Zetex FZT789A Pnp silicon planar medium power high gain transistor Datasheet

FZT789A
1.8
Tamb=25°C
1.0
1.4
1.2
0.6
0.6
V
0.8
0.4
0.01
0.1
1
h
0 0
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.0
500
0.8
0.6
250
h
0.4
0.2
-55°C
+25°C
+100°C
+175°C
1.6
750
1.4
- (Volts)
- Normalised Gain
1.2
0.01
IC - Collector Current (Amps)
VCE=2V
IC/IB=100
1.6
- (Volts)
1.2
V
1.4
0.6
0.1
-25
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-6
A
Continuous Collector Current
IC
-3
A
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
-40
V
-25
-35
V
IC=-10mA*
V(BR)EBO
-5
-8.5
V
IE=-100µ A
-0.1
10
µA
µA
VCB=-15V
VCB=-15V, Tamb=100°C
-0.1
µA
VEB=-4V
0.4
0.01
0.1
1
10
1
0.1
0.4
0.2
0.01
0.1
DC
1s
100ms
10ms
1ms
100µs
1
10
VCE - Collector Emitter Voltage (V)
IC - Collector Current (Amps)
Safe Operating Area
VBE(on) v IC
3 - 247
W
°C
-25
100
IC=-100µ A
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Saturation Voltages
VCE(sat)
-0.15 -0.25 V
-0.30 -0.45 V
-0.30 -0.50 V
IC=-1A, IB=-10mA*
IC=-2A, IB=-20mA*
IC=-3A, IB=-100mA*
VBE(sat)
-0.8
V
IC=-1A, IB=-10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
300
250
200
100
Transition Frequency
fT
100
Input Capacitance
Cibo
225
pF
Output Capacitance
Cobo
25
pF
VCB=-10V, f=1MHz
Switching Times
ton
toff
35
400
ns
ns
IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V
10
10
2
-55 to +150
V(BR)CEO
0.8
VBE(sat) v IC
1
VCBO
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
hFE v IC
0.1
V
Collector-Base Voltage
Collector-Emitter Voltage
V(BR)CBO
IC - Collector Current (Amps)
0.01
UNIT
Breakdown Voltages
0.8
0
VALUE
PARAMETER
1.0
0
SYMBOL
1.0
0
VCE=2V
B
1.2
IC - Collector Current (Amps)
-55°C
+25°C
+100°C
FZT689B
FZT789A
PARAMETER
0.6
10
1
E
C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
0.2
0.01
C
ABSOLUTE MAXIMUM RATINGS.
0.2
0
10
- Typical Gain
1.4
COMPLEMENTARY TYPE PARTMARKING DETAIL -
0.4
+100°C
+25°C
-55°C
1.6
IC/IB=100
1.0
0.8
0.2
0
-55°C
+25°C
+100°C
+175°C
1.6
- (Volts)
1.4
1.2
IC/IB=100
IC/IB=40
IC/IB=10
V
V
- (Volts)
1.6
FZT789A
ISSUE 3 – OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 93mΩ at 3A
* Gain of 200 at IC=2 Amps and very low saturation voltage
APPLICATIONS
* Battery powered circuits, fast charge converters
TYPICAL CHARACTERISTICS
1.8
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
-1.0
800
IC=-10mA, VCE=-2V
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
MHz IC=-50mA, VCE=-5V, f=50MHz
VEB=-0.5V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 246
FZT789A
1.8
Tamb=25°C
1.0
1.4
1.2
0.6
0.6
V
0.8
0.4
0.01
0.1
1
h
0 0
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.0
500
0.8
0.6
250
h
0.4
0.2
-55°C
+25°C
+100°C
+175°C
1.6
750
1.4
- (Volts)
- Normalised Gain
1.2
0.01
IC - Collector Current (Amps)
VCE=2V
IC/IB=100
1.6
- (Volts)
1.2
V
1.4
0.6
0.1
-25
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-6
A
Continuous Collector Current
IC
-3
A
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
-40
V
-25
-35
V
IC=-10mA*
V(BR)EBO
-5
-8.5
V
IE=-100µ A
-0.1
10
µA
µA
VCB=-15V
VCB=-15V, Tamb=100°C
-0.1
µA
VEB=-4V
0.4
0.01
0.1
1
10
1
0.1
0.4
0.2
0.01
0.1
DC
1s
100ms
10ms
1ms
100µs
1
10
VCE - Collector Emitter Voltage (V)
IC - Collector Current (Amps)
Safe Operating Area
VBE(on) v IC
3 - 247
W
°C
-25
100
IC=-100µ A
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Saturation Voltages
VCE(sat)
-0.15 -0.25 V
-0.30 -0.45 V
-0.30 -0.50 V
IC=-1A, IB=-10mA*
IC=-2A, IB=-20mA*
IC=-3A, IB=-100mA*
VBE(sat)
-0.8
V
IC=-1A, IB=-10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
300
250
200
100
Transition Frequency
fT
100
Input Capacitance
Cibo
225
pF
Output Capacitance
Cobo
25
pF
VCB=-10V, f=1MHz
Switching Times
ton
toff
35
400
ns
ns
IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V
10
10
2
-55 to +150
V(BR)CEO
0.8
VBE(sat) v IC
1
VCBO
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
hFE v IC
0.1
V
Collector-Base Voltage
Collector-Emitter Voltage
V(BR)CBO
IC - Collector Current (Amps)
0.01
UNIT
Breakdown Voltages
0.8
0
VALUE
PARAMETER
1.0
0
SYMBOL
1.0
0
VCE=2V
B
1.2
IC - Collector Current (Amps)
-55°C
+25°C
+100°C
FZT689B
FZT789A
PARAMETER
0.6
10
1
E
C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
0.2
0.01
C
ABSOLUTE MAXIMUM RATINGS.
0.2
0
10
- Typical Gain
1.4
COMPLEMENTARY TYPE PARTMARKING DETAIL -
0.4
+100°C
+25°C
-55°C
1.6
IC/IB=100
1.0
0.8
0.2
0
-55°C
+25°C
+100°C
+175°C
1.6
- (Volts)
1.4
1.2
IC/IB=100
IC/IB=40
IC/IB=10
V
V
- (Volts)
1.6
FZT789A
ISSUE 3 – OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 93mΩ at 3A
* Gain of 200 at IC=2 Amps and very low saturation voltage
APPLICATIONS
* Battery powered circuits, fast charge converters
TYPICAL CHARACTERISTICS
1.8
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
-1.0
800
IC=-10mA, VCE=-2V
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
MHz IC=-50mA, VCE=-5V, f=50MHz
VEB=-0.5V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 246
Similar pages