MOTOROLA MAC16 Triacs 15 amperes rms 400 thru 800 volt Datasheet

SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
TRIACS
15 AMPERES RMS
400 thru 800
VOLTS
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 15 Amperes RMS at 80°C
MT2
• Uniform Gate Trigger Currents in Three Modes
• High Immunity to dv/dt — 500 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating di/dt — 9.0 A/ms minimum at 125°C
MT1
MT2
G
CASE 221A-06
(TO-220AB)
Style 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
VDRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
TJ
Tstg
Parameter
Peak Repetitive Off-State Voltage, (1)
(– 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
Value
Unit
Volts
MAC16D
MAC16M
MAC16N
400
600
800
On-State RMS Current
(60 Hz, TC = 80°C)
15
A
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
150
A
Circuit Fusing Consideration (t = 8.3 ms)
93
A2sec
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
20
Watts
Average Gate Power (t = 8.3 ms, TC = 80°C)
0.5
Watts
Operating Junction Temperature Range
– 40 to +125
°C
Storage Temperature Range
– 40 to +150
°C
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
2.0
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
260
°C
THERMAL CHARACTERISTICS
RθJC
RθJA
TL
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
3–67
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Min
Typ
Max
—
—
—
—
0.01
2.0
Peak On-State Voltage*
(ITM = ± 21 A Peak)
—
1.2
1.6
Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
10
10
10
16
18
22
50
50
50
Hold Current
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
—
20
50
Latch Current (VD = 24 V, IG = 50 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
—
—
—
33
36
33
50
80
50
Gate Trigger Voltage (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
0.5
0.5
0.5
0.75
0.72
0.82
1.5
1.5
1.5
9.0
—
—
A/ms
500
—
—
V/µs
Symbol
Unit
OFF CHARACTERISTICS
IDRM
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
mA
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
VTM
IGT
IH
IL
VGT
Volts
mA
mA
mA
Volts
DYNAMIC CHARACTERISTICS
(di/dt)c
dv/dt
Rate of Change of Commutating Current* See Figure 10.
(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs,
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)
CL = 10 µF
LL = 40 mH
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
125
20
120
18
115
α = 30 and 60°
110
α = 90°
105
α = 180°
100
95
α = 120°
DC
90
85
80
PAV, AVERAGE POWER (WATTS)
TC, CASE TEMPERATURE (°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
DC
180°
120°
16
90°
14
60°
12
10
α = 30°
8
6
4
2
0
2
4
6
8
10
12
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 1. RMS Current Derating
3–68
14
16
0
0
2
4
6
8
10
12
IT(RMS), ON-STATE CURRENT (AMP)
14
16
Figure 2. On-State Power Dissipation
Motorola Thyristor Device Data
1
MAXIMUM @ TJ = 125°C
10
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1 · 104
1000
Figure 4. Thermal Response
MAXIMUM @ TJ = 25°C
40
1
I H, HOLD CURRENT (mA)
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
TYPICAL AT
TJ = 25°C
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
100
0.1
0
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
MT2 POSITIVE
MT2 NEGATIVE
5
– 40
4
Figure 3. On-State Characteristics
110 125
1
Q2
Q3
Q1
OFF-STATE VOLTAGE = 12 V
RL = 140 Ω
– 10
20
50
80
TJ, JUNCTION TEMPERATURE (°C)
110
Figure 6. Gate Trigger Current Variation
Motorola Thyristor Device Data
OFF-STATE VOLTAGE = 12 V
RL = 140 Ω
VGT, GATE TRIGGER VOLTAGE (VOLT)
IGT, GATE TRIGGER CURRENT (mA)
20
50
80
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Hold Current Variation
100
1
– 40
– 10
125
Q1
Q3
Q2
0.5
– 40
– 10
+20
50
80
TJ, JUNCTION TEMPERATURE (°C)
110
125
Figure 7. Gate Trigger Voltage Variation
3–69
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE
(V/µ s)
100
5000
(dv/dt) c , CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/µ s)
VD = 800 Vpk
TJ = 125°C
4K
3K
2K
1K
0
10
100
1000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
TJ = 125°C
tw
VDRM
10
f=
1
2 tw
6f I
(di/dt)c = TM
1000
20
30
40
50
60
70
80
90
100
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
Figure 9. Critical Rate of Rise of
Commutating Voltage
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
1N4007
MEASURE
I
TRIGGER
CHARGE
CONTROL
NON-POLAR
CL
TRIGGER CONTROL
CHARGE
75°C
ITM
1
10000
100°C
10
–
+
400 V
2
1N914 51
G
1
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
3–70
Motorola Thyristor Device Data
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