Infineon BCX42 Pnp silicon af and switching transistor Datasheet

BCX42
PNP Silicon AF and Switching Transistor
• For general AF applications
2
3
• High breakdown voltage
1
• Low collector-emitter saturation voltage
• Complementary type: BCX41 (NPN)
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
BCX42
Marking
DKs
Pin Configuration
1=B
2=E
Package
SOT23
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
125
Collector-base voltage
VCBO
125
Emitter-base voltage
VEBO
5
Collector current
IC
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point2)
Symbol
RthJS
Value
800
1
Unit
V
mA
A
mA
TS ≤ 79 °C
-65 ... 150
Value
≤ 215
Unit
K/W
1Pb-containing
2For
package may be available upon special request
calculation of RthJA please refer to Application Note Thermal Resistance
1
2007-04-27
BCX42
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 125
V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
125
-
-
V(BR)EBO
5
-
-
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 100 V, IE = 0
-
-
0.1
VCB = 100 V, IE = 0 , T A = 150 °C
-
-
20
VCE = 100 V, TA = 85 °C
-
-
10
VCE = 100 V, TA = 125 °C
-
-
75
-
-
100
Collector-emitter cutoff current
I CEO
Emitter-base cutoff current
I EBO
nA
VEB = 4 V, IC = 0
DC current gain1)
-
h FE
IC = 100 µA, VCE = 1 V
25
-
-
IC = 100 mA, V CE = 1 V
63
-
-
IC = 200 mA, V CE = 1 V
40
-
-
VCEsat
-
-
0.9
VBEsat
-
-
1.4
fT
-
150
-
MHz
Ccb
-
12
-
pF
Collector-emitter saturation voltage1)
V
IC = 300 mA, IB = 30 mA
Base emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1Pulse
test: t < 300µs; D < 2%
2
2007-04-27
BCX42
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 3
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
BCX 42/BSS 63
EHP00435
3 BCX 42/BSS 63
10
EHP00433
mA
h FE
5
150 ˚C
25 ˚C
-50 ˚C
ΙC
2
10
150 ˚C
25 ˚C
5
-50 ˚C
10 2
1
10
5
5
0
10
5
10 1
10 -1
5 10 0
5 10 1
5 10 2
10 -1
mA 10 3
0
200
400
600 mV 800
ΙC
VCE sat
Base-emitter saturation voltage
Collector current I C = ƒ(V BE)
IC = ƒ(V BEsat), hFE = 10
VCE = 1V
10 3
BCX 42/BSS 63
EHP00432
10 3
mA
BCX 42/BSS 63
EHP00429
mA
ΙC
ΙC
10 2
10 2
5
5
150 ˚C
25 ˚C
-50 ˚C
10 1
10 1
5
10
TA = 150 ˚C
25 ˚C
-50 ˚C
5
0
0
10
5
10 -1
5
0
1
2
V
10 -1
3
VBE sat
0
1
2
V
3
VBE
3
2007-04-27
BCX42
Collector cutoff current ICBO = ƒ(TA)
VCBO = 100 V
BCX 42/BSS 63
10 4
nA
Ι CB0
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
EHP00434
10 3
BCX 42/BSS 63
EHP00431
MHz
max
10 3
fT
5
5
10 2
5
10 2
typ
10 1
5
10
5
0
5
10 -1
0
50
100
˚C
10 1
10 0
150
5 10 1
5
10 2
mA
10 3
ΙC
TA
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
Total power dissipation Ptot = ƒ(TS)
550
90
mW
pF
400
60
Ptot
CCB(CEB )
450
70
350
50
300
40
250
200
CEB
30
BCW66K
BCW66
150
20
100
10
50
CCB
0
0
4
8
12
16
V
0
0
22
VCB(VEB)
4
15
30
45
60
75
90 105 120
°C 150
TS
2007-04-27
BCX42
Total power dissipation Ptot = ƒ(TS)
10 3
BCX 42/BSS 63
Ptot max
5
Ptot DC
EHP00430
D=
tp
T
tp
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
5
2007-04-27
Package SOT23
BCX42
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
6
2007-04-27
BCX42
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
7
2007-04-27
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