ON BC490 High current transistor Datasheet

BC490
High Current Transistors
PNP Silicon
Features
• This is a Pb−Free Device*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
−80
Vdc
Collector − Base Voltage
VCBO
−80
Vdc
Emitter − Base Voltage
VEBO
−4.0
Vdc
Collector Current − Continuous
IC
−1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
THERMAL CHARACTERISTICS
12
3
STRAIGHT LEAD
BULK PACK
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
BC
490
AYWW G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
Device
Package
Shipping
BC490G
TO−92
(Pb−Free)
5000 Units / Bulk
Publication Order Number:
BC490/D
BC490
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−80
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−80
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−4.0
−
−
Vdc
ICBO
−
−
−100
nAdc
40
60
15
−
−
−
−
400
−
−
−
−0.25
−0.5
−0.5
−
−
−
−0.9
−1.0
−1.2
−
fT
−
150
−
MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
9.0
−
pF
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
−
110
−
pF
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −2.0 Vdc)
(IC = −100 mAdc, VCE = −2.0 Vdc)
(IC = −1.0 Adc, VCE = −5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
VBE(sat)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
TURN−ON TIME
100
+10 V
0
tr = 3.0 ns
RB
Vin
5.0 mF
+VBB
VCC
+40 V
−1.0 V
5.0 ms
TURN−OFF TIME
100
VCC
+40 V
100
RL
OUTPUT
RB
Vin
5.0 mF
*CS < 6.0 pF
5.0 ms
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://onsemi.com
2
100
RL
OUTPUT
*CS < 6.0 pF
200
100
VCE = −2.0 V
TJ = 25°C
70
TJ = 25°C
Cibo
50
C, CAPACITANCE (pF)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
BC490
100
70
50
30
20
10
Cobo
30
7.0
20
−2.0 −3.0
−5.0 −7.0 −10
−20 −30 −50 −70 −100
IC, COLLECTOR CURRENT (mA)
5.0
−0.1
−200
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current−Gain — Bandwidth Product
−50 −100
Figure 3. Capacitance
1.0 k
700
500
ts
300
t, TIME (ns)
200
100
70
50
td @ VBE(off) = −0.5 V
tf
VCC = −40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
30
20
tr
10
−5.0 −7.0 −10 −20 −30
−50 −70 −100
−200 −300
IC, COLLECTOR CURRENT (mA)
−500
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 4. Switching Time
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P(pk)
t1
0.02
0.1
0.07
0.05
SINGLE PULSE
0.03
SINGLE PULSE
ZqJC(t) = r(t) • RqJC
ZqJA(t) = r(t) • RqJA
0.02
0.01
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−469)
TJ(pk) − TC = P(pk) ZqJC(t)
TJ(pk) − TA = P(pk) ZqJA(t)
0.01
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
500
1.0k
Figure 5. Thermal Response
http://onsemi.com
3
2.0k
5.0k
10k
20k
50k
100
BC490
−1.0 k
−700
1.0
100 ms
TJ = 25°C
0.8
−300
1.0 s
−200
1.0 ms
TC = 25°C
TA = 25°C
−100
−70
−50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−30
−20
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
−500
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
BC490
−2.0 −3.0 −5.0 −7.0 −10
−20 −30 −50 −70 −100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
−10
−1.0
VBE(on) @ VCE = 1.0 V
0
0.5
1.0
2.0
1.0
500
200
500
−0.8
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
200
Figure 7. “On” Voltages
Figure 6. Active Region, Safe Operating Area
TJ = 25°C
0.8
0.6
5.0
10
50
100
20
IC, COLLECTOR CURRENT (mA)
−1.2
50
mA
IC = 10 mA
100 mA
250 mA
500 mA
−1.6
0.4
−2.0
−2.4
0.2
0
0.05
RqVB for VBE
0.1
0.2
1.0 2.0
10
0.5
5.0
IC, COLLECTOR CURRENT (mA)
20
−2.8
0.5
50
1.0
2.0
10
100
5.0
20
50
IC, COLLECTOR CURRENT (mA)
Figure 9. Base−Emitter Temperature Coefficient
Figure 8. Collector Saturation Region
400
hFE , DC CURRENT GAIN
TJ = 125°C
VCE = −1.0 V
200
25°C
−55°C
100
80
60
40
−0.5
−0.7
−1.0
−2.0
−3.0
−5.0
−7.0
−10
−20
−30
IC, COLLECTOR CURRENT (mA)
Figure 10. DC Current Gain
http://onsemi.com
4
−50
−70
−100
−200
−300
−500
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
BC490
−1.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
−0.6
VBE(on) @ VCE = −1.0 V
−0.4
−0.2
VCE(sat) @ IC/IB = 10
0
−0.5 −1.0
−2.0
−5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
−500
TJ = 25°C
−0.8
−0.6
IC = −10 mA
−50
mA
0
−0.05 −0.1
−0.2
−0.5 −1.0 −2.0
−5.0
IB, BASE CURRENT (mA)
−1.6
RqVB for VBE
−2.4
−1.0
−2.0
−500 mA
−10
−20
Figure 12. Collector Saturation Region
−1.2
−2.8
−0.5
−250 mA
−0.2
−0.8
−2.0
−100 mA
−0.4
Figure 11. “On” Voltages
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
V, VOLTAGE (VOLTS)
−0.8
−1.0
−5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
−500
Figure 13. Base−Emitter Temperature Coefficient
http://onsemi.com
5
−50
BC490
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BC490/D
Similar pages