Pan Jit BC817-40 Npn general purpose transistor Datasheet

DATA SHEET
BC817 SERIES
NPN GENERAL PURPOSE TRANSISTORS
POWER
45 Volts
VOLTAGE
SOT- 23
225 mWatts
Unit: inch (mm)
FEATURES
• General purpose amplifier applications
.103(2.60)
.056(1.40)
.047(1.20)
• Collector current I C = 500mA
• Pb free product are available : 99% Sn above can meet RoHS
environment substance directive request
.007(.20)MIN
.119(3.00)
.110(2.80)
MECHANICAL DATA
.083(2.10)
.066(1.70)
Case: SOT-23, Plastic
.086(2.20)
• NPN epitaxial silicon, planar design
.006(.15)
.002(.05)
.006(.15)MAX
Device Marking : BC817-16 : 8A
.020(.50)
.013(.35)
.044(1.10)
Approx. Weight: 0.008 gram
.035(0.90)
Terminals: Solderable per MIL-STD-750, Method 2026
BC817-25 : 8B
BC817-40 : 8C
3
COLLECTOR
Top View
3
Collector
1
BASE
1
Base
2
Emitter
2
EMITTER
MECHANICAL DATA
PARAMETER
SYMBOL
Value
UNIT
Collector-Emitter Voltage
V C EO
45
v
Collector-Base Voltage
V C BO
50
v
Emitter-Base Voltage
V EBO
5.0
v
IC
500
mA
Max Power Dissipation (Note 1)
PTOT
225
mW
Junction and Storage Temperature
Range
TJ , TSTG
-55 to 150
oC
Collector Current - Continuous
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Value
UNIT
Thermal Resistance , Junction to Ambient
RθJA
556
oC /W
Note 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in
STAD-JUL.13.2005
PAGE . 1
ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage (Ic=10mA, IB=0)
V(BR)CEO
45
-
-
V
Collector-Emitter Breakdown Voltage (VEB=0V, Ic=10uA
V(BR)CES
50
-
-
V
Emitter-Base Breakdown Voltage (IE=1.0uA,Ic=0)
V(BR)EBO
5.0
-
-
V
I EBO
-
-
100
nA
-
100
nA
I C BO
5.0
uA
250
400
600
-
Emitter-Base Cutoff Current (VEB=5V)
Collector-Base Cutoff Current (VCB=20V,IE=0)
O
T =150 C
J
DC Current Gain
(Ic=100mA,VCE=1V)
BC817-16
BC817-25
BC817-40
-
100
160
250
hFE
40
-
-
(Ic=500mA,VcE=1V)
Collector-Emitter Saturation Voltage (Ic=500mA ,I B=50mA)
VCE(SAT)
-
-
0.7
V
Base-Emitte Voltage (Ic=500mA,VCE=1.0V)
VBE(ON)
-
-
1.2
V
C C BO
-
5.0
-
pF
fT
100
-
-
MHz
Collector-Base Capacitance (VCB=10v,I E=0,f=1MHz)
Current Gain-Bandwidth Product (Ic=10mA,VcE=5V,f=100MHz)
ELECTRICAL CHARACTERISTICS CURVES
300
450
400
250
350
300
hFE
hFE
200
150
250
200
100
150
100
50
VCE = 1V
50
VCE = 1V
0
0
0.01
0.1
1
10
100
1000
0.01
0.1
Collector Current, IC (mA)
Fig. 1.
1
10
100
1000
Collector Current, IC (mA)
BC817-16 Typical hFE vs. IC
Fig. 2.
700
BC817-25 Typical hFE vs. IC
100
600
Capacitance, C (pF)
C IB (EB)
500
hFE
400
300
200
10
COB (EB)
100
VCE = 1V
1
0
0.01
0.1
1
10
100
Collector Current, I C (mA)
Fig. 3.
STAD-JUL.13.2005
BC817-40 Typical hFE vs. IC
1000
0.1
1
10
100
Reverse Voltage, VR (V)
Fig. 4. Typical Capacitances
PAGE . 2
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
STAD-JUL.13.2005
PAGE . 3
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