
0
5
25°C
10
15
25
20
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
100
IC, COLLECTOR CURRENT (mA)
Figure 53. DC Current Gain
TBD
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 52. VCE(sat) versus IC
TBD
25°C
10
1
30
TA = −25°C
TBD
IC, COLLECTOR CURRENT (mA)
Figure 56. Input Voltage versus Output Current
http://onsemi.com
14
MMUN2211LT1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2238LT1G
1000
75°C
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (V)
1
75°C
25°C
TA = −25°C
0.01
25°C
10
VCE = 10 V
0.001
0
20
40
60
100
80
1
10
Figure 57. VCE(sat) vs. IC
Figure 58. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 1 Mhz
TA = 25°C
3
2.5
2
1.5
1
0.5
10
30
20
40
10
25°C
1
TA = −25°C
0.1
0.01
50
75°C
VO = 5 V
0
1
2
3
4
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 59. Output Capacitance
Figure 60. Output Current vs. Input Voltage
10
Vin, INPUT VOLTAGE (V)
0
100
IC, COLLECTOR CURRENT (mA)
3.5
0
1
IC, COLLECTOR CURRENT (mA)
4
Cob, CAPACITANCE (pF)
TA = −25°C
100
VO = 0.2 V
1
25°C
TA = −25°C
75°C
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 61. Input Voltage vs. Output Current
http://onsemi.com
15
50
5
MMUN2211LT1G Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 62. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 63. Open Collector Inverter: Inverts
the Input Signal
Figure 64. Inexpensive, Unregulated
Current Source
http://onsemi.com
16
MMUN2211LT1G Series
ORDERING INFORMATION
Device
Marking
MMUN2211LT1G
MMUN2211LT3G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2233LT1G
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
MMUN2234LT1G
MMUN2234LT3G
A8L
R1(k)
R2(k)
Package
Shipping†
10
10
SOT−23
(Pb−Free)
3000 / Tape & Reel
10
10
SOT−23
(Pb−Free)
10,000 / Tape & Reel
22
22
SOT−23
(Pb−Free)
47
47
SOT−23
(Pb−Free)
10
47
SOT−23
(Pb−Free)
10
∞
SOT−23
(Pb−Free)
4.7
∞
SOT−23
(Pb−Free)
1.0
1.0
SOT−23
(Pb−Free)
2.2
2.2
SOT−23
(Pb−Free)
4.7
4.7
SOT−23
(Pb−Free)
4.7
47
SOT−23
(Pb−Free)
22
47
SOT−23
(Pb−Free)
22
47
SOT−23
(Pb−Free)
MMUN2238LT1G
A8R
2.2
∞
SOT−23
(Pb−Free)
MMUN2241LT1G
A8U
100
∞
SOT−23
(Pb−Free)
3000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
17
MMUN2211LT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
18
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MMUN2211LT1/D
Similar pages