Eudyna FLL300IL-1 L-band medium & high power gaas fet Datasheet

FLL300IL-1, FLL300IL-2, FLL300IL-3
L-Band Medium & High Power GaAs FET
FEATURES
•
•
•
•
•
High Output Power: P1dB = 44.5dBm (Typ.)
High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2)
High PAE: ηadd = 44% (Typ.)
Proven Reliability
Hermetically Sealed Package
DESCRIPTION
The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are
specifically designed to provide high power at L-Band frequencies with
gain, linearity and efficiency superior to that of silicon devices. The
performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
100
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 80.4 and -17.4 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Symbol
IDSS
gm
Vp
Test Conditions*
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 7200mA
VDS = 5V, IDS = 720mA
Drain Current
Power added Efficiency
Thermal Resistance
Channel Temperature Rise
ηadd
Rth
∆Tch
A
mS
V
-5
-
-
V
43.0
44.5
-
dBm
f=900MHz
11.0
13.0
-
dB
f=1.8GHz
10.0
12.0
-
dB
f=2.6GHz
8.0
-
10.0
6.0
-
dB
A
Channel to Case
-
44
1.1
1.5
%
°C/W
(10V x Idsr - Pout + Pin) x Rth
-
-
80
°C
f=900MHz
f=1.8GHz
f=2.6GHz
VDS = 10V
IDS = 0.5 IDSS (Typ.)
8.0
-
G.C.P.: Gain Compression Point
* Under fixed VGS bias condition
Edition 1.2
July 1999
Unit
-3.5
CASE STYLE: IL
-1.0
Limit
Typ. Max.
12
16
6000
-2.0
Gate Source Breakdown Voltage VGSO IGS = -720µA
FLL300IL-1
Output Power
FLL300IL-2
P1dB
at 1dB G.C.P.
VDS = 10V
FLL300IL-3
IDS = 0.5 IDSS
FLL300IL-1
(Typ.)
Power Gain
FLL300IL-2
G1dB
at 1dB G.C.P.
FLL300IL-3
Idsr
Min.
-
1
FLL300IL-1, FLL300IL-2, FLL300IL-3
L-Band Medium & High Power GaAs FET
Total Power Dissipation (W)
POWER DERATING CURVE
120
100
80
60
40
20
0
50
100
150
200
Case Temperature (°C)
Drain Current (A)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
12
VGS =0V
9
-0.5V
-1.0V
6
3
-1.5V
-2.0V
0
2
4
6
8
10
Drain-Source Voltage (V)
2
FLL300IL-1
L-Band Medium & High Power GaAs FET
S11
S22
+j50
S21
S12
+90°
+j100
+j25
0.5GHz
1.5GHz
+j250
+j10
1.0
1.5GHz
1.0
1.3
1.0
0.5GHz
10
25
100
50Ω
180°
250
-j10
1.0
0.5GHz
1
SCALE FOR |S21|
-j250
.01
.02
-j25
-j100
-90°
-j50
ANG
.961
.957
.956
.955
.948
.943
.933
.923
.910
.898
.875
176.7
174.7
172.5
170.6
168.2
166.0
161.9
158.8
155.1
151.0
145.8
1.318
1.162
1.053
.989
.951
.944
.952
.975
1.021
1.094
1.182
70.0
64.9
59.9
55.1
49.6
44.5
37.9
31.7
24.7
16.8
8.4
.005
.005
.006
.007
.008
.009
.010
.012
.015
.017
.023
26.1
26.6
33.0
32.2
28.6
25.7
32.6
25.2
23.1
19.7
15.1
S22
MAG
ANG
.889
.884
.880
.871
.865
.855
.841
.828
.810
.789
.760
174.0
173.0
171.7
170.5
169.5
167.7
167.0
165.1
163.3
161.1
158.9
Download S-Parameters, click here
OUTPUT POWER vs. INPUT POWER
46
VDS=10V
IDS ≈ 0.5 IDSS
f = 0.9 GHz
44
42
Pout
40
38
60
45
ηadd
30
15
36
23 25 27 29 31 33
Input Power (dBm)
3
0
ηadd (%)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
S-PARAMETERS
VDS = 10V, IDS = 6000mA
S21
S12
MAG
ANG
MAG
ANG
S11
MAG
Output Power (dBm)
FREQUENCY
(MHZ)
1.5GHz
1.5GHz
SCALE FOR |S12|
0
2
0°
FLL300IL-2
L-Band Medium & High Power GaAs FET
S11
S22
+j50
S21
S12
+90°C
+j100
+j25
2.6
2.2
2.0
+j101.4
1.2
2.4
2.4
+j250
2.4 1.8
1.6
1.8 2.2
1.6
1.2
2.0
10
0
50Ω
2.8
100
2.8
2.6
2.8
25
2.6
2.2
2.6
5
250
4
3
1.2
2 2.4 1
±180° SCALE FOR |S |
21
2.0
3.0
2.2
-j250
2.0
3.0
-j25
-j100
-j50
ANG
.953
.944
.933
.923
.903
.864
.788
.654
.506
.522
.652
.716
.746
.771
.763
.722
