NTE NTE5460 Silicon controlled rectifier (scr) Datasheet

NTE5460
Silicon Controlled Rectifier (SCR)
Description:
The NTE5460 is designed primarily for half–wave AC control applications such as motor controls,
heating controls, and power supply crowbar circuits.
Features:
D Glass Passivated Junction with Center Gate Fire for Greater Parameter Uniformity and Stability
D Small, Rugged Construction for Low Thermal Resistance, High Heat Dissipation, and Durability
D 300A Surge Current Capability
D Insulated Package Simplifies Mounting
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, Note 1), VDRM . . . . . . . . . . . . . . . . . . 800V
Repetitive Peak Reverse Voltage (TJ = –40° to +125°C, Note 1), VRRM . . . . . . . . . . . . . . . . . . . 800V
On–State RMS Current (TC = +70°C, Full Cycle Sine Wave 50 to 60Hz, Note 2), IT(RMS) . . . . . 25A
Peak Non–Repetitive Surge Current, ITSM
(One Full Cycle, 60Hz, TC = +70°C, Preceeded and Followed by Rated Current) . . . . 300A
Circuit Fusing (t = 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375A2s
Peak Gate Power (TC = +70°C, Pulse Width = 10µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power (TC = +70°C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current (TC = +70°C, Pulse Width = 10µs), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
RMS Isolation Voltage (TA = +25°C, Relative Humidity ≤ 20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Typical Thermal Resistance, Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 2. The case temperature reference point for all TC measurements is a point on the center lead
of the package as close as possible to the plastic body.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Peak Forward Blocking Current
IDRM
Test Conditions
Min
Typ
Max
Unit
VDRM = 800V, TJ = +25°C
–
–
10
µA
VDRM = 800V, TJ = +125°C
–
–
2
mA
Peak Reverse Blocking Current
IRRM
VRRM = 800V, TJ = +125°C
–
–
2
mA
Forward “ON” Voltage
VTM
ITM = 50A, Note 3
–
–
1.8
V
DC Gate Trigger Current
IGT
Anode Voltage = 12V, RL = 100Ω
–
–
40
mA
DC Gate Trigger Voltage
VGT
Anode Voltage = 12V, RL = 100Ω
–
0.8
1.5
V
Gate Non–Trigger Voltage
VGD
Anode Voltage = 800V, RL = 100Ω, TJ = +125°C
0.2
–
–
V
Holding Current
IH
Anode Voltage = 12V
–
20
40
mA
Turn–On Time
tgt
ITM = 25A, IGT = 40mA
–
1.5
–
µs
Turn–Off Time
tq
VDRM = 800V, ITM = 25A, IR = 25A
–
15
–
µs
VDRM = 800V, ITM = 25A, IR = 25A, TJ = +125°C
–
35
–
µs
Gate Open, VDRM = 800V, Exponential Waveform
–
100
–
V/µs
Critical Rate of Rise of
Off–State Voltage
dv/dt
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.114 (2.9) Max
.122 (3.1)
Dia
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
K
A
G
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
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