Hittite HMC625HFLP5E 0.5 db lsb gaas mmic 6-bit digital variable gain amplifier, 0.5 - 6 ghz Datasheet

HMC625HFLP5E
v00.0311
Variable Gain Amplifiers - Digital - SMT
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz
Typical Applications
Features
The HMC625HFLP5E is ideal for:
-13.5 to +18 Gain Control in 0.5 dB Steps
• Cellular/3G Infrastructure
Power-up State Selection
• WiBro / WiMAX / 4G
High Output IP3: +33 dBm
• Microwave Radio & VSAT
TTL/CMOS Compatible
Serial, Parallel, or latched Parallel Control
• Test Equipment and Sensors
±0.25 dB Typical Gain Step Error
• IF & RF Applications
Single +5V Supply
32 Lead 5 x 5 mm SMT Package: 25 mm2
Functional Diagram
General Description
The HMC625HFLP5E is a digitally controlled variable
gain amplifier which operates from 0.5 - 6 GHz, and
can be programmed to provide anywhere from 13.5
dB attenuation, to 18 dB of gain, in 0.5 dB steps. The
HMC625HFLP5E delivers noise figure of 6 dB in its
maximum gain state, with output IP3 of up to +33 dBm
in any state. The dual mode control interface is CMOS/
TTL compatible, and accepts either a three wire serial
input or a 6 bit parallel word. The HMC625HFLP5E also
features a user selectable power up state and a serial
output port for cascading other Hittite serial controlled
components. The HMC625HFLP5E is housed in a
RoHS compliant 5 x 5 mm QFN leadless package, and
requires no external matching components.
Electrical Specifications, TA = +25 °C, 50 Ohm System Vdd = +5V, Vs = +5V
Parameter
Min.
Frequency Range
Gain (Maximum Gain State)
13
Gain Control Range
Max.
Min.
Typ.
Max.
Min.
2700 - 4000
18
11
14
5
Typ.
Max.
Units
4000 - 6000
MHz
10
dB
31.5
31.5
31.5
dB
Input Return Loss
15
12
10
dB
Output Return Loss
12
12
14
dB
Gain Accuracy: (Referenced to Maximum Gain State)
All Gain States
± (0.3 + 3% of relative
gain setting) Max
± (0.3 + 3% of relative
gain setting) Max
± (0.4 + 5% of relative
gain setting) Max
dB
Output Power for 1 dB Compression
Output Third Order Intercept Point
(Two-Tone Output Power= 12 dBm Each Tone)
Noise Figure (Max Gain State)
16
14
11
Switching Characteristics
tRISE, tFall (10 / 90% RF)
Supply Current (Amplifier)
Supply Current (Controller) Idd
19
33
tON, tOFF (Latch Enable to 10 / 90% RF)
0-1
Typ.
500 - 2700
60
17
29
14
dBm
27
dBm
6
7
8
dB
30
60
30
60
30
60
ns
ns
86
0.12
100
0.25
60
86
0.12
100
0.25
60
86
0.12
100
0.25
mA
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC625HFLP5E
v00.0311
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz
Normalized Attenuation
Maximum Gain vs. Frequency
(Only Major States are Shown)
25
GAIN (dB)
20
15
10
+25 C
+85 C
-40 C
5
0
0.4
-10
-20
2.4
3.4
4.4
5.4
16dB
31.5dB
-30
-40
1.4
8dB
6.4
0.4
1.4
2.4
FREQUENCY (GHz)
Input Return Loss
5.4
6.4
5.4
6.4
(Only Major States are Shown)
0
0
0dB
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
4.4
Output Return Loss
(Only Major States are Shown)
-20
-30
-40
0.4
1.4
2.4
3.4
4.4
5.4
-10
-20
-30
-40
0.4
6.4
1.4
2.4
FREQUENCY (GHz)
3.4
4.4
FREQUENCY (GHz)
Bit Error vs. Frequency
Bit Error vs. Attenuation State
(Only Major States are Shown)
2
1.5
1
1
31.5dB
16dB
BIT ERROR (dB)
BIT ERROR (dB)
3.4
FREQUENCY (GHz)
0
0.5 GHz
0.5
0.7 GHz
Variable Gain Amplifiers - Digital - SMT
NORMAILIZED ATTENUATION (dB)
0
5.0 GHz
0
2.0 GHz
-0.5
4.0 GHz
-1
-1
-2
0.4
1.4
2.4
3.4
4.4
FREQUENCY (GHz)
5.4
6.4
-1.5
0
4
8
12
16
20
24
28
32
ATTENUATION STATE (dB)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
0-2
HMC625HFLP5E
v00.0311
