AOSMD AO4724 30v n-channel mosfet Datasheet

AO4724
30V N-Channel MOSFET
SRFET
General Description
Product Summary
SRFET TM The AO4724 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low
side FET in SMPS, load switching and general
purpose applications.
VDS (V) = 30V
ID = 10.5A
(VGS = 10V)
RDS(ON) < 17.5mΩ (VGS = 10V)
RDS(ON) < 29 mΩ (VGS = 4.5V)
TM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
Bottom View
D
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=70°C
ID
B
7.7
8.5
6.2
Avalanche Current B
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF t ≤ 10s
Maximum Junction-to-Ambient A Steady-State
Maximum Junction-to-Lead C
3.1
1.7
2.0
1.1
IAR
B
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
80
PD
TA=70°C
Units
V
V
10.5
IDM
TA=25°C
Power Dissipation
Maximum
10 Sec
Steady State
30
±20
TA=25°C
Continuous Drain
Current AF
Pulsed Drain Current
Symbol
EAR
TJ, TSTG
Symbol
RθJA
RθJL
Typ
31
59
16
W
13
A
25
mJ
-55 to 150
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4724
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
V
VGS=10V, VDS=5V
80
TJ=55°C
VGS=10V, ID=10.5A
TJ=125°C
VGS=4.5V, ID=8A
20
100
nA
2
V
14.4
17.5
21.5
25.8
22.7
29.0
mΩ
0.5
V
4.8
A
A
Forward Transconductance
VDS=5V, ID=10.5A
23
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.4
IS
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
696
VGS=0V, VDS=15V, f=1MHz
mA
1.64
gFS
Coss
Units
0.1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
900
pF
199
pF
81
pF
1.2
1.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12.4
16
nC
Qg(4.5V) Total Gate Charge
6.1
8
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=10.5A
2.04
nC
2.7
nC
2.6
ns
VGS=10V, VDS=15V, RL=1.43Ω,
RGEN=3Ω
6.8
ns
17
ns
IF=10.5A, dI/dt=300A/µs
20.2
Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=300A/µs
7.9
3.6
ns
26
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev2: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4724
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
80
10V
VDS=5V
5V
24
8V
60
6V
18
ID(A)
ID (A)
4.5V
40
12
4V
3.5V
20
125°C
6
VGS=3V
25°C
0
0
0
1
2
3
4
5
0
1
VDS (Volts)
Fig 1: On-Region Characteristics
Normalized On-Resistance
RDS(ON) (mΩ )
800
140
80
ID=10.5A
0.5
1.8
VGS=4.5V
22
18
14
VGS=10V
10
4
5
1.6
220
140
VGS=10V
15
7
1.4
VGS=4.5V
1.2
1
0.8
0
6
12
18
24
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
54
1.0E+01
ID=10.5A
46
1.0E+00
125°C
1.0E-01
38
125°C
30
IS (A)
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
30
26
2
1.0E-02
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
1.0E-03MARKET. APPLICATIONS OR USES AS CRITICAL
22
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1.0E-04THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
14
25°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
1.0E-05
6
0.0
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
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AO4724
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=15V
ID=10.5A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
800
600
400
Coss
200
0
Crss
0
0
3
6
9
12
15
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
800
140
80
0.5
50
RDS(ON)
limited
Power (W)
ID (Amps)
10.0
100µs
0.1s
1.0
TJ(Max)=150°C
TA=25°C
1s
1ms
30
220
140
TJ(Max)=150°C
TA=25°C
40
10µs
10ms
10
15
7
30
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
PD NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Single Pulse
0.01
0.00001
0.0001
0.001
Ton
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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