TT OP993 Pin silicon photodiode Datasheet

OP993





OP999
Choice of TO-18 (OP993) or T-1¾ package (OP999)
Small package style ideal for space-limited applications
Linear response vs. irradiance
Fast switching time
Choice of narrow or wide receiving angle
Each OP993 and OP999 device consists of a PIN silicon photodiode molded in a dark blue injection molded shell package
that provides excellent optical and mechanical axis alignment, optical lens surface, control of chip placement and
consistency of the outside package dimensions.
OP993 has a TO-18 package style and a wide receiving angle that provides excellent on-axis coupling. OP999 has a T-1¾
package style and a narrow receiving angle that provides excellent on-axis coupling.
Both devices are 100% production tested for close correlation with OPTEK GaAIAs emitters.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
Ordering Information
 Non-contact reflective object sensor  Machine safety
 Assembly line automation
 End of travel sensor
 Machine automation
 Door sensor
Part
Number
Sensor
Viewing
Angle
Lead
Length
OP993
OP999
Photodiode
Photodiode
118°
18°
0.75 min
OP993
1
OP999
Pin #
Sensor
1
2
Cathode
Anode
2
OP993
OP999
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
1
2
DIMENSIONS ARE IN:
RoHS
[MILLIMETERS]
INCHES
Pin #
Sensor
1
2
Anode
Cathode
CONTAINS POLYSULFONE
To avoid stress cracking, we suggest using
ND Industries’ Vibra-Tite for thread-locking.
Vibra-Tite evaporates fast without causing
structural failure in OPTEK'S molded plastics.
Reverse Breakdown Voltage
60 V
Storage & Operating Temperature Range
-40° C to +100° C
Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron]
260° C(1)
Reverse Breakdown Voltage
60 V
100 mW(2)
Power Dissipation
IL
Reverse Light Current
OP993
OP999
ID
Reverse Dark Current
V(BR)
Reverse Breakdown Voltage
12.5
6.5
-
28.5
15
µA
VR = 5 V, EE = 1.7 mW/cm2 (3)
VR = 5 V, EE = 0.25 mW/cm2 (3)
1
60
nA
VR = 30 V, EE = 0 (4)
V
IR = 100 μA
V
IF = 1 mA
pF
VR = 20 V, EE = 0, f = 1.0 MHz
ns
VR = 20 V, λ = 850 nm, RL = 50 Ω
60
VF
Forward Voltage
1.2
CT
Total Capacitance
4
tr
Rise Time
5
tf
Fall Time
5
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be
applied to leads when soldering.
(2) Derate linearly 1.67 mW/° C above 25° C.
(3) Light source is an unfiltered GaAIAs emitting diode operating at peak emission wavelength of 890 nm and EE(APT) of 1.7 mW/cm2 for OP993
and 0.25mW/cm2 for OP999 average within a 0.25” diameter aperture.
(4) This dimension is held to within ± 0.005” on the flange edge and may vary up to ± 0.020” in the area of the leads.
OP993
OP999
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