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz
Normal Relative Phase vs. Frequency
Step Attenuation vs. Attenuation State,
0.5 - 3.5 GHz
(Only Major States are Shown)
1.5
STEP ATTENUATION (dB)
RELATIVE PHASE (DEG)
50
31.5dB
40
16dB
30
20
8dB
10
0
-20
0.4
1.4
2.4
3.4
4.4
5.4
0.5
0
-0.5
6.4
0
4
8
FREQUENCY (GHz)
Step Attenuation vs. Attenuation State,
4.0 - 6.0 GHz
1
20
P1dB (dBm)
25
0.5
-0.5
4
8
12
16
20
24
28
5
0.4
32
35
10
NOISE FIGURE (dB)
12
IP3 (dBm)
25
+25 C
+85 C
-40 C
1.4
2.4
3.4
1.4
2.4
3.4
4.4
FREQUENCY (GHz)
5.4
6.4
8
6
4
+25 C
+85 C
-40 C
2
4.4
32
Noise Figure
40
10
0.4
28
FREQUENCY (GHz)
Output IP3 vs. Temperature
15
24
+25 C
+85 C
-40 C
ATTENUATION STATE (dB)
20
20
15
10
4.0 GHz
5.0 GHz
6.0 GHz
0
16
Output P1dB vs. Temperature
1.5
0
12
ATTENUATION STATE (dB)
30
0-3
0.5 GHz
0.7 GHz
2.0 GHz
2.7 GHz
3.5 GHz
1
-10
STEP ATTENUATION (dB)
Variable Gain Amplifiers - Digital - SMT
60
5.4
6.4
0
0.4
1.4
2.4
3.4
4.4
5.4
6.4
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC625HFLP5E
v00.0311
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz
The HMC625HFLP5E contains a 3-wire SPI compatible digital interface (SERIN, CLK, LE). It is activated when P/S
is kept high. The 6-bit serial word must be loaded MSB first. The positive-edge sensitive CLK and LE requires
clean transitions. If mechanical switches were used, sufficient debouncing should be provided. When LE is high,
6-bit data in the serial input register is transferred to the attenuator. When LE is high CLK is masked to prevent data
transition during output loading.
When P/S is low, 3-wire SPI interface inputs (SERIN, CLK, LE) are disabled and serial input register is loaded
asynchronously with parallel digital inputs (D0 - D5). When LE is high, 6-bit parallel data is transferred to the attenuator.
For all modes of operations, the DVGA state will stay constant while LE is kept low.
Parameter
Typ.
Min. serial period, tSCK
100 ns
Control set-up time, tCS
20 ns
Control hold-time, tCH
20 ns
LE setup-time, tLN
10 ns
Min. LE pulse width, tLEW
10 ns
Min LE pulse spacing, tLES
630 ns
Serial clock hold-time from LE, tCKN
10 ns
Hold Time tPH
0 ns
Latch Enable Minimum width, tLEN
10 ns
Setup Time, tPS
2 ns
Timing Diagram (Latched Parallel Mode)
Variable Gain Amplifiers - Digital - SMT
Serial Control Interface
Parallel Mode (Direct Parallel Mode & Latched Parallel Mode)
Note: The parallel mode is enabled when P/S is set to low.
Direct Parallel Mode - The attenuation state is changed by the Control Voltage Inputs directly. The LE (Latch Enable)
must be at a logic high to control the attenuator in this manner.
Latched Parallel Mode - The attenuation state is selected using the Control Voltage Inputs and set while the LE is in
the Low state. The attenuator will not change state while LE is Low. Once all Control Voltage Inputs are at the desired
states the LE is pulsed. See timing diagram above for reference.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
0-4
HMC625HFLP5E
v00.0311
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz
PUP Truth Table
Variable Gain Amplifiers - Digital - SMT
Power-Up States
If LE is set to logic LOW at power-up, the logic state of
PUP1 and PUP2 determines the power-up state of the
part per PUP truth table. If the LE is set to logic HIGH
at power-up, the logic state of D0-D5 determines the
power-up state of the part per truth table. The DVGA
latches in the desired power-up state approximately
200 ms after power-up.
