Microsemi APTM120U10DAG Single switch with series diodes mosfet power module Datasheet

APTM120U10DAG
Single switch
with Series diodes
MOSFET Power Module
VDSS = 1200V
RDSon = 100mΩ typ @ Tj = 25°C
ID = 116A @ Tc = 25°C
Application
• Zero Current Switching resonant mode
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
S
D
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
SK
G
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
116
86
464
±30
120
3290
24
50
3200
Unit
V
A
V
mΩ
W
A
June, 2008
ID
Parameter
Drain - Source Breakdown Voltage
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTM120U100DAG Rev 2
Symbol
VDSS
APTM120U10DAG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS = 1200V
Tj = 25°C
VGS = 0V,VDS = 1000V
Tj = 125°C
VGS = 10V, ID = 58A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
Typ
100
3
Max
1
3
120
5
±400
Unit
Max
Unit
mA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 116A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
28.9
4.4
0.8
nF
1100
nC
128
716
20
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 116A
RG =1.2Ω
17
ns
245
62
5
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
mJ
4.6
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
9.2
mJ
5.6
Series diode ratings and characteristics
IF
VF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
1200
Tj = 25°C
Tj = 125°C
IF = 180A
VR = 800V
di/dt = 800A/µs
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Max
1500
2500
Tj = 125°C
180
2
2.3
1.8
Tj = 25°C
370
Tj = 125°C
500
Tj = 25°C
3.9
Tj = 125°C
20.7
Tc = 70°C
IF = 180A
IF = 360A
IF = 180A
Typ
Unit
V
µA
A
2.5
V
ns
June, 2008
IRM
Test Conditions
µC
2–6
APTM120U100DAG Rev 2
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
APTM120U10DAG
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.038
0.22
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3–6
APTM120U100DAG Rev 2
June, 2008
SP6 Package outline (dimensions in mm)
APTM120U10DAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.04
0.035
0.9
0.03
0.7
0.025
0.02
0.5
0.015
0.3
0.01
Single Pulse
0.1
0.05
0.005
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
320
VGS=15, 10V
240
200
6V
160
5.5V
120
80
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
280
7V
ID, Drain Current (A)
5V
40
240
200
160
TJ=-55°C
120
80
TJ=25°C
40
4.5V
0
0
5
10
15
20
25
TJ=125°C
0
30
0
1.2
VGS=10V
1.1
VGS=20V
1
3
4
5
6
7
120
Normalized to
VGS=10V @ 58A
1.3
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
0.9
0.8
100
80
60
40
20
0
0
40
80
120
160
200
240
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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June, 2008
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
4–6
APTM120U100DAG Rev 2
ID, Drain Current (A)
280
APTM120U10DAG
RDS(on), Drain to Source ON resistance
(Normalized)
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=58A
2.0
1.5
1.0
0.5
0.0
-50 -25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by RDSon
100
1ms
10
0.6
10ms
Single pulse
TJ=150°C
TC=25°C
1
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
Crss
1000
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=116A
TJ=25°C
12
10
VDS=240V
VDS=600V
8
VDS=960V
6
4
2
0
0
300
600
900
1200
1500
Gate Charge (nC)
June, 2008
0
1200
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
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5–6
APTM120U100DAG Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
APTM120U10DAG
Delay Times vs Current
Rise and Fall times vs Current
100
td(off)
250
200
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
150
100
50
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
80
tr and tf (ns)
td(on) and td(off) (ns)
300
60
tr
40
20
td(on)
0
0
30
60
90
120
150
180
30
ID, Drain Current (A)
90
120
150
ID, Drain Current (A)
180
24
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
12
Switching Energy (mJ)
Switching Energy (mJ)
60
Switching Energy vs Gate Resistance
Switching Energy vs Current
16
Eon
Eoff
8
4
0
VDS=800V
ID=116A
TJ=125°C
L=100µH
20
16
Eoff
12
Eon
8
Eoff
4
30
60
90
120
150
180
0
ID, Drain Current (A)
2
4
6
8
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
150
ZCS
125
Hard
switching
100
IDR, Reverse Drain Current (A)
175
Frequency (kHz)
tf
VDS=800V
D=50%
RG=1.2Ω
TJ=125°C
TC=75°C
75
50
25
0
50
70
90
ID, Drain Current (A)
110
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM120U100DAG Rev 2
June, 2008
30
100
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