NTE NTE214 Silicon npn transistor darlington driver Datasheet

NTE214
Silicon NPN Transistor
Darlington Driver
Description:
The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
Features:
D High DC Current Gain
D Large Current Capacity and Wide ASO
D Low Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 40V, IE = 0
–
–
0.1
mA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
3.0
mA
DC Current Gain
hFE
VCE = 2V, IC = 5A
2000
5000
–
fT
VCE = 5V, IC = 5A
–
20
–
MHz
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 5A, IB = 10mA
–
0.9
1.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 5A, IB = 10mA
–
–
2.0
V
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 5mA, IE = 0
70
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 50mA, RBE = ∞
60
–
–
V
–
0.6
–
µs
–
3.0
–
µs
–
1.8
–
µs
Current Gain–Bandwidth Product
Turn–On Time
ton
Storage Time
tstg
Fall Time
tf
VCC = 20V, VBE = –5V,
500IB1 = –500IB2 = IC = 5A,
PW = 50µs, Duty Cycle ≤ 1%
Schematic Diagram
C
B
E
.190 (4.82)
.615 (15.62)
C
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)
Similar pages