Power-On Sequence
The ideal power-up sequence is: GND, Vdd, digital
inputs, RF inputs. The relative order of the digital
inputs are not important as long as they are powered
after Vdd / GND
LE
PUP1
PUP2
Gain Relative to Maximum
Gain
0
0
0
-31.5
0
1
0
-24
0
0
1
-16
0
1
1
Insertion Loss
1
X
X
0 to -31.5 dB
Note: The logic state of D0 - D5 determines the powerup state per truth table shown below when LE is high
at power-up.
Truth Table
Absolute Maximum Ratings
RF Input Power [1]
11.5 dBm (T = 85 °C)
Digital Inputs (LE, SERIN, CLK,
P/S, DO-D5, PUP1, PUP2)
-0.5 to Vdd +0.5V
Controller Bias Voltage (Vdd)
5.6V
Amplifier Bias Voltage (Vcc)
5.5V
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 15.1 mW/°C above 85 °C) [1]
0.98 W
Thermal Resistance
66.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Control Voltage Input
D5
D4
D3
D2
D1
D0
Gain
Relative to
Maximum
Gain
High
High
High
High
High
High
0 dB
High
High
High
High
High
Low
-0.5 dB
High
High
High
High
Low
High
-1 dB
High
High
High
Low
High
High
-2 dB
High
High
Low
High
High
High
-4 dB
High
Low
High
High
High
High
-8 dB
Low
High
High
High
High
High
-16 dB
Low
Low
Low
Low
Low
Low
-31.5 dB
Any combination of the above states will provide a reduction in
gain approximately equal to the sum of the bits selected.
[1] At max gain settling
Control Voltage Table
Bias Voltage
Vdd (V)
Idd (Typ.) (mA)
State
Vdd = +3V
Vdd = +5V
5V
0.12
Low
0 to 0.5V @ <1 µA
0 to 0.8V @ <1 µA
Vs (V)
Is (Typ.) (mA)
High
2 to 3V @ <1 µA
2 to 5V @ <1 µA
5V
86
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
0-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC625HFLP5E
v00.0311
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15 mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05 mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05 mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
HMC625HFLP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL1
[1]
Package Marking [2]
H625HF
XXXX
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Pin Descriptions
Pin Number
Function
Description
1
AMPIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
29
AMPOUT
RF output and DC bias (Vcc) for
the output stage of the amplifier.
2, 3, 13,
28, 30 - 32
GND
These pins and package bottom
must be connected to RF/DC ground.
4, 12
ATTIN,
ATTOUT
These pins are DC coupled and matched to 50 Ohms.
Blocking capacitors are required. Select value based
on lowest frequency of operation.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Variable Gain Amplifiers - Digital - SMT
Outline Drawing
0-6
HMC625HFLP5E
v00.0311
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz
Pin Descriptions
Variable Gain Amplifiers - Digital - SMT
Pin Number
0-7
Function
Description
5-11
N/C
The pins are not connected internally; however, all data shown
herein was measured with these pins connected to RF/DC ground
externally.
14
SEROUT
Serial input data delayed by 6 clock cycles.
15, 16
PUP2, PUP1
18 - 23
D5, D4, D3,
D2, D1, D0
24
P/S
25
CLK
26
SERIN
27
LE
17
Vdd
Interface Schematic
Supply Voltage
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC625HFLP5E
v00.0311
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz
List of Materials for Evaluation PCB 116960 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
18 Pin DC Connector
J4 - J6
DC Pin
C1 - C9
100 pF Capacitor, 0402 Pkg.
C11 - C12
1000 pF Capacitor, 0402 Pkg.
C14
2.2 µF Capacitor, CASE A Pkg.
R1 - R14
100 kOhm Resistor, 0402 Pkg.
R15
1.8 Ohm Resistor, 1206 Pkg.
SW1, SW2
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
Variable Gain Amplifiers - Digital - SMT
Evaluation PCB
SPDT 4 Position DIP Switch
L1
24 nH Inductor, 0603 Pkg.
U1
HMC625HFLP5E Variable Gain Amplifier
PCB [2]
116958 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Arlon 25FR
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
0-8
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