DPG 30 C 200PB advanced V RRM = 200 V I FAV = 2x 15 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode 1 Part number 2 3 DPG 30 C 200PB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) TO-220AB ● Industry standard outline ● Epoxy meets UL 94V-0 ● RoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF Conditions forward voltage I FAV average forward current VF0 rF threshold voltage slope resistance min. TVJ = 25 °C thermal resistance junction to case 200 V TVJ = 25 °C 1 µA TVJ = 150 °C 0.08 mA I F = 15 A I F = 30 A TVJ = 25 °C 1.25 V 1.50 V I F = 15 A I F = 30 A TVJ = 150 °C 1.00 1.27 V V rectangular, d = 0.5 T C = 140 °C 15 A T VJ = 175 °C 0.69 17.3 V mΩ 1.70 K/W TVJ Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current t rr reverse recovery time CJ junction capacitance EAS non-repetitive avalanche energy I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz 175 °C = 25 °C -55 90 W t p = 10 ms (50 Hz), sine TVJ = 45 °C 150 A I F = 20 A; TVJ = 25 °C TVJ = 125 °C 3 A A VR = 100 V TVJ = 25 °C TVJ = 125 °C 35 ns ns VR = 100 V; f = 1 MHz TVJ = 25 °C tbd pF I AS = tbd A; L = 100 µH TVJ = 25 °C TC -diF /dt = 200 A/µs * Data according to IEC 60747and per diode unless otherwise specified tbd mJ tbd A 0629 © 2006 IXYS all rights reserved Unit VR = 200 V virtual junction temperature IXYS reserves the right to change limits, conditions and dimensions. max. VR = 200 V for power loss calculation only R thJC typ. DPG 30 C 200PB advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* RthCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit 35 A 0.25 K/W 0.4 0.6 Nm 20 60 N -55 150 °C Weight 2 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220AB M C D B E F N A H G J K L © 2006 IXYS all rights reserved R Millimeter Min. Max. Inches Min. Max. A B 12.70 13.97 14.73 16.00 0.500 0.550 0.580 0.630 C D 9.91 3.54 10.66 4.08 0.390 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.18 0.230 0.270 0.100 0.125 G H 1.15 2.79 1.65 5.84 0.045 0.065 0.110 0.230 J K 0.64 2.54 1.01 BSC 0.025 0.040 0.100 BSC M N 4.32 1.14 4.82 1.39 0.170 0.190 0.045 0.055 Q R 0.35 2.29 0.56 2.79 0.014 0.022 0.090 0.110 * Data according to IEC 60747and per diode unless otherwise specified 0629 IXYS reserves the right to change limits, conditions and dimensions. Q Dim.