.626
.508
.544
.686
.791
167.2
164.6
161.0
157.3
153.3
148.3
142.2
137.8
144.5
161.1
162.2
154.3
150.0
139.4
125.1
106.2
75.9
23.4
-45.8
-94.8
-123.6
.788
.811
.882
.997
1.169
1.419
1.752
2.179
2.526
2.523
2.249
1.946
1.984
1.902
1.887
1.935
1.998
1.932
1.613
1.136
.726
34.0
28.0
21.5
14.0
5.3
-6.9
-23.0
-45.3
-74.2
-104.9
-131.4
-149.5
-167.8
171.9
152.6
133.4
106.5
73.3
36.7
3.4
-22.0
.003
.005
.006
.007
.008
.010
.014
.018
.023
.024
.022
.021
.023
.022
.023
.025
.027
.026
.021
.016
.010
44
VDS=10V
IDS ≈ 0.5 IDSS
f = 1.8 GHz
Pout
42
60
40
45
38
ηadd
36
30
15
24 26 28 30 32 34
Input Power (dBm)
4
0
0°
2.8
1.8
0.1
0.2
S22
MAG
.869
.864
.859
.857
.850
.853
.868
.889
.923
.907
.852
.789
.730
.644
.555
.460
.323
.161
.031
.210
.370
ANG
169.9
169.0
167.9
166.2
165.2
164.7
162.7
160.0
155.3
148.1
141.8
136.7
130.5
124.2
117.9
113.5
103.1
89.3
-62.8
-105.9
-118.5
Download S-Parameters, click here
OUTPUT POWER vs. INPUT POWER
46
3.0
1.4
1.6
-90°C
-32.3
-31.6
-50.9
-50.6
-60.5
-71.2
-86.6
-109.7
-136.9
-167.7
165.4
148.1
129.7
110.3
91.3
71.1
41.9
9.1
-25.1
-63.2
-90.8
ηadd (%)
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
S-PARAMETERS
VDS = 10V, IDS = 6000mA
S21
S12
MAG
ANG
MAG
ANG
S11
MAG
Output Power (dBm)
FREQUENCY
(MHZ)
SCALE FOR |S12|
1.8
3.0
-j10
1.6
1.2
FLL300IL-3
L-Band Medium & High Power GaAs FET
S11
S22
+j50
+j100
+j25 1.5GHz
.04
.03
+j250
2.0
.02
2.5
1.5GHz
3.0
10
0
25
.01
50Ω
100
250
180°
3.0
3.5
4
2.5
3
2
1
SCALE FOR |S21|
3.5
3.5
SCALE FOR |S12|
2.5
2.5
+j10
S21
S12
+90°
3.0
1.5
3.0
0°
1.5
2.0
-j10
-j250
3.5
2.0
-j25
-j100
-j50
S21
S12
ANG
MAG
ANG
MAG
.902
.872
.829
.756
.645
.463
.217
.065
.285
.441
.523
.560
.583
.578
.564
.564
.605
.731
.813
.864
.895
130.6
123.3
114.2
102.9
88.8
71.7
54.5
173.9
175.2
157.4
137.6
119.7
99.3
72.8
37.9
-4.7
-44.2
-80.2
-109.5
-131.0
-147.1
1.169
1.324
1.539
1.824
2.199
2.604
2.939
3.080
3.055
2.938
2.843
2.768
2.791
2.840
2.854
2.789
2.536
1.981
1.502
1.130
.853
-3.1
-13.4
-25.8
-40.5
-57.7
-78.8
-103.5
-129.4
-153.9
-176.2
166.5
146.9
126.7
104.2
79.1
51.3
20.3
-9.0
-32.7
-52.7
-69.8
.009
.010
.012
.016
.019
.024
.028
.031
.032
.032
.032
.033
.035
.036
.039
.039
.039
.031
.023
.019
.013
S22
ANG
-55.7
-69.8
-81.5
-96.1
-113.4
-134.7
-160.3
173.7
150.2
128.8
110.8
91.6
72.2
49.8
28.0
0.5
-33.2
-63.6
-88.0
-106.9
-121.2
OUTPUT POWER vs. INPUT POWER
46
VDS=10V
IDS ≈ 0.5 IDSS
f = 2.6 GHz
44
Pout
42
60
40
45
30
38
36
ηadd
15
0
26 28 30 32 34 36
Input Power (dBm)
5
MAG
.854
.852
.847
.847
.854
.860
.867
.848
.808
.752
.700
.628
.550
.461
.348
.208
.081
.132
.253
.345
.408
ANG
155.0
153.2
150.7
148.5
146.1
142.2
137.4
131.6
125.3
119.7
119.6
113.6
109.0
102.5
94.4
91.8
125.9
-167.4
-158.6
-162.2
-168.1
Download S-Parameters, click here
ηadd (%)
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
S11
MAG
Output Power (dBm)
FREQUENCY
(MHZ)
-90°
S-PARAMETERS
VDS = 10V, IDS = 6000mA
FLL300IL-1, FLL300IL-2, FLL300IL-3
L-Band Medium & High Power GaAs FET
2.0 Min.
(0.079)
Case Style "IL"
Metal-Ceramic Hermetic Package
0.1
(0.004)
17.4±0.25
(0.685)
8.0±0.15
(0.315)
1
2
4
3
2.4±0.15
(0.094)
2.0 Min.
(0.079)
4-R 1.3±0.15
(0.051)
1.0
(0.039)
5.5 Max.
(0.217)
1.9
(0.075)
16.4
(0.646)
20.4±0.2
(0.803)
24±0.2
(0.945)
1.
2.
3.
4.
Gate
Source (Flange)
Drain
Source (Flange)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
6
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