Kexin MBD330DWT1 Dual schottky barrier diode Datasheet

Diodes
SMD Type
Dual Schottky Barrier Diodes
MBD110DWT1
MBD330DWT1;MBD770DWT1
SOT-363
1.3
Unit: mm
+0.1
-0.1
0.65
+0.15
2.3-0.15
Extremely Low Minority Carrier Lifetime
+0.1
1.25-0.1
0.525
Features
0.36
Very Low Capacitance
+0.05
0.1-0.02
+0.05
0.95-0.05
+0.1
0.3-0.1
+0.1
2.1-0.1
0.1max
Low Reverse Leakage
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
S ym b o l
V a lu e
VR
30
M B D110DW T1
R e ve rs e V o lta g e
M B D330DW T1
7
M B D770DW T1
F o rw a rd P o w e r D is s ip a tio n
J u n c tio n T e m p e ra tu re
S to ra g e T e m p e ra tu re R a n g e
TA = 25
U n it
V dc
70
PF
120
TJ
-5 5 to + 1 2 5
T stg
-5 5 to + 1 5 0
mA
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1
Diodes
SMD Type
MBD110DWT1
MBD330DWT1;MBD770DWT1
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
VBR(R)
IR = 10 A
CT
VR = 0, f = 1.0 MHz
0.88
1.0
VR = 15 Volts, f = 1.0 MHz
0.9
1.5
MBD770DWT1
VR = 20 Volts, f = 1.0 MHz
0.5
1.0
MBD110DWT1
VR = 3.0 V
0.02
0.25
A
MBD110DWT1
Reverse Breakdown Voltage
MBD330DWT1
Diode Capacitance
MBD110DWT1
MBD770DWT1
MBD330DWT1
Total Capacitance
Reverse Leakage
MBD330DWT1
MBD110DWT1
CT
IR
NF
13
200
nAdc
9
200
nAdc
f = 1.0 GHz
6
0.6
0.45
IF = 10 mA
0.52
0.6
IF = 1.0 mAdc
0.47
0.5
IF = 10 mA
0.7
1.0
MBD110DWT1 MMBD330DWT1 MBD770DWT1
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dB
0.5
Marking
2
pF
VR = 25 V
0.38
H5
pF
VR = 35 V
IF = 10 mA
T4
Unit
Volts
IF = 1.0 mAdc
VF
M4
10
30
MBD330DWT1
MBD770DWT1
Type
7.0
Max
MBD110DWT1
Forward Voltage
Marking
Typ
70
MBD770DWT1
Noise Figure
Min
Vdc
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