Renesas HRV103A Silicon schottky barrier diode for rectifying Datasheet

HRV103A
Silicon Schottky Barrier Diode for Rectifying
REJ03G0398-0100
Rev.1.00
Oct 12, 2004
Features
• Low forward voltage drop and suitable for high efficiency rectifying.
• Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRV103A
S1
TURP
Pin Arrangement
Cathode mark
Mark
1
S1
2
1. Cathode
2. Anode
Rev.1.00 Oct 12, 2004 page 1 of 5
HRV103A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Repetitive peak reverse voltage
Symbol
VRRM
Value
30
Unit
V
Reverse voltage
Average rectified current
VR
2
IO *
30
1
V
A
Non-Repetitive peak forward surge current
Junction temperature
IFSM *
Tj
5
125
A
°C
1
Storage temperature
Tstg
−55 to +125
Notes: 1. 10ms sine wave 1 pulse
2. Ta = 44°C, With Ceramics board (board size: 50mm × 50 mm, Land size 2mm × 2 mm)
Short form wave (θ180°C), VR = 10 V.
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Symbol
VF1
Reverse current
VF2
VF3
IR1
IR2
C
Capacitance
Thermal resistance
Rth(j-a)
Min
Typ
—
—
Max
0.27
Unit
V
—
—
—
—
0.36
0.42
—
—
—
—
100
1000
µA
—
—
—
100
40
—
pF
°C/W
—
200
Test Condition
IF = 100 mA
IF = 700 mA
IF = 1 A,
VR = 5 V
VR = 30 V
VR = 10 V, f = 1 MHz
1
Ceramics board *
2
Glass epoxy board *
Notes: 1. Ceramics board
2.0
50h×50w×0.8t
0.5
2.0
0.3
2.0
Unit: mm
1.0
2. Glass epoxy board
6.0
50h×50w×0.8t
0.5
6.0
0.3
2.0
Unit: mm
1.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
Rev.1.00 Oct 12, 2004 page 2 of 5
HRV103A
Main Characteristics
10–1
1.0
Ta = 75°C
Pulse test
Ta = 25°C
10–2
Reverse current IR (A)
Forward current IF (A)
10–1
Pulse test
10–2
10–3
10–4
0
0.2
0.4
0.6
0.8
1.0
Ta = 25°C
10–4
10–6
0
10
20
30
40
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
f=1MHz
Pulse test
100
Capacitance C (pF)
10–3
10–5
10–5
10–6
Ta = 75°C
10
1.0
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00 Oct 12, 2004 page 3 of 5
HRV103A
8
0.8
0.7
0A
D=1/6
t
T
0.6
t
D=—
T
Tj = 25°C
Reverse power dissipation Pd (W)
Forward power dissipation Pd (W)
0V
sin(θ=180°)
D=1/3
0.5
D=1/2
0.4
DC
0.3
0.2
0.1
0
0
0.5
1.0
1.5
Forward current IF (A)
Average rectified current IO (A)
1.0
VR=VRRM/3
Tj =125°C
Rth(j−a)=100°C/W
DC
0.8
D=1/2
sin(θ=180°)
0.6
D=1/3
D=1/6
0.4
0.2
0
−25
0
25
50
75
100
125
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
Rev.1.00 Oct 12, 2004 page 4 of 5
6
t
T
t
D=—
T
Tj = 125°C
D=1/3
5
D=1/2
4
sin(θ=180°)
3
2
1
0
0
10
20
30
40
Reverse voltage VR (V)
Fig.4 Forward power dissipation vs. Forward current
1.2
D=5/6
7
Fig.5 Reverse power dissipation vs. Reverse voltage
HRV103A
Package Dimensions
0.20
1.25 +– 0.10
0.60 ± 0.05
2.50 ± 0.10
0.55 Max
1.90 ± 0.1
0.13 ± 0.05
0.80 ± 0.05
Unit: mm
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00 Oct 12, 2004 page 5 of 5
TURP
—
—
0.004 g
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