NTE NTE2569 Silicon complementary transistors high current switch Datasheet

NTE2568 (NPN) & NTE2569 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Saturation Voltage
D Fast Switching Speed
D Isolated TO220 Type Package
Applications:
D Car–Use Inductance Drivers, Lamp Drivers
D Inverter Drivers, Converters (Strobes, Flashes, FLT Lighting Circuits)
D Power Amplifiers (High–Power Car Stereos, Motor Control)
D High–Speed Switching (Switching Regulators, Drivers)
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
0.1
mA
0.1
mA
Collector Cutoff Current
ICBO
VCB = 40V, IE = 0
–
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
–
DC Current Gain
hFE
VCE = 2V, IC = 1A
70
–
280
fT
VCE = 5V, IC = 1A
–
100
–
MHz
VCE(sat)
IC = 5A, IB = 0.25A
–
–
0.4
V
Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
80
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
60
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
5
–
–
V
–
0.1
–
µs
–
0.5
–
µs
–
0.1
–
µs
Turn–On Time
ton
Storage Time
tstg
Collector Current Fall Time
tf
IC = 5A, IB1 = 20A,
IB2 = –20A, VCC = 20V,
Pulse Width = 20µs,
Duty Cycle ≤ 1%
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated
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