ON MMBT6427LT1G Darlington transistor npn silicon Datasheet

MMBT6427LT1
Preferred Device
Darlington Transistor
NPN Silicon
Features
• Pb−Free Package is Available
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MAXIMUM RATINGS
Rating
COLLECTOR 3
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VCBO
40
Vdc
Emitter −Base Voltage
VEBO
12
Vdc
IC
500
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
Collector Current − Continuous
BASE
1
EMITTER 2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
1
PD
Thermal Resistance, Junction−to−Ambient
RqJA
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
3
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1V M G
G
1
1V = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBT6427LT1
SOT−23
3,000 / Tape & Reel
MMBT6427LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
Publication Order Number:
MMBT6427LT1/D
MMBT6427LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
−
40
−
12
−
−
1.0
−
50
−
50
10,000
20,000
14,000
100,000
200,000
140,000
−
−
1.2
1.5
−
2.0
−
1.75
−
7.0
−
15
1.3
−
−
10
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IC = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
mAdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc)
VCE(sat)(3)
Base −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VBE(sat)
Base −Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
|hfe|
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
NF
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
pF
pF
Vdc
dB
MMBT6427LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
200
BANDWIDTH = 1.0 Hz
i n, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
500
100
10 mA
50
100 mA
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 mA
0.1
0.07
0.05
10 mA
0.03
5.0
10 20
50 100 200
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
0.02
10 20
50k 100k
50 100 200
50k 100k
Figure 3. Noise Current
14
200
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 2. Noise Voltage
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
IC = 10 mA
70
50
100 mA
30
20
1.0 mA
10
1.0
2.0
10
10 mA
8.0
100 mA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
500
1000
0
1.0
Figure 4. Total Wideband Noise Voltage
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
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3
500
1000
MMBT6427LT1
SMALL−SIGNAL CHARACTERISTICS
4.0
|h fe |, SMALL−SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
20
TJ = 25°C
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
VR, REVERSE VOLTAGE (VOLTS)
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200k
hFE , DC CURRENT GAIN
TJ = 125°C
25°C
30k
20k
10k
7.0k
5.0k
−55 °C
VCE = 5.0 V
3.0k
2.0k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
VCE(sat) @ IC/IB = 1000
5.0 7.0
10
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
500
TJ = 25°C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (mA)
500 1000
Figure 9. Collector Saturation Region
1.6
0.6
2.0
3.0
Figure 8. DC Current Gain
0.8
1.0
Figure 7. High Frequency Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
100k
70k
50k
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
500
−1.0
−2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
25°C TO 125°C
*RqVC FOR VCE(sat)
−55 °C TO 25°C
−3.0
25°C TO 125°C
−4.0
qVB FOR VBE
−5.0
−55 °C TO 25°C
−6.0
5.0 7.0 10
Figure 10. “On” Voltages
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
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4
500
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MMBT6427LT1
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
ZqJC(t) = r(t) • RqJCTJ(pk) − TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJATJ(pk) − TA = P(pk) ZqJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
Figure 12. Thermal Response
FIGURE A
tP
PP
PP
t1
1/f
t
DUTYCYCLE + t1f + 1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
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5
1.0k
2.0k
5.0k 10k
MMBT6427LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT6427LT1/D
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