MCC BC548B-AP Npn silicon amplifier transistor 625mw Datasheet

MCC
BC546B
BC547A/B/C
BC548A/B/C
omponents
20736 Marilla Street Chatsworth
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TM
Micro Commercial Components
Features
NPN Silicon
Through Hole Package
150oC Junction Temperature
x
x
•
Amplifier Transistor
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL rating 1
Marking:Type Number
625mW
Lead Free Finish/Rohs Compliant) ("P"Suffix designates
Compliant. See ordering information)
TO-92
A
Mechanical Data
E
Case: TO-92, Molded Plastic
Polarity: indicated as below.
B
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
BC546
BC547
BC548
BC546
BC547
BC548
Emitter-Base Voltage
Symbol Value
65
VCEO
45
30
80
VCBO
50
30
VEBO
6.0
Collector Current(DC)
IC
Power Dissipation@TA=25oC
Pd
Power Dissipation@TC=25oC
Pd
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Case
Operating & Storage Temperature
Unit
V
D
V
100
625
5.0
1.5
12
mA
mW
mW/oC
W
mW/oC
RqJA
200
o
RqJC
83.3
o
Tj, TSTG -55~150
C
V
C/W
C/W
o
C
1
2
3
1-Collector
2-Base
3-Emitter
G
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.010
MAX
.190
.190
.590
.020
.160
.104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
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1 of 5
2008/11/05
MCC
BC546 thru BC548C
TM
Micro Commercial Components
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
BC546
BC547
BC548
V(BR)CEO
65
45
30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(IC = 100 µAdc)
BC546
BC547
BC548
V(BR)CBO
80
50
30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(IE = 10 mA, IC = 0)
BC546
BC547
BC548
V(BR)EBO
6.0
6.0
6.0
—
—
—
—
—
—
V
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
hFE
—
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
90
150
270
—
—
—
(IC = 2.0 mA, VCE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
110
200
420
180
290
520
220
450
800
(IC = 100 mA, VCE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
120
180
300
—
—
—
—
---
0.3
—
—
1.0
0.55
—
—
—
0.7
0.77
150
150
150
300
300
300
—
—
—
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
Base–Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
BC546
BC547
BC548
MHz
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cobo
—
1.7
4.5
pF
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cibo
—
10
—
pF
Small–Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
hfe
BC547A/548A
BC546B/547B/548B
BC547C/548C
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW,
f = 1.0 kHz, ∆f = 200 Hz)
—
125
240
450
220
330
600
260
500
900
—
—
—
2.0
2.0
2.0
10
10
10
NF
BC546
BC547
BC548
dB
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2 of 5
Revision: 7
2008/11/05
MCC
BC546 thru BC548C
TA = 25°C
0.9
0.8
1.0
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
VCE = 10 V
TA = 25°C
1.5
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
0.7
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
Figure 1. Normalized DC Current Gain
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
0.8
IC = 50 mA
IC = 100 mA
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
50 70 100
Figure 2. “Saturation” and “On” Voltages
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
Micro Commercial Components
1.0
2.0
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 3. Collector Saturation Region
100
Figure 4. Base–Emitter Temperature Coefficient
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
fă,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
BC547/BC548
400
300
200
VCE = 10 V
TA = 25°C
100
80
Figure 5. Capacitances
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 6. Current–Gain – Bandwidth Product
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Revision: 7
2008/11/05
TM
MCC
BC546 thru BC548C
Micro Commercial Components
BC547/BC548
TA = 25°C
VCE = 5 V
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1.0
2.0
1.0
0.5
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0.1 0.2
0.2
0.5
1.0
2.0
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
50
100
200
50
100
200
Figure 8. “On” Voltage
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
5.0
10
20
-1.0
-1.4
-1.8
θVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
Figure 9. Collector Saturation Region
0.2
0.5
10 20
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
BC546
fă,
T CURRENT-GAIN - BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
0.5
1.0 2.0
10 20
5.0
VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 11. Capacitance
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
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Revision: 7
4 of 5
2008/11/05
TM
MCC
TM
Micro Commercial Components
Ordering Information
Device
Packing
(Part Number)-AP
Ammo Packing;2Kpcs/AmmoBox
(Part Number)-BP
Bulk;1Kpcs/Bag
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***APPLICATIONS DISCLAIMER***
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Aerospace or Military Applications.
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